261 results on '"Ueda, Tetsuzo"'
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2. Prospects of mist CVD for fabrication of β-Ga2O3 MESFETs on β-Ga2O3 (010) substrates
3. Gate Injection Transistors: E-mode Operation and Conductivity Modulation
4. Reliability of Diode-Integrated SiC Power MOSFET(DioMOS)
5. Gate Injection Transistors: E-mode Operation and Conductivity Modulation
6. Crystalline SiN x Ultrathin Films Grown on AlGaN/GaN Using In Situ Metalorganic Chemical Vapor Deposition
7. Maskless Lateral Epitaxial Growth of Gallium Nitride Using Dimethylhydrazine as a Nitrogen Precursor
8. Gate injection transistor (GIT) - a normally-off AlGaN/GaN power transistor using conductivity modulation
9. Polarization control of vertical-cavity surface-emitting lasers by utilizing surface plasmon resonance
10. 12.5-Gbps operation of 850-nm vertical-cavity surface-emitting lasers with reduced parasitic capacitance by BCB planarization technique
11. Recessed-gate AlGaN/GaN HFETs with lattice-matched in AlGaN quaternary alloy capping layers
12. AlGaN/GaN power HFET on silicon substrate with source-via grounding (SVG) structure
13. GaN TRANSISTORS FOR POWER SWITCHING AND MILLIMETER-WAVE APPLICATIONS
14. Calculation of Unstable Mixing Region in Wurtzite InGaN
15. Characteristics of Isolated DC–DC Converter With Class Phi-2 Inverter Under Various Load Conditions
16. Growth of thick gan films on rf sputtered ain buffer layer by hydride vapor phase epitaxy
17. Laser lift-off of very thin AlGaN film from sapphire using selective decomposition of GaN interlayer
18. GaN power devices: current status and future challenges
19. Influence of Donor-Type Hole Traps Under P-GaN Gate in GaN-Based Gate Injection Transistor (GIT)
20. Effects of post-deposition annealing in O2 on threshold voltage of Al2O3/AlGaN/GaN MOS heterojunction field-effect transistors
21. Development of GaN Power Devices for High Switching Frequency
22. Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs
23. Investigation of Peak Voltage Suppression Method at Startup in Isolated DC-DC Converter with Class Phi-2 Inverter
24. 1.7 kV / 1.0 m Omega cm(2) Normally-off Vertical GaN Transistor on GaN substrate with Regrown p-GaN/AlGaN/GaN Semipolar Gate Structure
25. Physical and electrical characterizations of AlGaN/GaN MOS gate stacks with AlGaN surface oxidation treatment
26. Drain current enhancement induced by hole injection from gate of 600-V-class normally off gate injection transistor under high temperature conditions up to 200 °C
27. SiO2/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors
28. Implementation of atomic layer deposition-based AlON gate dielectrics in AlGaN/GaN MOS structure and its physical and electrical properties
29. A Study on Load Fluctuation of Isolated DC-DC Converter with Class Phi-2 Inverter using GaN-HFET
30. Reduction of RonA retaining high threshold voltage in SiC DioMOS by improved channel design
31. High power 3-phase to 3-phase matrix converter using dual-gate GaN bidirectional switches
32. Lifetime evaluation for Hybrid-Drain-embedded Gate Injection Transistor (HD-GIT) under practical switching operations
33. Vertical GaN-based power devices on bulk GaN substrates for future power switching systems
34. Nonpolar (11-20) plane AlGaN/GaN heterojunction field effect transistors on (1-102) plane sapphire.
35. Improved hysteresis in a normally-off AlGaN/GaN MOS heterojunction field-effect transistor with a recessed gate structure formed by selective regrowth
36. Design and control of interface reaction between Al-based dielectrics and AlGaN layer in AlGaN/GaN metal-oxide-semiconductor structures
37. Reliability of hybrid-drain-embedded gate injection transistor
38. Fundamental Investigation of Isolated DC-DC Converter with Class-Φ2 Inverter
39. GaN-on-Si Power Technology: Devices and Applications
40. Recovery current characteristics of diode mode operation in GaN gate injection transistor bi‐directional switch
41. Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient
42. High-speed switching and current-collapse-free operation by GaN gate injection transistors with thick GaN buffer on bulk GaN substrates
43. GaN-based semiconductor devices for future power switching systems
44. 1.7 kV/1.0 mΩcm2normally-off vertical GaN transistor on GaN substrate with regrown p-GaN/AlGaN/GaN semipolar gate structure
45. Synchrotron radiation X-ray photoelectron spectroscopy of Ti/Al ohmic contacts to n-type GaN: Key role of Al capping layers in interface scavenging reactions
46. Effect of nitrogen incorporation into Al-based gate insulators in AlON/AlGaN/GaN metal–oxide–semiconductor structures
47. A fully integrated GaN-based power IC including gate drivers for high-efficiency DC-DC Converters
48. Development of GaN-Based Gate-Injection Transistors and its Power Switching Application
49. Effects of hole traps on the temperature dependence of current collapse in a normally-OFF gate-injection transistor
50. High accuracy equivalent circuit model for GaN GIT bi-directional switch
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