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Chaff is a passive jammer widely used to disrupt radar or radio-frequency sensors. A mass of chaff fibers dispersed in the air is commonly referred to as a chaff cloud. It is nearly impossible to numerically simulate in real-time the enormous amount of chaff fibers composing the chaff cloud. In this paper, we model the behavior of numerically estimated chaff clouds as probability density functions (PDFs) and apply approximation techniques to estimate the radar cross-section (RCS) of the chaff cloud in real time. To model the aerodynamics of the chaff cloud, we represented the combination of PDFs as functions of time and wind speed. The applied approximation techniques—vector radiative transfer and generalized equivalent conductor method—showed a computation time that cannot be achieved by low-frequency methods such as the method of moments or finite-difference time-domain. Moreover, the dynamic RCS results of the approximation techniques showed a similar trend to those of other studies simulating similar situations. The proposed scheme is effective for real-time chaff cloud simulation, and the modeled dynamics and estimated dynamic RCSs can be a standard baseline for developing new analysis methods for chaff clouds. In the future, the proposed scheme will extend to more chaff fibers and more diverse environmental parameters.

Device instabilities of graphene metal-oxide-semiconductor field effect transistors such as hysteresis and Dirac point shifts have been attributed to charge trapping in the underlying substrate, especially in SiO2. In this letter, trapping time constants around 87 μs and 1.76 ms were identified using a short pulse current-voltage method. The values of two trapping time constants with reversible trapping behavior indicate that the hysteretic behaviors of graphene field effect transistors are due to neither charge trapping in the bulk SiO2 or tunneling into other interfacial materials. Also, it is concluded that the dc measurement method significantly underestimated the performance of graphene devices. [ABSTRACT FROM AUTHOR]