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3. High-speed switching and current-collapse-free operation by GaN gate injection transistors with thick GaN buffer on bulk GaN substrates

4. GaN-based semiconductor devices for future power switching systems

7. Suppression of current collapse by hole injection from drain in a normally-off GaN-based hybrid-drain-embedded gate injection transistor

8. GaN-based Gate Injection Transistors for power switching applications

15. LPE Growth of Bulk GaN Crystal by Alkali-Metal Flux Method

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