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To present a case of a woman diagnosed with intravenous leiomyomatosis of the uterus.Case report.Department of ObstetricsGynaecology, Středomoravská nemocniční a.s., Přerov Hospital.A 39-year old woman was referred to our unit with uterine fibroids, dysfunctional uterine bleeding and anaemia. Abdominal hysterectomy was performed. The histopathological analysis diagnosed the presence of intravenous leiomyomatosis. After a thorough literature review, we decided to perform an adnexectomy. It was not possible to perform this laparoscopically due to adhesions from previous operation. A conversion to open surgery was necessary.Intravenous leiomyomatosis is a rare clinical condition characterised by the ability of the leiomyoma to spread outside the uterus via the venous system. The diagnosis is difficult to obtain and can only be made after histopathological examination. There are no universal treatment guidelines in place at present.

The main features of the pulse transient method are presented. The method gives the specific heat c and thermal diffusivity a for a single measurement, while thermal conductivity λ is calculated according to λ=caρ, where ρ is the density. The pulse transient method is a dynamic method based on the measurement of the temperature response to a heat pulse produced within a specimen. An apparatus operating in the temperature range from −40 to 100°C is described. Errors are discussed. The thermophysical properties of a CsPbCl3 single crystal are determined using the pulse transient method for a temperature range between 10 and 65°C in the controlled heating and cooling regimes. The data show anomalies in the thermophysical properties around the phase transition temperature at 47°C. Discrepancies in comparison with previously published data are discussed.

Optical transmittance and reflectance measurements have been carried out on semiconducting β-iron disilicide layers formed by annealing of iron films evaporated onto silicon substrates and capped with amorphous silicon or SiOx thin overlayers. The dependence of the absorption coefficient on the energy of photons favours direct allowed transitions with the forbidden energy gap of 0.87 ± 0.04 eV.

Amorphous bilayers with layers of FeNiB and CoFeCrSiB have been prepared by planar flow casting from a single crucible with two nozzles close to each other and with a partition between them forming two separate vessels. Such an arrangement has allowed us to obtain ribbons with two homogeneous layers, one on top of the other, along the whole ribbon length with high quality surface and with contact interlayer having submicron thickness. The character of the interlayer has been investigated by SEM, EMA, CS-TEM, AES and resistometry in the as-quenched state and after annealing below and after crystallization. From the results it seems evident that the process of connection of the two layers takes place below the crystallization temperature by mutual interdiffusion of component atoms, thus giving rise to mechanically solid connection.

The diffusion of the Au atoms in NiSiB and FeCoB metallic glasses is studied by Rutherford backscattering spectrometry (RBS) and Auger electron spectroscopy (AES). The temperature dependence of the Au diffusion coefficients obeys an Arrhenius relation for both compositions with parameters D0 = (10−7.82±2.22) m2 s−1 ΔE = (1.37 ± 0.18) eV for the NiSiB and D0 = (10−8.06±2.64) m2 s−1 ΔE = (1.60 ± 0.22) eV for the FeCoB metallic glass. The possible mechanisms of the atomic transport are discussed. Die Diffusion von Au-Atomen in den metallischen NiSiB- und FeCoB-Glasern mit AES und RBS untersucht. Die Temperaturabhangigkeit des Diffusionskoeffizienten von Gold erfullt eine Arrheniusgleichung fur die beiden Zusammensetzungen mit den Parametern D0 = (10−7,82±2,22) m2 s−1, ΔE = (1,37 ± 0,18) eV fur NiSiB und D0 = (10−8,06 ± 2,64) m2 s−1, ΔE = (1,60 ± 0,22) eV fur FeCoB. Die moglichen Mechanismen des Atomtransports werden disdutiert.

We report a study of the formation of tungsten silicide at the W-Si interface, induced by multipulse (up to 300 shots) XeCl excimer-laser irradiation of W(150 nm)/Si and W(500 nm)/Si samples. Laser fluences ranging from 0.6 to 1.8 J/cm2 were used. After laser treatment the samples were examined by different diagnostic techniques: Rutherford backscattering spectrometry, X-ray scattering, resistometry, and surface profilometry. Numerical computations of the evolution and depth profiles of the temperature in the samples as a consequence of a single 30 ns laser pulse were performed as well. The results indicate that it is possible to obtain a tungsten silicide layer at the W-Si interface at quite low fluences. The layer thickness increases with the number of laser pulses. Complete reaction of the 150 nm thick W film with silicon was obtained at the fluence of 1.2 J/cm2 between 30 and 100 laser pulses and at 1.5 J/cm2 after 30 laser pulses. The sheet resistance of these silicides was 5–10 Ω. At the used fluences for the 500 nm thick W film only the onset of silicide synthesis at the W-Si interface was observed.

The diffusion ot Ti atoms in the Ni77Si3B20 metallic glass was studied by the Auger electron spectroscopy. The temperature dependence of the diffusion coefficient obeys the Arrhenius relation with the activation energyE=1·7 eV and the pre-exponential factorD 0=0·86 × ×10−4 m2 s−1. Possible mechanisms of the atomic transport in metallic glasses are discussed