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1. Thickness dependence of the resistivity of Platinum group metal thin films

10. High Mobility Channel Materials and Novel Devices for Scaling of Nanoeelectronics beyond the Si Roadmap

12. Nanosession: Ferroelectrics - New and Unusal Material Systems

13. Estimation of fixed charge densities in hafnium-silicate gate dielectrics

14. Ni fully GermanoSilicide for gate electrode application in pMOSFETs with HfSiON gate dielectrics

15. Pulsed chemical vapor deposition of conformal GeSe for application as an OTS selector

16. Development of 300mm MOCVD HfSiOx Process

17. Key Issues for the Development of a Ge CMOS Device in an Advanced IC Circuit

18. Alternative Gate Dielectric Materials

19. Threshold Voltage Control in PMOSFETs with Polysilicon or Fully-Silicided Gates on Hf-Based Gate Dielectric Using Controlled Lateral Oxidation

21. Scaling Down of MOCVD HfSiON to 1nm EOT

22. Development of ALD HfZrOx with TDEAH, TDEAZ and H2O

23. Atomic-Layer Deposition of Lutetium Aluminate Thin Films for Non-Volatile Memory Applications

24. Synthesis, self-assembly, and nonlinear optical properties of conjugated helical metal phthalocyanine derivatives

25. Surface Preparation Techniques for High-k Deposition on Ge Substrates

32. Influence of carbon content on the copper-telluride phase formation and on the resistive switching behavior of carbon alloyed Cu-Te conductive bridge random access memory cells.

36. Sub-100 nm2 Cobalt Interconnects

39. Atomic Layer Deposition of Ruthenium Thin Films from (Ethylbenzyl) (1-Ethyl-1,4-cyclohexadienyl) Ru: Process Characteristics, Surface Chemistry, and Film Properties

41. Exploration of a low-temperature PEALD technology to trim and smooth 193i photoresist

42. Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S

44. Sacrificial Self-Assembled Monolayers for the Passivation of GaAs (100) Surfaces and Interfaces

45. Influence of the Reference Layer Composition on the Back-End-of-Line Compatibility of Co/Ni-Based Perpendicular Magnetic Tunnel Junction Stacks

49. Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides

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