137 results on '"Van Hove, Marleen"'
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2. Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate
3. Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics
4. Power electronics with wide bandgap materials: Toward greener, more efficient technologies
5. On a more accurate assessment of scaled copper/low-k interconnects performance
6. Detection of Copper and Water in Low-k Dielectrics by Triangular Voltage Sweep Measurements
7. A New Ultra-Low K ILD Material Based On Organic-Inorganic Hybrid Resins
8. 200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration
9. Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs
10. Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration
11. Investigation on Carrier Transport Through AlN Nucleation Layer From Differently Doped Si(111) Substrates
12. The 2018 GaN power electronics roadmap
13. Impact of crystal orientation on ohmic contact resistance of enhancement-mode p-GaN gate high electron mobility transistors on 200 mm silicon substrates
14. Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs
15. 200 V Enhancement-Mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI With Trench Isolation for Monolithic Integration
16. Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry
17. Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress
18. Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
19. Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs
20. Positive bias temperature instability evaluation in fully recessed gate GaN MIS-FETs
21. Gate Stability of GaN-Based HEMTs with P-Type Gate
22. Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate
23. MOCVD growth of DH‐HEMT buffers with low‐temperature AlN interlayer on 200 mm Si (111) substrate for breakdown voltage enhancement
24. Suspended AlGaN/GaN membrane devices with recessed open gate areas for ultra-low-power air quality monitoring
25. Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors
26. Fast beam collinear laser-rf double resonance
27. Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
28. The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate
29. Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs
30. Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology
31. Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN/GaN high electron mobility transistors on 200 mm Si substrates
32. Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate
33. Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs
34. Breakdown investigation in GaN-based MIS-HEMT devices
35. Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress
36. Improvement of the dynamic characteristics of Au-free AlGaN/GaN Schottky Diodes on 200 mm Si wafers by surface treatments
37. Trapping and Reliability Assessment in D-Mode GaN-Based MIS-HEMTs for Power Applications
38. Au-free low temperature ohmic contacts for AlGaN/GaN power devices on 200 mm Si substrates
39. Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With ${\rm Al}_{2}{\rm O}_{3}$ and ${\rm Si}_{3}{\rm N}_{4}/{\rm Al}_{2}{\rm O}_{3}$ Gate Dielectrics
40. Stability Evaluation of Insulated Gate AlGaN/GaN Power Switching Devices Under Heavy-Ion Irradiation
41. MOCVD growth of DH-HEMT buffers with low-temperature AlN interlayer on 200 mm Si (111) substrate for breakdown voltage enhancement.
42. High temperature behaviour of GaN-on-Si high power MISHEMT devices
43. Electrically active defects at AlN/Si interface studied by DLTS and ESR
44. CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon
45. (Invited) GaN-on-Si For High-Voltage Applications
46. A 96% Efficient High-Frequency DC–DC Converter Using E-Mode GaN DHFETs on Si
47. Significant enhancement of breakdown voltage for GaN DHFETs by Si substrate removal
48. Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2- $\mu\hbox{m}$ Buffer Thickness by Local Substrate Removal
49. Limitations of Field Plate Effect Due to the Silicon Substrate in AlGaN/GaN/AlGaN DHFETs
50. Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal
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