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The growth, characterization and properties of III-nitrides are examined, with a focus on the fabrication of advanced optoelectronic and electronic devices.

Research was conducted to study the impact of transmission line properties of a metal-ultrathin silicon dioxide-semiconductor field-effect transistor on the extracted inversion-layer thickness. Capacitance measurements were determined using a novel model for the gate-to-channel capacitance taking into account quantum and transmission line effects in all the regimes. Results obtained from using capacitance-voltage method are presented.

The performance and technology of industrial silicon solar cells have improved considerably in recent years. Conversion efficiencies exceeding 18% are reproducibly obtained by cost-effective technologies on large area Cz-silicon. The performance of multicrystalline silicon cells is closing-in at 17.2%. Improved material casting techniques, a refined technology, and efficient in-process material improvement techniques are found to be the major causes behind such advancement. The trend towards thinner substrates leads to considerable material cost reduction while yielding better performance. The major processing technologies and steps are critically discussed in this article, keeping in mind the priorities of today's PV industry: cost, and environmental issues. The future trends of the technology are outlined.

The interactions between an infinite array of nonperiodic dislocations in semiconductor strained epilayers are investigated. Two types of distributions,namely: the uniform-random and the Gaussian distributions, are used to calculate the energies of the arrays of dislocations. Results reveal that the energy of the dislocation arrays and the total energy of the epilayers are modified considerably by the nonperiodic distribution of the dislocations.

Presents a method of calculating the Raman spectrum from a nonuniformly strained sample. Factors which are taken into account in the calculations; Application of the method to the local oxidation of silicon structures; Details on factors influencing the Raman shift.

Presents a study to calculate the critical thickness and strain relaxation in II-VI strained epilayers, and compare them with experimental values. What commercial semiconductor lasers are based upon; Importance of short-wavelength light emitting diodes; Methodology used to conduct study; Indication of findings; Discussion on results.

Presents a study that proposed a theory for the junction capacitance of mathematically abrupt diodes. Derivation of a general junction capacitance formula; Information on a capacitance formula for an abrupt junction; Evaluation of the general capacitance formula for symmetrical and asymmetrical abrupt junction.

The stress field in laterally small strained semiconductor epilayers has been studied by the finite element method. The reaction of the epilayer on the substrate and the bulging-out effect caused by shear forces in the side wall boundaries play an important role. Analytical approximate methods are shown to be deficient. The normal stresses relax faster than a simple exponential with height z and virtually complete relaxation occurs at a height heff≊ [Square_Root]ab/2 (where a and b are the width and length, respectively, of the parallellopipidial epilayer) which is in good agreement with recent experiments. An equivalent lattice spacing fm as a function of z/[Square_Root]ab is defined and calculated. [ABSTRACT FROM AUTHOR]