Search

A miniaturised memory device for information recording and readout processes have been designed on the basis of anisotropic magnetoresistive effect in Fe15Co20Ni65(160Å)/ TiN(50Å)/Fe15Co20Ni65(160Å) three-layered film done by rf diode sputtering. Stable recording and readout processes were available for 32 rectangular element column, where each element had μm dimensions convenient to fabricate memory chip with 106 bits capacity. Rectangles of different sizes with removed corners were used in order to define the geometry of most of all stable recording and readout processes. Magnetoresistance and magnetoimpedance effects of a magnetic memory device have been comparatively analysed. We suggest that the decrease of the absolute value of the magnetoimpedance of the memory device comes from the reduction of the real part via the magnetoresistance.Se ha diseñado un dispositivo de memoria para la grabación y lectura de información basado en el efecto de la anisotropía magnetorresistiva de una multicapa fabricada por sputtering mediante diodo de rf. El elemento de memoria se compone de tres películas delgadas, de composición Fe15Co20Ni65(160Å)/ TiN(50Å)/Fe15Co20Ni65(160Å). El dispositivo permite procesos de grabación y lectura estables, y se compone de 32 elementos de memoria rectangulares por columna, donde cada elemento tiene dimensiones de μm lo que permite la fabricación de memorias integradas con capacidades del orden de 106 bits. Se han ensayado elementos de memoria rectangulares de diferentes tamaños, con las esquinas redondeadas con objeto de conseguir procesos de lectura-escritura lo más estable posible. Se han analizado comparativamente los efectos de magnetorresistencia y magnetoimpedancia de los elementos de memoria de diferentes dimensiones. Sugerimos que la disminución del valor absoluto de la magnetoimpedancia del elemento de memoria es consecuencia de la reducción de la parte real, de origen magnetorresistivo.

The article presents the results of a systematic study of the crystalline structure, microstructure, and hysteresis properties of (Cr80Mn20)/Fe bilayers, deposited on buffer coatings of various metals (Cr, Fe, W, Ta). It has been established that depending on the composition of the buffer coating and the thickness of the Cr–Mn layer, the latter develops body-centered cubic structure with either the (110) or (200) texture, or none. It is shown that the Cr–Mn layer is a source of increased coercivity in the adjacent Fe layer and when is in a certain structural state and has a relatively large thickness (100 nm) induces exchange bias in the Fe layer. The regularities obtained are interpreted in terms of the antiferromagnetic ordering of Cr–Mn and its relatively weak magnetic anisotropy. [ABSTRACT FROM AUTHOR]

Abstract—The study is related to the investigation of hysteretic and magnetostrictive properties of single-layer Fe10Ni90 films and nano-structured [Fe10Ni90/Cu]p/Fe10Ni90 films, in which magnetostrictive layers are separated with a nonmagnetic interlayer. The magnetostriction effect is shown to depend on the total layer thickness; in this case, the magnetostriction of the [Fe10Ni90/Cu]p/Fe10Ni90 film structures was found to be higher than that of the single-layer Fe10Ni90 films. The observed peculiarity is associated with weakening the fixing effect of a substrate. [ABSTRACT FROM AUTHOR]

The influence of a number of physical factors on the structural and hysteresis properties of multilayer films (Cr–Mn)/FeNi was studied. According to indirect signs, the presence of antiferromagnetism in Cr–Mn layers with a Mn content of 20–40 at % has been established. It is shown that the exchange-bias effect in such structures can be observed only when the thickness of the antiferromagnetic layer exceeds 40 nm. The initial reason for the low "fixing" properties of the Cr–Mn layer is its weak magnetic anisotropy, which is superimposed by instability in the microstructure reproduction. The use of substrate heating during deposition of films increased the reproducibility of the microstructure parameters and the hysteresis characteristics, but led to weakening of the exchange-bias effect apparently due to changes in the structure and composition of the interlayer interface. [ABSTRACT FROM AUTHOR]