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To authenticate to the full-text of this article, please visit this link: http://dx.doi.org/10.1111/j.1468-2427.2009.00887.x Byline: XAVIER GELLYNCK (1), BERT VERMEIRE (1) Abstract: Abstract In this article regional networking is defined as the set of interactions between companies and a diversity of regional partners by which the company acquires vital external resources. Previous research illustrates the positive effect of regional networking on innovation in the agribusiness sector. Furthermore, the embedded nature of networks and external resources opens opportunities for regional policymakers to enhance innovation and hence regional economic performance. Building further upon this vast literature and by interviewing food companies in a Belgian subregion, this article explores two research questions: first, the contribution of regional networking to different innovation types; second, whether, as regional policymakers aim at reinforcing these regional networks, differences in attitude towards public network support exist between the innovation classes. The discussion relates our findings to contemporary insights into the learning economy. We advocate a more targeted approach towards particular subgroups with respect to their behaviour in networking and their innovation capacity. In particular, the group of 'followers' is identified as a target group requiring appropriate support. Resume Cet article presente les reseaux regionaux comme un ensemble d'interactions entre des societes et tout un eventail de partenaires regionaux a travers lesquels l'entreprise acquiert des ressources externes essentielles. Des recherches anterieures ont montre l'incidence positive des reseaux regionaux sur l'innovation dans l'agro-industrie. En outre, reseaux et ressources externes etant par nature imbriques, ils offrent aux decideurs d'actions regionales la possibilite de stimuler l'innovation, donc les performances de l'economie regionale. A partir de ces publications et d'entretiens dans des societes agroalimentaires d'une region belge, cette etude s'interesse a deux aspects: d'une part, comment les reseaux regionaux contribuent aux divers types d'innovation; d'autre part, s'il existe, entre les categories d'innovation, des differences d'attitude a l'egard du soutien public aux reseaux, les decideurs d'actions regionales cherchant a consolider ces derniers. L'article relie les resultats de l'etude aux perspectives contemporaines sur l'economie apprenante. Il preconise une approche plus ciblee vers certains sous-groupes en fonction de leur comportement dans les reseaux et de leur capacite d'innovation. Il identifie notamment le groupe des 'suiveurs' comme cible necessitant des mesures d'aide appropriees. Author Affiliation: (1)Division of Agro-food Marketing, Department of Agricultural Economics, Faculty of Bio-Engineering, Ghent University, Belgium Article note: Xavier Gellynck (Xavier.gellynck@ugent.be) and Bert Vermeire (Bert.vermeire@ugent.be), Division of Agro-food Marketing, Department of Agricultural Economics, Faculty of Bio-Engineering, Ghent University, Coupure Links 653, 9000 Gent, Belgium.

Bipolar test structures were irradiated and annealed with various combinations of molecular hydrogen gas ambients, bias, and thermal conditions. The results show that the buildup and annealing behavior of defects in bipolar base oxides depend strongly on hydrogen concentration. Differences observed in trapped oxide charge annealing rates suggest that the charged defects created in hydrogen-rich environments may be attributed to different types of positive charge in addition to trapped holes. Index Terms--Bipolar oxide, gated bipolar devices, interface traps, hydrogen, oxide trapped charge, radiation-induced.

Laser experiments performed on two SiGe voltage controlled oscillator (VCO) circuit topologies show different output spectrums. Analytical models demonstrate that spectral response is determined by design features that impact modulated amplitude or frequency characteristic of transient signals. Further analysis of the two circuits shows the DC bias condition dependence on the topology during laser strikes, which is the main cause of the frequency and amplitude modulation of the transient output signal. Index Terms--Amplitude modulation, frequency modulation, phase noise, single-event transients, voltage-controlled oscillator (VCO).

We propose a model, validated with simulations, describing how band-to-band tunneling (BBT) affects the leakage current degradation in some irradiated fully-depleted SOI devices. It is demonstrated that the drain current dependence on total ionizing dose at negative gate bias can result from the combination of BBT and charge buildup in the BOX, including the transition to the high current state. The role of impact ionization is examined. Index Terms--Band-to-band tunneling, fully depleted SOI, GIDL, high current regime, total ionizing dose.

A hierarchical method for total dose effects simulation of large mixed signal circuits using VHDL-AMS is described. Simplified behavioral models (or macro-models) of small sub-circuits replace SPICE-level circuits. The behavioral models describe the electrical circuit behavior and its dependence on the radiation dose. The behavioral models of sub-circuits can be assembled into complex mixed signal circuits. As a result, the computational cost is reduced significantly compared to conventional SPICE-based methods. The VHDL-AMS method also allows bias-dependent total dose degradation to be coupled to the circuit and operational conditions. Simulation accuracy remains sufficient to determine critical performance metrics of the circuit as the circuit performance degrades with dose. Index Terms--Behavioral modeling, CMOS, mixed signal circuits, radiation effects, total ionizing dose (TID), VHDL-AMS.

Frequency synthesizers are fundamental building blocks in radio frequency, communications, and analog signal processing for generating high accuracy oscillatory signals. In general, the frequency synthesizer is the most sensitive block in the system since many of the signal processing elements such as clock, filters, and up/down converters depend on the synthesizer generating a clean sinusoidal signal at the given frequency. For radiation environments, the response and the sensitivity of the phase-lock loop (PLL) and the synthesizer block is very critical. This paper examines the effect of single events (SEE) radiation on the PLL locking and steady state response. The PLL circuits operating at 2.4 GHZ were designed and fabricated using a 0.13 ~m CMOS process This paper presents the experimental and simulations results on the SEE radiation effects on the PLL. Index Terms--Hold-in range, lock-in range, phase locked loop (PLL), radiation effects, single event effect (SEE), VCO.

Due to the high levels of manure application and the poor use efficiency of manure, the European agriculture is held responsible for a considerable negative impact on surface water quality (Langeveld et al., 2007). This problem has emerged particularly in Western-European countries such as the UK, Belgium, The Netherlands and Denmark, facing a large expansion and intensification process in the livestock production since the 1960s (Van der Straeten et al., 2008). Policy measures related to the application of manure on the land encompass two major measures: emission rights, understood as the amount of nutrients which can be applied on the land, differentiated by crop and the N spreading calendars, whereby the manure can only be applied when the crop needs nutrients. The fundamental aim of this pillar is to maximising application rate while avoiding overfertilisation. Maximizing the application rate is related to the economic sustainability of the agricultural sector, by altering the manure surplus, while avoiding overfertilisation is imperative in enhancing ecological sustainability, by preventing nitrate leaching to surface and soil waters. For nitrate policy to meet its target, the farmers should not exceed their emission rights, however make optimal use of their emission right for manure. Consequently, the successful implementation of sink-related measures will strongly depend of the absorptive capacity of farmers towards new ways of nutrient management in general and of animal manures in particular.

Hf and Zr contamination during immersion in process solutions is most likely to occur in neutral and caustic solutions. Both Hf and Zr contamination are introduced onto the wafer surface if they are present in an ammonium hydroxide peroxide mixture solution (which is caustic), but such contamination is removed using existing acid cleans. Large mounts of wafer-to-wafer cross contamination occurs in plasma etch tools. Particles can cause cross contamination in a thermal reactor during high-temperature anneals of high-k dielectric layers. Residual surface cross contamination does not diffuse into the wafers during thermal processing. If contamination remains on a wafer, gate oxide integrity degradation is only observed at high concentrations. Near surface minority carrier lifetime is also affected, but bulk lifetime is not. Index Terms--Cleaning, cross contamination, hafnium dioxide (Hf[O.sub.2]), high-k dielectric, zirconium dioxide (Zr[O.sub.2]).

Developing efficient wafer cleaning and rinsing requires technology for on-line monitoring of the wafer cleanliness. An electrochemical sensor is desinaed, fabricated, and tested to measure the concentration of residual contaminants oil the wafer surface during the rinse process. The sensor is based on the real time and in situ measurement of electrical impedance across a trench microstructure. The sensor's output signal is proportional to the concentration of impurities remaining in the trench and, therefore, is a measure of the progress of the rinse in cleaning the wafer surface. Electrical measurements, circuit analysis, and direct testing of the device at known impurity levels are used to select and design a suitable sensor configuration. The results confirm the feasibility and sensitivity of the device applicable to typical wafer rinsing conditions. Index Terms--Contamination, semiconductor sensor, wafer rinsing.

This work demonstrates that copper contamination present on pre gate-oxidation silicon surfaces results in yield and reliability problems particularly at field overlap edges. Similarly, the junction leakage current associated with the junction perimeter dominates the total leakage current. These detrimental device effects are shown to be caused by copper that is present close to the silicon surface even after thermal processing. Because field overlap and junction perimeter defects become relatively more important when the critical dimensions of circuits are scaled to smaller sizes, they dominate yield loss of high-density circuits, magnifying their importance for future technology generations. Index Terms - Copper contamination, gate oxide yield, junction leakage, silicon.