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1. Translation and Validation of the Premenstrual Assessment Form-Short Form Questionnaire in Hungarian

16. Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors (HEMTs)

17. Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN∕GaN high electron mobility transistors

18. Hydrogen sensors based on Sc 2 O 3 /AlGaN/GaN high electron mobility transistors

19. Hydrogen-induced reversible changes in drain current in Sc2O3/AlGaN/GaN high electron mobility transistors

21. Small signal measurement of Sc2O3 AlGaN/GaN moshemts

22. Annealing temperature stability of Ir and Ni-based Ohmic contacts on AlGaN∕GaN high electron mobility transistors

23. Comparison of Ir and Ni-based Ohmic contacts for AlGaN/GaN high electron mobility transistors

24. Uniformity of dc and rf performance of MBE-grown AlGaN/GaN HEMTS on HVPE-grown buffers

25. Improved morphology for ohmic contacts to AlGaN/GaN high electron mobility transistors using WSix- or W-based metallization

26. AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation

27. Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface

28. High three-terminal breakdown voltage and output power of Sc2O3 passivated AlGaN∕GaN high electron mobility transistors

29. The role of cleaning conditions and epitaxial layer structure on reliability of Sc2O3 and MgO passivation on AlGaN/GaN HEMTS

30. Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors

37. Base and collector resistances in heterojunction bipolar transistors

40. Emitter utilization in heterojunction bipolar transistors

42. Comparison of thermal-shunt and flip-chip HBT thermal impedances: comment on "Novel HBT with reduced thermal impedance"

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