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Your search keyword '"Violina, G. N."' showing total 12 results
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12 results on '"Violina, G. N."'

11. Photoelectric properties of p(+)-n junctions based on 4H-SiC ion-implanted with aluminum

Author

Violina, G. N., Kalinina, E. V., Kholujanov, G. F., Onushkin, G. A., Kossov, V. G., Yafaev, R. R., Hallén, Anders., Konstantinov, A. O., Violina, G. N., Kalinina, E. V., Kholujanov, G. F., Onushkin, G. A., Kossov, V. G., Yafaev, R. R., Hallén, Anders., and Konstantinov, A. O.

Abstract

The photoelectric properties of p(+)-n junctions that were based on 4H-SiC ion-implanted with aluminum and were formed in lightly doped n-type epitaxial layers grown by chemical vapor deposition were studied. It is shown that such photodetectors combine in full measure the advantages of photostructures formed on the basis of Schottky barriers and epitaxial p-n junctions. The results of the theoretical calculation of spectral characteristics of ion-implanted photodetectors are in good agreement with experimental data. The structures feature an efficiency of collection of nonequilibrium charge carriers close to 100% in the spectral range of the photon energies of 3.5-4.25 eV., QC 20100525

Published
2002
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12. A high-temperature radiation-resistant rectifier based on p+-n junctions in 4H-SiC ion-implanted with aluminum.

Author

Kalinina, E. V., Kossov, V. G., Yafaev, R. R., Strel'chuk, A. M., and Violina, G. N.

Subjects
HIGH temperatures, ALUMINUM, IONS, CRYSTALLIZATION, DIFFUSION
Abstract

A combination of a high-dose (5 s- 1016 cm-2) implantation of Al ions into epitaxial n-type 4H SiC layers grown by chemical deposition from th e vapor phase and rapid (15 s) thermal annealing at 1700–1750°C has been used to form layers with a rectangular impurity profile according to the mechanism of solid-phase epitaxial crystallization. The combined effects of enhanced diffusion of radiation defects after implantation and gettering of defects during annealing bring about an improvement in the quality of the initial material, which ensures an increase in the diffusion length of the minority charge carriers by several times. Metastable states annealed within different temperature ranges are formed in SiC under the effect of irradiation with various particles. Low-temperature annealing of radiation defects increases the radiation and temporal lifetime of devices under irradiation. High-temperature annealing of radiation defects makes it possible to vary the lifetime of nonequilibrium charge carriers, i.e, vary the frequency range of devices. The radiation resistance of SiC-based devices increases as the operation temperature is increased to 500°C. [ABSTRACT FROM AUTHOR]

Published
2010
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