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We investigated the effect of hydrostatic pressure on relaxation characteristics of the three-layer Al - n - Si [Ni] - SiO2Al structures. It was found that 20 min exposure to a pressure of 8 kbars results in reduction of the integral density of surface states, while exerting no influence on the generation centers in the bulk. [ABSTRACT FROM AUTHOR]

The effect of γ-ray radiation on the density of surface states at the interface between silicon and lead–borosilicate glass is studied. It is established that, at radiation doses higher than 106 rad, a local peak in the surface-state density at E = Ec – (0.32 ± 0.04) eV is observed. It is shown that the interface between Si and lead–borosilicate glass is more resistant to irradiation with γ-ray photons than is the Si–SiO2 interface obtained by thermal oxidation of the silicon surface. © 2004 MAIK “Nauka / Interperiodica”. [ABSTRACT FROM AUTHOR]

We studied the effect of uniform compression on characteristics of Au-n-Si Schottky barrier diodes made of overcompensated semiconductor. It is shown that overcompensation is caused by formation of structural defects owing to thermal treatment of the initial silicon wafers. [ABSTRACT FROM AUTHOR]

We have studied the effect of ultrasonic treatment on the generation characteristics of a silicon-silicon dioxide (Si-SiO[SUB2]) interface obtained by thermal oxidation of the surface of silicon. The ultrasonic treatment leads to a decrease in the surface generation rate and an increase in the generation lifetime of minority charge carriers. These effects are related to a transformation of the defect structure of a transition layer at the Si-SiO[SUB2] interface and in the adjacent region of silicon. [ABSTRACT FROM AUTHOR]

Data on the effect of ultrasound on the metal-oxide-semiconductor structures preliminary irradiated by γ-quanta are presented. It is demonstrated that the ultrasonic action results in a decrease of the radiation-induced charge in the dielectric layer of the structures under study. The observed effects are explained using a mechanism of the ultrasound-stimulated diffusion of radiation defects in the field of elastic stresses in the layer of silicon dioxide. [ABSTRACT FROM AUTHOR]