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192 results on '"Volovik, B. V."'

9. Heteroepitaxial growth of InAs on Si: A new type of quantum dot

Author

Cyrlin, G. E., Petrov, V. N., Dubrovskii, V. G., Samsonenko, Yu. B., Polyakov, N. K., Golubok, A. O., Masalov, S. A., Komyak, N. I., Ustinov, V. M., Egorov, A. Yu., Kovsh, A. R., Maximov, M. V., Tsatsul’nikov, A. F., Volovik, B. V., Zhukov, A. E., Kop’ev, P. S., Ledentsov, N. N., Alferov, Zh. I., and Bimberg, D.

Published
1999
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19. Formation of InSb quantum dots in a GaSb matrix

Author

Tsatsul’Nikov, A. F., Ivanov, S. V., Kop’Ev, P. S., Kryganovskii, A. K., Ledentsov, N. N., Maximov, M. V., Mel’Tser, B., Nekludov, P. V., Suvorova, A. A., Titkov, A. N., Volovik, B. V., Grundmann, M., Bimberg, D., and Alferov, Zh. I.

Published
1998
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38. Accuracy analysis of the kinematic equation integration algorithms of a rigid body motion

Author

Melashchenko, O. M. and Volovik, B. V.

Subjects
безплатформна інерціальна навігаційна система, ориентация, бесплатформенная инерциальная навигационная система, интегрирования, strapdown inertial navigation system, integration, інтегрування, orientation, sampling frequency, БИНС, кінематичні рівняння, 681.3+615.89, частота дискретизації, the algorithm, частота дискретизации, БІНС, кинематические уравнения, орієнтація, алгоритм, SINS, kinematic equations
Abstract

Увагу зосереджено на похибках алгоритмів числового інтегрування кінематичних рівнянь твердого тіла і методах її зменшення. Зокрема, підтверджена, в умовах наявності конічного руху, можливість подання простих за своєю структурою алгоритмів числового інтегрування на високій частоті дискретизації зі збереженням точності в порівнянні з більш точнішими і структурно складними алгоритмами, що реалізуються на нижчих частотах. In many papers considered uses of strapdown inertial navigation system (SINS) as an alternative to platform systems. The advantage of SINS is high reliability, smaller size, simplicity and lower cost. The structural feature of SINS is rigid mounting of the inertial sensors directly on the vehicle, which is the source of number errors in these systems. One of the main error sources in SINS is conical motion, which could be caused by the vibrations of the engine or complex evolutions of vehicle. Such SINS motion can lead to error accumulations of the vehicle coordinates in digital signal processing from inertial sensors. The necessity to increase the accuracy of solving navigational problems encourages to improve algorithms for data processing of initial SINS sensors. With the rapid development of microprocessor technology currently available hardware processing of the initial sensors data at very high frequency. Most SINS algorithms developed at the present day was created taking into account the available limited computational resources. However, due to conditions of sampling theorem to successfully signal recover the sampling frequency should be at least two times higher than the rate by which limited range of the processed signal. To resolve this problem integration algorithms of SINS kinematic equations consisted assumptions about the possible type of vehicle mition and to increase the accuracy was developed increasingly sophisticated algorithms aimed at approximation to the true calculated motion. Such algorithms require a priori knowledge about motion, which may be a source of SINS errors. Besides operate of complex algorithms introduces additional delays in the circuit and can be a significant obstacle to implementation of the control system on highly dynamic object. The article focuses on algorithm errors of numerical integration of rigid body kinematic equations and methods of its reduction. In particular, at the presence of a conical motion confirmed the possibility of simple structure numerical integration algorithms in high frequency sampling with keeping accuracy when compared with the more accurate and structurally sophisticated algorithms that are implemented at the lower frequencies. Besides higher sampling rate allows faster obtain information about the position of the vehicle, which is particularly important for highly dynamic aircraft. Внимание сосредоточено на погрешностях алгоритмов численного интегрирования кинематических уравнений твердого тела и методах ее уменьшения. В частности, подтверждена, в условиях наличия конического движения, возможность представления простых по своей структуре алгоритмов численного интегрирования на высокой частоте дискретизации с сохранением точности по сравнению с более точными и структурно сложными алгоритмами, которые реализуются на низких частотах.

Published
2012

39. Nitrogen-Activated Phase Separation in InGaAsN/GaAs Heterostructures Grown by MBE

Author

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST, Soshnikov, I. P., Ledentsov, N. N., Volovik, B. V., Kovsh, A., Maleev, N. A., RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST, Soshnikov, I. P., Ledentsov, N. N., Volovik, B. V., Kovsh, A., and Maleev, N. A.

Abstract

InGaAsN insertions in a GaAs matrix grown by molecular beam epitaxy (MBE) demonstrate a pronounced effect of phase separation even at relatively low indium and nitrogen concentrations. Cross-section high-resolution transmission electron microscopy (TEM) images processed using a specially developed software demonstrated an effect of nitrogen decomnon of InAs-rich regions in the structures studied. Formation of ordered structures of compositional domains has been revealed in plan-view TEM images., This article is from ADA408025 Nanostructures: Physics and Technology International Symposium (9th), St. Petersburg, Russia, June 18-22, 2001 Proceedings

Published
2001

40. Effect of Growth Conditions on Optical Properties of Ge Submonolayer Nanoinclusions in a Si Matrix Grown by Molecular Beam Epitaxy

Author

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST, Cirlin, G. E., Egorov, V. A., Volovik, B. V., Tsatsul'nikov, A. F., Ustinov, V. M., RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST, Cirlin, G. E., Egorov, V. A., Volovik, B. V., Tsatsul'nikov, A. F., and Ustinov, V. M.

Abstract

Optical properties of the Ge submonolayer (SML) nanoinclusions in a Si matrix grown by moleeular beam epitaxy (MBE) are investigated. It is shown that at relatively high growth temperatures (> 600 C) there are new features which appear in a PL spectra. These features correspond to formation of the germanium nanoobjeets in a silicon media., This article is from ADA408025 Nanostructures: Physics and Technology International Symposium (9th), St. Petersburg, Russia, June 18-22, 2001 Proceedings

Published
2001

41. Optical Properties of InGaAsN/GaAs Quantum Well and Quantum Dot Structures for Longwavelength Emission

Author

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST, Volovik, B. V., Kovsh, A. R., Passenberg, W., Kuenzel, H., Musikhin, Yu. G., RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST, Volovik, B. V., Kovsh, A. R., Passenberg, W., Kuenzel, H., and Musikhin, Yu. G.

Abstract

This report investigated the optical properties of heterostructures with InGaAsN/ GaAs QW-like and QD-like insertions. GaAsN and InGaAsN layers with relatively high nitrogen content (more than 1%) were grown. The long wavelength emission tip to 1.32 microns at room temperate was realized. TEM and optical studies confirm formation of quantum dots for the case of higher indium concentrations., Pres: 8th Int Symp Nanostructures: Physics and Technology, St Petersburg, Russia. 19-23 Jun 2000. p148-151. This article is from ADA407315 Nanostructures: Physics and Technology International Symposium (8th) Held in St. Petersburg, Russia on June 19-23, 2000 Proceedings

Published
2000

42. 1.3 Micrometers Photoluminescence Emission from InAs/GaAs Quantum Dots Multilayer Structures

Author

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST, Egorov, V. A., Petrov, V. N., Polyakov, N. K., Cirlin, G. E., Volovik, B. V., RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST, Egorov, V. A., Petrov, V. N., Polyakov, N. K., Cirlin, G. E., and Volovik, B. V.

Abstract

Optical properties of multilayer structures with quantum dots InAs on GaAs are investigated. It is shown that under optimal growth conditions the 1.3 micrometers emission could be achieved. Possible scenarios Of quantum dots behaviour evaluation is discussed in a frame of elastic theory to explain differences in optical properties of the grown structures., This article is from Nanostructures: Physics and Technology Intl Symposium (8th), p. 402-405 This article is from ADA407315 Nanostructures: Physics and Technology International Symposium (8th) Held in St. Petersburg, Russia on June 19-23, 2000 Proceedings

Published
2000

43. Lasing from Quantum Dots Formed by Activated ALloy Spinodal Decomposition on InAs Stressors

Author

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST, Maximov, M. V., Shernyakov, Y. M., Tsatsul'nikov, A. F., Volovik, B. V., Bedarev, D. A., RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST, Maximov, M. V., Shernyakov, Y. M., Tsatsul'nikov, A. F., Volovik, B. V., and Bedarev, D. A.

Abstract

We demonstrate injection lasing in structures with a novel type of quantum dots (QDs) formed by activsaed spinodal decomposition on InAs stressors. At low temperatures the lasing is observed via the first exited QD exciton state with the lasing wavelength of 1.1 micrometer. With temperature increase lasing switches to higher energy states but remains up to room temperature. Simultaneous lasing via two energy states is also observed., Pres: 7th Int Symp Nanostructures: Physics and Technology, St Petersburg, Russia. 14-18 Jun 1999. p135-138. This article is from ADA407055 Nanostructures: Physics and Technology. 7th International Symposium. St. Petersburg, Russia, June 14-18, 1999 Proceedings

Published
1999

44. Resonant Waveguiding and Lasing in Structures with InAs Submonolayers in an AlGaAs Matrix

Author

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST, Tsatsul'nikov, A. F., Ledentsov, N. N., Maximov, M. V., Volovik, B. V., Egorov, A. Y., RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST, Tsatsul'nikov, A. F., Ledentsov, N. N., Maximov, M. V., Volovik, B. V., and Egorov, A. Y.

Abstract

This work studies optical properties III-V structures with SML InAs insertions in an AlGaAs matrix. Lasing under photoexcitation is demonstrated for the structure without external optical confinement. Lasing occurs on a low energy side of the exciton resonance at low excitation densities pointing to the importance of this structures for improved optical confinement in AIGaAs injection laser operating in the visiblel range, excitonic waveguides and self-adjusted microcavities., Pres: 6th Int Symp Nanostructures: Physics and Technology, St Petersburg, Russia. 22-26 Jun 1998. p382-385. This article is from ADA406591 Nanostructures: Physics and Technology International Symposium (6th) held in St. Petersburg, Russia on June 22-26, 1998 Proceedings

Published
1998

47. Near- and mid-infrared spectroscopy of InGaAs/GaAs quantum dot structures

Author

Shalygin, V A, primary, Vorobjev, L E, additional, Glukhovskoy, A V, additional, Danilov, S N, additional, Panevin, V Yu, additional, Firsov, D A, additional, Volovik, B V, additional, Ledentsov, N N, additional, Livshits, D A, additional, Ustinov, V M, additional, Shernyakov, Yu M, additional, Tsatsul'nikov, A F, additional, Weber, A, additional, and Grundmann, M, additional

Published
2001
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49. Optical phenomena connected with intraband carrier transitions in quantum dots and quantum wells

Author

Vorobjev, L E, primary, Danilov, S N, additional, Gluhovskoy, A V, additional, Zerova, V L, additional, Zibik, E A, additional, Panevin, V Yu, additional, Firsov, D A, additional, Shalygin, V A, additional, Andreev, A D, additional, Volovik, B V, additional, Zhukov, A E, additional, Ledentsov, N N, additional, Livshits, D A, additional, Ustinov, V M, additional, Shernyakov, Yu M, additional, Tsatsulnikov, A F, additional, Weber, A, additional, Grundmann, M, additional, Schmidt, S R, additional, Seilmeier, A, additional, Towe, E, additional, and Pal, D, additional

Published
2001
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50. Vertical-cavity emitting devices with quantum-dot structures

Author

Ustinov, Viktor M, primary, Maleev, N A, additional, Zhukov, A E, additional, Kovsh, A R, additional, Sakharov, A V, additional, Volovik, B V, additional, Tsatsul'nikov, A F, additional, Ledentsov, N N, additional, Alferov, Zhores I, additional, Lott, J A, additional, and Bimberg, D, additional

Published
2001
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