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We report an n-type Ge nanowire ferroelectric-Hf 0.5 Zr 0.5 O 2 field effect transistor (Ge NW FE-HZO FET) was experimentally demonstrated. An in-situ ALD O 3 treatment was carried out to form an atomically-thin (~0.4 nm) interfacial layer (IL) of GeO x , followed by a 2-nm FE-HZO capped with a 1-nm Al 2 O 3 layer. It is found that microwave annealing (MWA) sample shows better uniformity of FE-HZO properties compared to rapid thermal annealing (RTA). The fabricated Ge NW FE-HZO FET shows minimum subthreshold slope (SS min ) of 55 mV/decade and I ON /I OFF ratio of 8.1 × 104 with low hysteresis (30 mV) at drain voltage (V D ) of 0.1 V.

For the first time, a 3D stacking of MoS 2 and Si CMOS integrated with embedded RRAM is proposed and fabricated, and CMOS inverter comprised of MoS 2 nFET and Si pFET is demonstrated. Vertically stacked multiple MoS 2 channels are required for the performance matching. Resistive switching (RS) of a Ti/MoS 2 /p+-Si structure showing high ON/OFF ratio of 106 is demonstrated firstly by highly Si-compatible process. Surface modification is the key to formation of uniform and smooth stacked MoS 2 multiple channels and to enhanced resistive switching endurance. This scheme can be applied to CMOS-based bipolar RRAM 1T1R or 2T1R without increasing the cell size. Our work offers a new pathway with high feasibility of integrated 2D materials and Si FETs into CMOS to enabling 3D embedded logics and memories for future computing systems.

For the first time, we demonstrate heterogeneous complementary FETs (hCFETs) with Ge and Si channels fabricated with a layer transfer technique. The 3D channel stacking integration particularly employs a low-temperature (200 °C) hetero-layers bonding technique (LT-HBT) realized by a surface activating chemical treatment at room temperature, enabling Ge channels bonded onto Si wafers. Furthermore, to obtain symmetric performance in n/p FETs, a multi-channel structure of two-channel Si and one-channel Ge is also implemented. Wafer-scale LT-HBT is demonstrated successfully, showing new opportunities for the ultimate device footprint scaling with heterogeneous integration.

In this study, we discuss Si-SiGe etch characteristics as well as SiGe surface composition modification. It is required to etch Si and SiGe simultaneously for Si/SiGe dual channel Fin-FETs. Therefore, etch control of these two materials is desired. However, not only halogen chemistries but also physical sputtering etch SiGe selective to Si. We found that Si can be etched faster than SiGe by hydrogen plasma. Our analysis presents that hydrogen bonds selectively with Si rather than Ge, which leads to Si selective removal. As for SiGe surface modification, realizing Si-rich surface in SiGe is known to improve SiGe/high-k interface quality in advanced CMOS. It is also presented that the low-temperature hydrogen plasma induces Si-surface segregation (i.e., Si-rich surface) in SiGe, which is confined near the top-surface region. We proposed this may be caused by ion-energy-driven surface reaction. Our study also shows that Ge/Si ratio increases with plasma exposure time, which has correlation with surface roughness. Using the hydrogen plasma and conventional halogen plasma, we successfully demonstrate to etch Si/SiGe dual channel fins with depth and CD value control.

Improved electrical characteristics of CMOS inverters composed of Ge n- and p-finFETs were demonstrated by utilizing newly introduced Ge surface treatments. In-situ digital O3 treatment in ALD chamber was adopted on the surface of Ge fin sidewall in order to reduce the roughness and etching damages through the GeO desorption mechanism. The treatment effects were checked by AFM and C-V measurements. By combining this treatment with optimized microwave annealing, sub-threshold slope and the $\text{I}_{\mathrm{ ON}}/\text{I}_{\mathrm{ OFF}}$ ratio were remarkably improved in both n-finFET and p-finFET, and Ge CMOS inverters with high voltage gain of 50.3 V/V at low ${V}_{D}= 0.6$ V was realized. Finally, simulations on an ideal Ge CMOS inverter were presented.

Opened air cycle is a promising sewage concentration technology using heated air as the medium to absorb water from the sewage. Unlike closed cycles, the air flow is directly ejected out of the system after humidification in opened cycles. Operating conditions and the circle’s efficiency are highly affected by the weather, such as the time-varying ambient temperature and relative humidity. Since the evaporating temperature relies on the ambient temperature, to restrain its dependence, the evaporator was proposed combined with the ejected air flow in this paper. Such a design could improve the efficiency of the heat pump by increasing its evaporating temperature. Simulation of the newly proposed open sewage concentration cycle was performed to investigate its thermal process and economic efficiency under actual weather conditions. Thermodynamic models of the compressor, heat exchangers and the sewage concentration chamber were established. Climatic conditions at Xi’an, China were referenced as actual weather conditions. Optimisation of the working parameters was performed to achieve higher economic index. The results demonstrated that the average monthly power consumption of the optimized cycle was 0.3508 kWh/kg. Compared with the published data of the closed cycle, the total cost of new opened cycle was nearly one-third lower.

A series of multi-principal-element (MPE) alloys have been prepared by adding Ni, Mn, Al, Cu and Y into the reference CoCrFe-B alloy. The microstructure and mechanical properties of these MPE alloys have been investigated thoroughly. It is found that the addition of the elements can inhibit boride precipitation in the designed alloys and the solid solution strengthening effect induced by interstitial boron atoms is more significant than that by boride precipitation. The MPE alloys with the fcc phase as the main solid solution phase have a higher boron solubility and hence less boride precipitation, than those with the bcc phase as the main solid solution phase. The addition of yttrium can improve the boron solubility, decrease boride precipitation, control the boride morphology and, importantly, simultaneously improve the compressive strength and ductility of boron-containing MPE alloys.

For the first time, CMOS inverters and 6T-SRAM cells based on vertically stacked gate-all-around complementary FETs (CFETs) are experimentally demonstrated. Manufacturing difficulties of vertically stacked source and drain electrodes of the CFETs have been overcome by using junctionless transistors, thereby reducing the number of lithographic steps required. Furthermore, with post metallization treatments, both the voltage transfer characteristics (VTCs) of CMOS inverters and butterfly curves of SRAM show significant improvements due to the symmetry of nMOS and pMOS threshold voltages. Simulation shows that 3-dimensional CFET inverters have lower input parasitic capacitance than standard 2-dimensional CMOS, leading to reduced gate delay and lower power consumption.

This paper clarifies for the first time the origin of ferroelectricity in the Negative Capacitance Field-Effect Transistors (NCFETs) by molecular dynamics (MD) simulation. MD simulation considering atomic interactions between all atoms enables accurate predictions for the microstructure even at all interfaces. By incorporating the results from MD simulations into a kinetic model, it is able to predict the conditions of crystallization and phase transition during RTP and cooling processes that govern ferroelectricity in FETs. Our simulation reveals that the comparable interfacial energy between o-and t-phase, and in-plane tensile stress from metal capping or interfacial layers (ILs) enable more phase transition from t-to o-phase, and more ferroelectricity in NCFETs. Finally, design methodology to maintain the electric variation of NCFETs is also proposed

家族性高胆固醇血症（FH）是由于低密度脂蛋白代谢异常在体内沉积，从而引发多部位黄色瘤、早发冠心病等一系列心血管疾病，严重威胁心血管健康的疾病。目前国际上发布了多个成人FH治疗和管理指南，日本儿科协会和日本动脉粥样硬化学会联合工作组发表了儿童FH指南，本文重点解读了指南中对于儿童FH的诊断标准、诊断流程和治疗方法，以期为我国儿童FH治疗提供参考。.

$\Omega$ -gated negative capacitance (NC) FinFETs, CMOS inverters and SRAM are fabricated and analyzed. Forming gas annealing (FGA) is performed and found to not only enhance ferroelectricity (FE) but also the NCFET electrostatics, in terms of higher $\mathrm{I}_{\mathrm{ON}}$ , smaller hysteresis and subthreshold slop (SS). The SS is less than 60 mV/dec for both N-FinFET and P-FinFET in this work. Moreover, the CMOS inverter shows more symmetric and larger voltage gain after FGA.

The impact of a realistic representation of gate-oxide granularity on negative-capacitance (NC) FETs at sub-5nm node is studied by a newly developed thermodynamic energy model based on the first principle calculation (FPC). For the first time, the calculation fully couples the Landau-Khalatnikov (L-K) equation with grain-size effect equation in NC-FETs. It explains the experimental results in phase transition and reveals excellent immunity against depolarization in ferroelectric (FE) layer owing to dopant concentration and stress in thin films. A sub-5nm node (LG=10nm) NC-FET with thin FE layer (T FE ~2nm) is integrated to achieve low subthreshold slope (SS) of 52mV/dec via a 1.9GPa-tensor stressed interfacial layer (IL) and 12% Zr-doped HfO 2 .

Ge nanowire (NW) FETs exhibiting subthreshold swing (SS) of 54 mV/dec at room temperature are demonstrated with ferroelectric HfZrOx (FE-HZO) gate stack for the first time. Ion/Ioff ratios higher than 107 and 106 for p- and n-NWFETs, respectively, have been achieved by adopting the gate-all-around (GAA) configuration. Electrical biasing effects on the HZO ferroelectric reliability have been systematically investigated in this work. It is found that the polarization behavior will degrade with electrical stress time and can be recovered. The Ge HZO FinFET CMOS inverter shows experimentally voltage gain of 24.8 V/V.

Ge n- and p-FinFETs with different interfacial layer ferroelectric HfZrO x (IL-FE-HZO) gate stacks have been demonstrated systematically by various annealing conditions for the first time. Microwave annealing (MWA) not only shows enhanced FE characteristics but also suppresses the gate leakage and Ge interdiffusion compared with conventional rapid thermal annealing (RTA). While HZO on Al 2 O 3 IL results in paraelectric behavior, HZO on GeO x IL exhibits significant FE. High I on /I off (> 107) and low subthreshold slope (S.S. ∼ 58 mV/dec.) are demonstrated by a Ge nFinFET with a gate length (L g ) of 60 nm and a FE-HZO/GeO x gate stack.

Based on resonant interactions between atoms and cavity modes, we have designed a scheme for expanding atomic entangled W states. By sending one of the atoms in a N-atom W state and an auxiliary excited-state atom into an vacuum cavity, we have obtained a (N ? 1)-atom W state by detecting the cavity field after interaction. The feasibility analysis indicates that this scheme may be implementable in near future.

We aimed to analyze how genetic and environmental factors account for variations in body mass index (BMI), waist circumference (WC) and their mutual correlation in Chinese children. We measured BMI and WC in 588 pairs of twins (53 % monozygotic twins) aged 8–17 years and applied structural equation modeling to the data. For the younger children (8–12 years of age), heritability estimates of BMI were 0.56 for boys and 0.69 for girls; for the older children (13–17 years of age), the corresponding figures were 0.64 and 0.71, respectively. We observed moderate heritability estimates in WC: the corresponding figures were 0.24 and 0.56 for the younger children, and 0.27 and 0.33 for the older children, respectively. The heterogeneity test for genetic variance of BMI and WC was statistically significant between the two age groups for both sexes (p

Ge peaking n- and p-FinFETs have been demonstrated by adopting neutral beam etching (NBE) and anisotropic neutral beam oxidation (NBO) processes. The irradiation-free NB processes not only suppress surface roughness but also guarantee low defect generation on the etched Ge surface. The fabricated Ge peaking FinFETs possess several unique features: (1) A peaking fin configuration with a 6-nm top-gate formed by an anisotropic NBO process at room temperature. (2) Nearly defect-free three dimensional channel surfaces by NB processes. (3) Ion and Gm improvement by NB processes as compared to that by conventional inductively coupled plasma etching (ICP). (4) Recorded high Ion/Ioff ratio and low subthreshold swing (S.S. ∼ 70 mV/dec.) of Ge n-FinFETs. (5) Excellent immunity for short channel effect of Ge FinFETs.

In this paper, strain effects on silicon n-channel gate-all-around (GAA) jucntionless field effect transistor (JLFET) are studied. By using tensile strain SiN layer, drive currents of the JLFETs show enhancement of up to 42%. The high performance strained JLFETs exhibit superior gate control (I on /I off >109) and ideal S.S. (65 mV/dec.) as a channel width scales down to 20 nm. Drive currents and leakage currents are improved simultaneously after inducing strain technology.

Catastrophic failure along a dominant shear band sets the limit on how much plasticity can be achieved in metallic glasses (MGs) under uniaxial compression. Here we show that this instability process is governed by a single system parameter, called the shear-band instability index (SBI), which is proportional to sample size and inversely proportional to machine stiffness. We provide extensive experimental proof of this concept by conducting a series of tests with a range of controlled values of sample size and machine stiffness. The theory of SBI has led us to a more comprehensive understanding of the mechanisms of plastic deformation in MGs via simultaneous operation of multiple shear bands versus a single dominant one. This concept provides a theoretical basis to design systems which promote plasticity/ductility in MGs by suppressing or delaying shear-band instability.

A “stress gradient enhanced plasticity” concept has been proposed to alleviate the concern of catastrophic failure of BMGs. It was found that, with a standard orthogonal geometry the Zr-based BMG typically fractured catastrophically with a single dominate shear band. In great contrast, by slightly modifying the sample geometry while maintaining its aspect ratio of 2, the BMG did show a large displacement prior to failure with multiple shear bands consistently being observed. This strong geometry dependence of deformation behavior has been interpreted in terms of stress gradient, which largely constrained the nucleation and subsequent propagation of single shear band and encouraged the formation of multiple shear bands considering the high strength uniformity of BMG. These results present a new method on arresting the catastrophic failure of the glassy alloys and offer ways for BMGs in engineering applications.

To investigate the flaw sensitivity and reliability of bulk metallic glasses (BMGs), compressive testing was performed on a statistically significant number of specimens. Despite the fact that BMGs exhibit little or no macroscopic plasticity before failure (similar to other brittle materials), we observe surprisingly high uniformity in compressive strength. Weibull analysis was employed to study the statistical dispersion in strength, giving very high Weibull moduli of about 25 for an intrinsically brittle glass, and near 75 for an intrinsically malleable one. This high uniformity is encouraging for the use of BMGs in structural applications. Furthermore, we illustrate that subtle imperfections in the test geometry (i.e. miscut or deviations from orthogonality) dramatically affect the compression response. In brittle glasses these act as failure-critical flaws, whereas in malleable glasses they constrain shear bands, lead to tilting and bending during testing, and give rise to misleading macroscopic measu...

Intranasal corticosteroids (INS) have been proven effective in controlling postnasal drip, decreasing inflammatory response, reducing nasal swelling, and increasing aeration of the sinuses such that INS are recommended as treatment of sinusitis.Fifty children with acute rhinosinusitis, 50 children with acute rhiniosinusitis and allergic rhinitis (AR), and 20 rhiniosinusitis children as control were selected for investigation. Each group had a single-blind treatment of three types: with coamoxiclav only, with coamoxiclav plus INS, and with matched placebo (without antibiotics and INS) for two weeks. Nasal symptoms were then evaluated. The outcome was measured by using major symptom score (MSS) after treatment for 14 days.Therapeutic effectiveness was 92% in rhinosinusitis patients treated with co-amoxiclav and 84% in those treated with co-amoxiclav plus INS. Among patients with sinusitis combined with AR, therapeutic efficacy was 88% for those treated with co-amoxiclav and 96% for those treated with co-amoxiclav plus INS. Only 30% of the symptoms were reduced in the placebo group.There are no statistical differences in the acute sinusitis group treated with co-amoxiclav with or without INS. In the sinusitis with AR group, the efficacy of co-amoxiclav with INS is higher than in children treated with co-amoxiclav alone.

The interest in the low resistivity fully silicided (FUSI) gate increased significantly because of promising in use as contact to the source, drain, and gate for sub−65 nm/45 nm CMOS devices. NiSi is potentially an attractive material due to its capability to maintain low resistivity even for channel length down to 100 nm. The Formation of thermally stable silicide gates is important for improving the devices fabrication processes. In order to obtain a thermally stable Ni-FUSI gate electrode, we introduced a two-step annealing process associated with properly tuned thickness of the initial Ni film and additional of implantation of BF2 during the poly-gate formation to push the transformation of NiSi2 to higher temperatures at about 900°C and retard agglomeration. A mixed-phase of nickel silicide layer was commonly observed during phase transformation. For the first time, we established an effective way to identify the phase transformations by some nondestructive techniques such as X-ray diffraction, sheet resistance measurement and AFM analysis. The correlations between its electrical and morphological changes during Ni–Si phase transformation were presented. Furthermore, the effect with addition amount of BF2 impurities into NiSi was investigated. F-incorporation demonstrated some improvements in both morphology and phase stability of the NiSi films at high processing temperatures.

Interleukin-4 receptors (IL-4Rs) are expressed on a wide variety of human cancer cells, and therefore it may be a good option to treat IL-4R-bearing tumors with IL-4-fusing immunotoxins. In this study, the gene encoding human interleukin-4 mutein cpIL-4(13D) was obtained through overlapping polymerase chain reaction. A chimeric immunotoxin was constructed by genetically fusing the mutein cpIL-4(13D) to a modified version of Pseudomonas exotoxin A (PE38KDEL) and was expressed in Escherichia coli AD494 (DE3). The expression level of the fusion protein was about 30% of the total bacterial protein assessed by SDS-PAGE analysis. After purification by affinity chromatography and anion exchange chromatography, the chimeric protein was tested for its cytotoxicity. Our data show that cpIL-4(13D)-PE38KDEL has improved cytotoxicity on IL-4R-bearing tumor cells in comparison with other IL-4-fusing immunotoxins and might be useful in treating tumors with a large number of IL-4Rs.

An organic SOG, the Hybird-Organic-Siloxane-Polymer (HOSP), has high applicability to ULSI processes, because of the low dielectric constant of about 2.5. However, the HOSP film will be damaged after photoresist removal. The function groups of HOSP will be destroyed by O2 plasma ashing and chemical wet stripper, which leads to electrical degradation. In order to avoid the issue, H2 plasma treatment is proposed to prevent HOSP film from photoresisit stripping damage. It is found that leakage current is decreased significantly and the dielectric constant is still maintained at a low k value even after photoresist stripping. Therefore, H2 plasma treatment is an effective technique to enhance the resistance of HOSP film against photoresist stripping damage.

For the first time, a novel junctionless (JL) FinFET structure with a shell doping profile (SDP) formed by molecular monolayer doping (MLD) method and microwave annealing (MWA) at low temperature is proposed and studied. Thanks to the ultra thin SDP leading to an easily-depleted channel, the proposed JLFinFET can retain the ideal subthreshold swing (∼ 60 mV/dec) at a high doping level according to simulations. Poly Si based JLFinFETs processed with MLD and MWA exhibit superior subthreshold swing (S.S. ∼ 67mV/dec) and excellent on-off ratio (>106) for both n and p channel devices. Threshold voltage (V TH ) variation due to random dopant fluctuation (RDF) is reduced in MLD-JLFinFETs, which can be attributed to the molecule self-limiting property of MLD on the Si surface and quasi-diffusionless MWA at low temperature. Our results reveal the potential of the proposed SDP enabling a JLFET showing reduced variation and outstanding performance for low power applications.

Low density materials, such as hydrogen silsesquioxane (HSQ), can offer lower dielectric constants. With HSQ, a low value of K can be achieved if the density of Si H bonding is maintained at a high level and the formation of –OH bonds and absorption or creation of water in the film is minimized. In this work, we have studied the use of hydrogen plasma to improve the quality of HSQ. In addition, the effects of N 2 and O 2 plasma post-treatments on HSQ are investigated. The leakage current of HSQ decreases as the H 2 plasma treatment time is increased. However, the leakage current of HSQ increases as the N 2 and O 2 plasma treatment time is increased. A model is proposed to explain the role of hydrogen in HSQ. The hydrogen passivates the surface of porous HSQ. The H 2 plasma treatment provides additional hydrogen passivation of the HSQ. On the other hand, the N 2 and O 2 plasma treatments reduce the hydrogen passivation of HSQ. As a result, both the leakage current and dielectric constant increase as the N 2 and O 2 plasma treatment time is increased. Finally, HSQ with H 2 plasma treatment is used as the intermetal dielectric in a multilevel interconnection structure. Consistent with our model, the via resistance decreases with increasing H 2 plasma treatment time.

Conformal TiN films were deposited by thermal low-pressure-chemical-vapor-deposition (LPCVD) in a rotating disk reactor, using TiCl 4 and NH3 with N2 as a dilution gas. TiN plug with 0.05 mm contact size was achieved. No void formation was observed in the TiN plug. The result demonstrated that LPCVD-TiN can be used to fill very small contact holes. The excellent step coverage and uniformity resulted from a surface-reaction-rate-limited deposition. The resistivity of TiN film was reduced to 133 mQcm by in-situ NH3 plasma post-treatment. The concentration of chlorine in the TiN film was measured to be less than 2 atomic % (at.%) by Auger electron spectroscope measurement. For Al deposited on TiN, the Al orientation was found to be dependent on the deposition method of Al film, but not on the underlying TiN orientation. © 1997 Elsevier Science S.A.

In order to predict the fatigue crack growth curve under random loading, an analytical model is proposed in this paper. In addition to the mean crack growth curve, the model also considers the statistical variation of the crack growth curves under the same nature of random loading, as well as the material reliability after certain loading cycles are applied. To check the applicability of the prediction model, several fatigue experiments are performed. After comparing the analytical result with the experimental result, the following conclusions are drawn. (i) Under the same mean value and standard deviation for the stress amplitudes, the fatigue crack growth curves are influenced by the probability density function of the stresses. (ii) An “equivalent constant loading” and a crack closure model lead to better prediction than any other model. (iii) The variation of the crack growth curves can be predicted accurately for shorter crack lengths and conservatively for longer crack lengths. (iv) The prediction of the statistical variation can be improved by modifying the definition of the equivalent constant loading. (v) Fatigue reliability can be reasonably estimated. The foregoing conclusions can be taken into consideration in the design of pressure vessels which are frequently subjected to transients of random nature.

Cell culture studies, ring studies, and indirect physiologic studies are the predominant models used to study human vascular tissue. Such studies are limited in their capacity to permit physiologic single-factor changes or to provide the proper mechanical effects. This paper presents a devised culture system that addresses the vessels with different diameters and permits survival of intact segments of the vessels in a perfused environment. Methods: Perfusion culture system was designed and constructed with a peristaltic pump, tubing, a vessel culture chamber, a compliance chamber, a pressure regulator, a pressure monitor, silicon tubing and some spigots in several diameters, which could connect to the chambers’ polycarbonate tubing and silicon tubing, suitable for several size of vessels. Vein segments of rabbits, with 2.0mm, 4.0mm and 6.0mm sizes, were collected and mounted into the perfusion culture system with perfusate. The intraluminal pressure, pulsatile pressure difference and flow were surveyed. The results showed vessels in several sizes could be cultured in a controlled environment of dynamic changes with easy manipulation. This perfusion culture system permits relevant studies risk factor changes in the perfusate.

Transitional cell carcinoma (TCC) of the urothelium is often multifocal and subsequent tumors may occur anywhere in the urinary tract after the treatment of a primary carcinoma. Patients initially presenting a bladder cancer are at significant risk of developing metachronous tumors in the upper urinary tract (UUT). We evaluated the prognostic factors of primary invasive bladder cancer that may predict a metachronous UUT TCC after radical cystectomy. The records of 476 patients who underwent radical cystectomy for primary invasive bladder TCC from 1989 to 2001 were reviewed retrospectively. The prognostic factors of UUT TCC were determined by multivariate analysis using the COX proportional hazards regression model. Kaplan-Meier analysis was also used to assess the variable incidence of UUT TCC according to different risk factors. Twenty-two patients (4.6%). developed metachronous UUT TCC. Multiplicity, prostatic urethral involvement by the bladder cancer and the associated carcinoma in situ (CIS) were significant and independent factors affecting the occurrence of metachronous UUT TCC (P = 0.0425, 0.0082, and 0.0006, respectively). These results were supported, to some extent, by analysis of the UUT TCC disease-free rate by the Kaplan-Meier method, whereby patients with prostatic urethral involvement or with associated CIS demonstrated a significantly lower metachronous UUT TCC disease-free rate than patients without prostatic urethral involvement or without associated CIS (log-rank test, P = 0.0116 and 0.0075, respectively). Multiple tumors, prostatic urethral involvement and associated CIS were risk factors for metachronous UUT TCC, a conclusion that may be useful for designing follow-up strategies for primary invasive bladder cancer after radical cystectomy.

Interleukin-4 receptors (IL-4Rs) are expressed on a wide variety of human cancer cells, and therefore it may be a good option to treat IL-4R-bearing tumors with IL-4-fusing immunotoxins. In this study, the gene encoding human interleukin-4 mutein cpIL-4(13D) was obtained through overlapping polymerase chain reaction. A chimeric immunotoxin was constructed by genetically fusing the mutein cpIL-4(13D) to a modified version of Pseudomonas exotoxin A (PE38KDEL) and was expressed in Escherichia coli AD494 (DE3). The expression level of the fusion protein was about 30% of the total bacterial protein assessed by SDS-PAGE analysis. After purification by affinity chromatography and anion exchange chromatography, the chimeric protein was tested for its cytotoxicity. Our data show that cpIL-4(13D)-PE38KDEL has improved cytotoxicity on IL-4R-bearing tumor cells in comparison with other IL-4-fusing immunotoxins and might be useful in treating tumors with a large number of IL-4Rs.

To observe the effect of Shuangcao Tuihuang Granule-1 (SCTH-1) in treating severe jaundice of acute icterohepatitis and to study its mechanism.Thirty-four patients with severe jaundice of acute icterohepatitis were treated with SCTH-1, their therapeutic effects were analyzed. In the experimental studies, the influences of SCTH-1 on acute liver injury, liver superoxide dismutase (SOD) and serum ALT and AST were monitored.The markedly effective rate and effective rate of the treated group were 73.5% and 23.5% respectively. The markedly effective rate of the treated group was obviously higher than that of the control group (P0.05). Experimental study revealed that SCTH-1 could reduce the level of serum transaminase and inflammation of liver tissue in mice with acute liver damage. In addition, SCTH-1 could raise the activity of liver SOD (P0.05).SCTH-1 could accelerate the jaundice subsidence, improve the liver function and ameliorate the liver injury, its mechanism was possibly correlated with raising SOD activity, scavenging the oxygen free radicals.