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Despite constituting a smaller fraction of the qubits electromagnetic mode, surfaces and interfaces can exert significant influence as sources of high-loss tangents, which brings forward the need to reveal properties of these extended defects and identify routes to their control. Here, we examine the structure and composition of the metal-substrate interfacial layer that exists in Ta/sapphire-based superconducting films. Synchrotron-based X-ray reflectivity measurements of Ta films, commonly used in these qubits, reveal an unexplored interface layer at the metal-substrate interface. Scanning transmission electron microscopy and core-level electron energy loss spectroscopy identified an approximately 0.65 \ \text{nm} \pm 0.05 \ \text{nm} thick intermixing layer at the metal-substrate interface containing Al, O, and Ta atoms. Density functional theory (DFT) modeling reveals that the structure and properties of the Ta/sapphire heterojunctions are determined by the oxygen content on the sapphire surface prior to Ta deposition, as discussed for the limiting cases of Ta films on the O-rich versus Al-rich Al2O3 (0001) surface. By using a multimodal approach, integrating various material characterization techniques and DFT modeling, we have gained deeper insights into the interface layer between the metal and substrate. This intermixing at the metal-substrate interface influences their thermodynamic stability and electronic behavior, which may affect qubit performance.

Artificial Neural Networks (ANNs) are one of the most widely employed forms of bio-inspired computation. However the current trend is for ANNs to be structurally homogeneous. Furthermore, this structural homogeneity requires the application of complex training and learning tools that produce application specific ANNs, susceptible to pitfalls such as overfitting. In this paper, an new approach is explored, inspired by the role played in biology by Neural Microcircuits, the so called ``fundamental processing elements'' of organic nervous systems. How large neural networks, particularly Spiking Neural Networks (SNNs) can be assembled using Artificial Neural Microcircuits (ANMs), intended as off-the-shelf components, is articulated; the results of initial work to produce a catalogue of such Microcircuits though the use of Novelty Search is shown; followed by efforts to expand upon this initial work, including a discussion of challenges uncovered during these efforts and explorations of methods by which they might be overcome., Comment: 12 pages, 31 figures, 3 tables, submitted to A-Life Journal for review

Teaching proofs is a crucial component of any undergraduate-level program that covers formal reasoning. We have developed a calculational reasoning format and refined it over several years of teaching a freshman-level course, "Logic and Computation", to thousands of undergraduate students. In our companion paper, we presented our calculational proof format, gave an overview of the calculational proof checker (CPC) tool that we developed to help users write and validate proofs, described some of the technical and implementation details of CPC and provided several publicly available proofs written using our format. In this paper, we dive deeper into the implementation details of CPC, highlighting how proof validation works, which helps us argue that our proof checking process is sound., Comment: In Proceedings ACL2-2023, arXiv:2311.08373

Scaling up superconducting quantum circuits based on transmon qubits necessitates substantial enhancements in qubit coherence time. Among the materials considered for transmon qubits, tantalum (Ta) has emerged as a promising candidate, surpassing conventional counterparts in terms of coherence time. However, the presence of an amorphous surface Ta oxide layer introduces dielectric loss, ultimately placing a limit on the coherence time. In this study, we present a novel approach for suppressing the formation of tantalum oxide using an ultrathin magnesium (Mg) capping layer deposited on top of tantalum. Synchrotron-based X-ray photoelectron spectroscopy (XPS) studies demonstrate that oxide is confined to an extremely thin region directly beneath the Mg/Ta interface. Additionally, we demonstrate that the superconducting properties of thin Ta films are improved following the Mg capping, exhibiting sharper and higher-temperature transitions to superconductive and magnetically ordered states. Based on the experimental data and computational modeling, we establish an atomic-scale mechanistic understanding of the role of the capping layer in protecting Ta from oxidation. This work provides valuable insights into the formation mechanism and functionality of surface tantalum oxide, as well as a new materials design principle with the potential to reduce dielectric loss in superconducting quantum materials. Ultimately, our findings pave the way for the realization of large-scale, high-performance quantum computing systems.

Teaching college students how to write rigorous proofs is a critical objective in courses that introduce formal reasoning. Over the course of several years, we have developed a mechanically-checkable style of calculational reasoning that we used to teach over a thousand freshman-level undergraduate students how to reason about computation in our "Logic and Computation" class at Northeastern University. We were inspired by Dijkstra, who advocated the use of calculational proofs, writing "calculational proofs are almost always more effective than all informal alternatives, ..., the design of calculational proofs seems much more teachable than the elusive art of discovering an informal proof." Our calculational proof checker is integrated into ACL2s and is available as an Eclipse IDE plugin, via a Web interface, and as a stand-alone tool. It automatically checks proofs for correctness and provides useful feedback. We describe the architecture of the checker, its proof format, its underlying algorithms, its correctness and provide examples using proofs from our undergraduate class and from Dijkstra. We also describe our experiences using the proof checker to teach undergraduates how to formally reason about computation.

Almost all Computer Science programs require students to take a course on the Theory of Computation (ToC) which covers various models of computation such as finite automata, push-down automata and Turing machines. ToC courses tend to give assignments that require paper-and-pencil solutions. Grading such assignments takes time, so students typically receive feedback for their solutions more than a week after they complete them. We present the Automatic Automata Checker (A2C), an open source library that enables one to construct executable automata using definitions that mimic those found in standard textbooks. Such constructions are easy to reason about using semantic equivalence checks, properties and test cases. Instructors can conveniently specify solutions in the form of their own constructions. A2C can check for semantic equivalence between student and instructor solutions and can immediately generate actionable feedback, which helps students better understand the material. A2C can be downloaded and used locally by students as well as integrated into Learning Management Systems (LMS) like Gradescope to automatically grade student submissions and generate feedback. A2C is based on the ACL2s interactive theorem prover, which provides advanced methods for stating, proving and disproving properties. Since feedback is automatic, A2C can be deployed at scale and integrated into massively open online courses., Comment: In Proceedings ThEdu'22, arXiv:2303.05360

Over the past decades, superconducting qubits have emerged as one of the leading hardware platforms for realizing a quantum processor. Consequently, researchers have made significant effort to understand the loss channels that limit the coherence times of superconducting qubits. A major source of loss has been attributed to two level systems that are present at the material interfaces. We recently showed that replacing the metal in the capacitor of a transmon with tantalum yields record relaxation and coherence times for superconducting qubits, motivating a detailed study of the tantalum surface. In this work, we study the chemical profile of the surface of tantalum films grown on c-plane sapphire using variable energy X-ray photoelectron spectroscopy (VEXPS). We identify the different oxidation states of tantalum that are present in the native oxide resulting from exposure to air, and we measure their distribution through the depth of the film. Furthermore, we show how the volume and depth distribution of these tantalum oxidation states can be altered by various chemical treatments. By correlating these measurements with detailed measurements of quantum devices, we can improve our understanding of the microscopic device losses.

ACL2 provides a systems programming capability that allows one to write code that uses and extends ACL2 inside of ACL2. However, for soundness reasons, ACL2 bars the unrestricted use of certain kinds of programming constructs, like destructive updates, higher-order functions, eval, and arbitrary macros. We devised a methodology for writing code in Common Lisp that allows one to access ACL2, ACL2s, and Common Lisp functionality in a unified way. We arrived at this methodology in the process of developing the ACL2 Sedan (ACL2s) and using it as a key component in formal-methods-enabled projects relating to gamified verification, education, proof checking, interfacing with external theorem provers and security. The methodology includes a library for performing ACL2 queries from Common Lisp, as well as guidelines and utilities that help address common needs. We call this methodology "ACL2s systems programming," to distinguish it from ACL2 systems programming. We show how our methodology makes it possible to easily develop tools that interface with ACL2 and ACL2s, and describe our experience using it in our research., Comment: In Proceedings ACL2 2022, arXiv:2205.11103

We describe the design and implementation of a reasoning engine that facilitates the gamification of loop-invariant discovery. Our reasoning engine enables students, computational agents and regular software engineers with no formal methods expertise to collaboratively prove interesting theorems about simple programs using browser-based, online games. Within an hour, players are able to specify and verify properties of programs that are beyond the capabilities of fully-automated tools. The hour limit includes the time for setting up the system, completing a short tutorial explaining game play and reasoning about simple imperative programs. Players are never required to understand formal proofs; they only provide insights by proposing invariants. The reasoning engine is responsible for managing and evaluating the proposed invariants, as well as generating actionable feedback.

The high-mobility conducting interface (CI) between LaAlO_{3}(LAO) and SrTiO_{3}(STO) has revealed many fascinating phenomena, including exotic magnetism and superconductivity. But, the formation mechanism of the CI has not been conclusively explained. Here, using in situ angle-resolved photoemission spectroscopy, we elucidated the mechanisms for the CI formation. In as-grown samples, we observed a built-in potential (V_{bi}) proportional to the polar LAO thickness starting from the first unit cell (UC) with CI formation appearing above 3 UCs. However, we found that the V bi is removed by synchrotron ultraviolet (UV)-irradiation; The built-in potential is recovered by oxygen gas (O_{2}(g))-exposure. Furthermore, after UV-irradiation, the CI appears even below 3UC of LAO. Our results demonstrate not only the V_{bi}-driven CI formation in asgrown LAO/STO, but also a new route to control of the interface state by UV lithographic patterning or other surface modification., Comment: 18 pages, 4 figures

Two-dimensional electron gases (2DEGs) on the SrTiO3 (STO) surface or in STO-based heterostructures have exhibited many intriguing phenomena, which are strongly dependent on the 2DEG-carrier density. We report that the tunability of the 2DEG-carrier density is significantly enhanced by adding a monolayer LaTiO3 (LTO) onto the STO. Ultraviolet (UV) irradiation induced maximum carrier density of the 2DEG in LTO/STO is increased by a factor of ~4 times, compared to that of the bare STO. By oxygen gas exposure, it becomes 10 times smaller than that of the bare STO. This enhanced tunability is attributed to the drastic surface property change of a polar LTO layer by UV irradiation and O2 exposure. This indicates that the 2DEG controllability in LTO/STO is more reliable than that on the bare STO driven by defects, such an oxygen vacancy., Comment: 19 pages, 4 figures

We investigate the atomic-scale tunneling characteristics of bilayer graphene on silicon carbide using the scanning tunneling microscopy. The high-resolution tunneling spectroscopy reveals an unexpected negative differential resistance (NDR) at the Dirac energy, which spatially varies within the single unit cell of bilayer graphene. The origin of NDR is explained by two near-gap van Hove singularities emerging in the electronic spectrum of bilayer graphene under a transverse electric field, which are strongly localized on two sublattices in different layers. Furthermore, defects near the tunneling contact are found to strongly impact on NDR through the electron interference. Our result provides an atomic-level understanding of quantum tunneling in bilayer graphene, and constitutes a useful step towards graphene-based tunneling devices., Comment: 6 pages, 5 figures, accepted for publication in Physical Review Letters

Interest in the use of graphene in electronic devices has motivated an explosion in the study of this remarkable material. The simple, linear Dirac cone band structure offers a unique possibility to investigate its finer details by angle-resolved photoelectron spectroscopy (ARPES). Indeed, ARPES has been performed on graphene grown on metal substrates but electronic applications require an insulating substrate. Epitaxial graphene grown by the thermal decomposition of silicon carbide (SiC) is an ideal candidate for this due to the large scale, uniform graphene layers produced. The experimental spectral function of epitaxial graphene on SiC has been extensively studied. However, until now the cause of an anisotropy in the spectral width of the Fermi surface has not been determined. In the current work we show, by comparison of the spectral function to a semi-empirical model, that the anisotropy is due to small scale rotational disorder ($\sim\pm$ 0.15$^{\circ}$) of graphene domains in graphene grown on SiC(0001) samples. In addition to the direct benefit in the understanding of graphene's electronic structure this work suggests a mechanism to explain similar variations in related ARPES data., Comment: 5 pages, 4 figures

Pristine, single-crystalline graphene displays a unique collection of remarkable electronic properties that arise from its two-dimensional, honeycomb structure. Using in-situ low-energy electron microscopy, we show that when deposited on the (111) surface of Au carbon forms such a structure. The resulting monolayer, epitaxial film is formed by the coalescence of dendritic graphene islands that nucleate at a high density. Over 95% of these islands can be identically aligned with respect to each other and to the Au substrate. Remarkably, the dominant island orientation is not the better lattice-matched 30^{\circ} rotated orientation but instead one in which the graphene [01] and Au [011] in-plane directions are parallel. The epitaxial graphene film is only weakly coupled to the Au surface, which maintains its reconstruction under the slightly p-type doped graphene. The linear electronic dispersion characteristic of free-standing graphene is retained regardless of orientation. That a weakly interacting, non-lattice matched substrate is able to lock graphene into a particular orientation is surprising. This ability, however, makes Au(111) a promising substrate for the growth of single crystalline graphene films.

The electronic structure of graphene on Cu(111) and Cu(100) single crystals is investigated using low energy electron microscopy, low energy electron diffraction and angle resolved photoemission spectroscopy. On both substrates the graphene is rotationally disordered and interactions between the graphene and substrate lead to a shift in the Dirac crossing of $\sim$ -0.3 eV and the opening of a $\sim$ 250 meV gap. Exposure of the samples to air resulted in intercalation of oxygen under the graphene on Cu(100), which formed a ($\sqrt{2} \times 2\sqrt{2}$)R45$^{\rm o}$ superstructure. The effect of this intercalation on the graphene $\pi$ bands is to increase the offset of the Dirac crossing ($\sim$ -0.6 eV) and enlarge the gap ($\sim$ 350 meV). No such effect is observed for the graphene on Cu(111) sample, with the surface state at $\Gamma$ not showing the gap associated with a surface superstructure. The graphene film is found to protect the surface state from air exposure, with no change in the effective mass observed.

Electron-plasmon coupling in graphene has recently been shown to give rise to a "plasmaron" quasiparticle excitation. The strength of this coupling has been predicted to depend on the effective screening, which in turn is expected to depend on the dielectric environment of the graphene sheet. Here we compare the strength of enviromental screening for graphene on four different substrates by evaluating the separation of the plasmaron bands from the hole bands using Angle Resolved PhotoEmission Spectroscopy. Comparison with G0W-RPA predictions are used to determine the effective dielectric constant of the underlying substrate layer. We also show that plasmaron and electronic properties of graphene can be independently manipulated, an important aspect of a possible use in "plasmaronic" devices.

We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent bond with graphene, but rather saturate the substrate Si bonds. This configuration of the fluorine atoms induces a remarkably large hole density of p \approx 4.5 \times 1013 cm-2, equivalent to the location of the Fermi level at 0.79 eV above the Dirac point ED ., Comment: 4 pages, 2 figures, in print APL