98 results on '"Waltl, M."'
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2. Reliability Assessment of Double-Gated Wafer-Scale MoS2 Field Effect Transistors through Hysteresis and Bias Temperature Instability Analyses
3. Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF2 insulators.
4. Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO2Transistors
5. Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs
6. Comphy — A compact-physics framework for unified modeling of BTI
7. A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability
8. A Comprehensive Cryogenic CMOS Variability and Reliability Assessment using Transistor Arrays
9. The defect-centric perspective of device and circuit reliability—From gate oxide defects to circuits
10. Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO2Transistors
11. Impact of Single Defects on NBTI and PBTI Recovery in SiO2 Transistors
12. The Importance of Secondary Generated Carriers in Modeling of Full Bias Space
13. Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors
14. Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS
15. Highly-stable black phosphorus field-effect transistors with low density of oxide traps
16. On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors
17. CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States
18. Distribution of Step Heights of Electron and Hole Traps in SiON nMOS Transistors
19. Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures
20. The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release
21. Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures
22. First–Principles Parameter–Free Modeling of n– and p–FET Hot–Carrier Degradation
23. Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs
24. Statistical Characterization of BTI and RTN using Integrated pMOS Arrays
25. Minimum Energy Paths for Non-Adiabatic Charge Transitions in Oxide Defects
26. Evaluation of Advanced MOSFET Threshold Voltage Drift Measurement Techniques
27. Annealing and Encapsulation of CVD-MoS2 FETs with 1010On/Off Current Ratio
28. Reliability of next-generation field-effect transistors with transition metal dichalcogenides
29. Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors
30. Superior NBTI in High- $k$ SiGe Transistors–Part I: Experimental
31. Superior NBTI in High-k SiGe Transistors–Part II: Theory
32. Reliability of black phosphorus field-effect transistors with respect to bias-temperature and hot-carrier stress
33. The impact of mixed negative bias temperature instability and hot carrier stress on single oxide defects
34. Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress
35. Characterization and modeling of single defects in GaN/AlGaN fin-MIS-HEMTs
36. Efficient physical defect model applied to PBTI in high-κ stacks
37. Accurate mapping of oxide traps in highly-stable black phosphorus FETs
38. Complete extraction of defect bands responsible for instabilities in n and pFinFETs
39. A systematic study of charge trapping in single-layer double-gated GFETs
40. The “permanent” component of NBTI revisited: Saturation, degradation-reversal, and annealing
41. Reliability of single-layer MoS2 field-effect transistors with SiO2 and hBN gate insulators
42. Nanoscale evidence for the superior reliability of SiGe high-k pMOSFETs
43. Gate-sided hydrogen release as the origin of "permanent" NBTI degradation: From single defects to lifetimes
44. Back Gate Bias-Temperature Instability in Single-Layer Double-Gated Graphene Field-Effect Transistors
45. Microscopic oxide defects causing BTI, RTN, and SILC on high-k FinFETs
46. On the volatility of oxide defects: Activation, deactivation, and transformation
47. Hot-carrier degradation in single-layer double-gated graphene field-effect transistors
48. Impact of hot carrier stress on the defect density and mobility in double-gated graphene field-effect transistors
49. On the microscopic structure of hole traps in pMOSFETs
50. Advanced modeling of charge trapping: RTN, 1/f noise, SILC, and BTI
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