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In this paper, we report remarkable room-temperature magnetoresistance (MR) in silicon strip devices. Saturating and non-saturating MRs can be realized based on the measuring configurations with one top contact and ten top contacts, respectively. Using the one-top-contact measurement, a saturating MR ratio of ∼400% is obtained at an applied voltage of only 1.0 V when the magnetic field is larger than 0.8 T. While the non-saturating MR is achieved in the ten-top-contact measurement and the MR ratio is only ∼155% for the 1.0 V applied voltage even under the magnetic field of 1.2 T. The differences for MR ratio values and change trends in these two measuring configurations are attributed to the enhanced Hall electric field with the increase of the top contact number. [ABSTRACT FROM AUTHOR]

It is challenging to design a photocatalyst with high-efficiency light absorption, charge separation and even high-efficiency charge transfer. Here, we report a demonstration by utilizing a three-dimensional multilayered core-shell nanowire array (rGO-ITO@BiVO 4 ) as the composite photocatalyst. The core-shell structure can shorten the length of charge transfer and enhance light absorption through multireflection. RGO with defects can work as the charge transfer medium to improve the hole injection from semiconductor to electrolyte. Associated with the above effects, the Co-pi electrocatalyst modified rGO-ITO@BiVO 4 photocatalyst yields a photocurrent of about 6.0 mA cm -2 at 0.6 V vs. Ag/AgCl. Transient-state surface photovoltage measurement shows that the rGO layer can prolong the lifetime of the photogenerated holes through π-π interactions, so that more holes can participate in the water oxidation reaction.