1. Self-controlled growth of highly uniform Ge/Si hut wires for scalable qubit devices
- Author
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Gao, Fei, Wang, Jian-Huan, Watzinger, Hannes, Hu, Hao, Rančić, Marko J., Zhang, Jie-Yin, Wang, Ting, Yao, Yuan, Wang, Gui-Lei, Kukučka, Josip, Vukušić, Lada, Kloeffel, Christoph, Loss, Daniel, Liu, Feng, Katsaros, Georgios, and Zhang, Jian-Jun
- Subjects
Condensed Matter - Mesoscale and Nanoscale Physics - Abstract
Semiconductor nanowires have been playing a crucial role in the development of nanoscale devices for the realization of spin qubits, Majorana fermions, single photon emitters, nanoprocessors, etc. The monolithic growth of site-controlled nanowires is a prerequisite towards the next generation of devices that will require addressability and scalability. Here, combining top-down nanofabrication and bottom-up self-assembly, we report on the growth of Ge wires on pre-patterned Si (001) substrates with controllable position, distance, length and structure. This is achieved by a novel growth process which uses a SiGe strain-relaxation template and can be generalized to other material combinations. Transport measurements show an electrically tunable spin-orbit coupling, with a spin-orbit length similar to that of III-V materials. Also, capacitive coupling between closely spaced wires is observed, which underlines their potential as a host for implementing two qubit gates. The reported results open a path towards scalable qubit devices with Si compatibility.
- Published
- 2020
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