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495 results on '"Wang, Xingsheng"'

1. iPREFER: An Intelligent Parameter Extractor based on Features for BSIM-CMG Models

Author

Peng, Zhiliang, Wang, Yicheng, Yuan, Zhengwu, and Wang, Xingsheng

Subjects
Electrical Engineering and Systems Science - Systems and Control
Abstract

This paper introduces an innovative parameter extraction method for BSIM-CMG compact models, seamlessly integrating curve feature extraction and machine learning techniques. This method offers a promising solution for bridging the division between TCAD and compact model, significantly contributing to the Design Technology Co-Optimization (DTCO) process. The key innovation lies in the development of an automated IV and CV curve feature extractor, which not only streamlines the analysis of device IV and CV curves but also enhances the consistency and efficiency of data processing. Validation on 5-nm nanosheet devices underscores the extractor's remarkable precision, with impressively low fitting errors of 0.42% for CV curves and 1.28% for IV curves. Furthermore, its adaptability to parameter variations, including those in Equivalent Oxide Thickness and Gate Length, solidifies its potential to revolutionize the TCAD-to-compact model transition. This universal BSIM-CMG model parameter extractor promises to improve the DTCO process, offering efficient process optimization and accurate simulations for semiconductor device performance prediction., Comment: 6 pages

Published
2024

3. Analysis on the Influence Factors of Bulk Temperature of the Meshing Gear of a Nutation Drive with a Double Circular-arc Spiral Bevel Gear

Author

Chen Ying, Yao Ligang, Wang Xingsheng, Zhang Dawei, and Wang Xueying

Subjects
Double circular-arc spiral bevel gear, Nutation drive, Bulk temperature, Influence factor, Mechanical engineering and machinery, TJ1-1570
Abstract

The meshing temperature affects the fatigue, vibration, noise and other behaviors in the nutation transmission process of the double circular-arc spiral bevel gear, which cannot be ignored in the life prediction and mechanical response of the double circular-arc spiral bevel gear. In order to reveal the temperature field distribution law of the nutation drive of the double circular-arc spiral bevel gear, the meshing area is obtained by tooth contact analysis of the double circular-arc spiral bevel gear, the thermal load of the gear is obtained by combining tribology and heat transfer, the finite element numerical model of the temperature of the double circular-arc spiral bevel gear is established, and the influence law and reasons of the relevant influencing factors on the bevel gear temperature are analyzed by using the control variable method. The results show that the gear temperature decreases with the increase of modulus, increases with the increase of the spiral angle, and decreases first and then increases with the increase of the nutation angle; the influence of the lubricating oil temperature on the bulk temperature is linear. The research provides reference for reducing the risk of gear failure at high temperatures.

Published
2024
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6. Ferroelectricity in $\mathrm{HfO_2}$ from a chemical perspective

Author

Yuan, Jun-Hui, Mao, Ge-Qi, Xue, Kan-Hao, Bai, Na, Wang, Chengxu, Cheng, Yan, Lyu, Hangbing, Sun, Huajun, Wang, Xingsheng, and Miao, Xiangshui

Subjects
Condensed Matter - Materials Science
Abstract

Ferroelectricity observed in thin film $\mathrm{HfO_2}$, either doped with Si, Al, etc. or in the $\mathrm{Hf_{0.5}Zr_{0.5}O_2}$ form, has gained great technical significance. However, the soft mode theory faces a difficulty in explaining the origin of such ferroelectricity. In this work, we propose that the 7 cation coordination number of $\mathrm{HfO_2/ZrO_2}$ lies at the heart of this ferroelectricity, which stems from the proper ionic radii of Hf/Zr compared with O. Among the numerous compounds with non-centrosymmetric nature, e.g., $mm2$ point group, $\mathrm{HfO_2}$ and $\mathrm{ZrO_2}$ are special in that they are close to the border of 7 and 8 cation coordination, such that the 8-coordination tetragonal intermediate phase could greatly reduce the switching barrier. Other 7-coordination candidates, including $\mathrm{SrI_2}$, TaON, YSBr and YOF are also studied in comparison to $\mathrm{HfO_2}$/$\mathrm{ZrO_2}$, and six switching paths are analyzed in detail for the $Pca2_1$ phase. A rule of preferred switching path in terms of ionic radii ratio and coordination number has been established. We also show the possible route from ferroelectric $Pca2_1$ phase to monoclinic $P2_1/c$ phase in $\mathrm{HfO_2}$, which is relevant to the fatigue phenomenon., Comment: 14 pages, 4 figures

Published
2022

10. Design and Simulation Analysis of a New Wheel Hub Drive Single-stage Nutating Reducer for Electric Cars

Author

Wang Xingsheng, Yao Ligang, Wang Yali, Zhang Dawei, and Chen Ying

Subjects
Electric car, Wheel hub drive, Nutating transmission, Structural design, Finite element analysis, Mechanical engineering and machinery, TJ1-1570
Abstract

To solve the problems that the conventional planetary gear wheel hub reducer has many parts, large axial dimensions and complicated installation around the wheel system when the vehicle requires a relatively large transmission， and taking the electric car as the research object, this study proposes a new type of wheel hub drive reducers based on single-stage nutating transmission, describes the working principle and transmission process, completes the structural design and transmission efficiency calculation, and establishes the virtual prototype model. The finite element analysis is carried out to discuss the location and cause of the maximum contact stress of the mechanism under a static load. The reliability and rationality of the structure are verified.

Published
2023
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17. A Novel General Compact Model Approach for 7nm Technology Node Circuit Optimization from Device Perspective and Beyond

Author

Huo, Qiang, Wu, Zhenhua, Huang, Weixing, Wang, Xingsheng, Tang, Geyu, Yao, Jiaxin, Liu, Yongpan, Zhang, Feng, Li, Ling, and Liu, Ming

Subjects
Computer Science - Emerging Technologies
Abstract

This work presents a novel general compact model for 7nm technology node devices like FinFETs. As an extension of previous conventional compact model that based on some less accurate elements including one-dimensional Poisson equation for three-dimensional devices and analytical equations for short channel effects, quantum effects and other physical effects, the general compact model combining few TCAD calibrated compact models with statistical methods can eliminate the tedious physical derivations. The general compact model has the advantages of efficient extraction, high accuracy, strong scaling capability and excellent transfer capability. As a demo application, two key design knobs of FinFET and their multiple impacts on RC control ESD power clamp circuit are systematically evaluated with implementation of the newly proposed general compact model, accounting for device design, circuit performance optimization and variation control. The performance of ESD power clamp can be improved extremely. This framework is also suitable for pathfinding researches on 5nm node gate-all-around devices, like nanowire (NW) FETs, nanosheet (NSH) FETs and beyond.

Published
2019

31. Safety and efficacy of three enteral feeding strategies in patients with severe stroke in China (OPENS): a multicentre, prospective, randomised, open-label, blinded-endpoint trial

Author

Jiang, Wen, Yang, Fang, Zhao, Jingjing, Yuan, Fang, Song, Changgeng, Sun, Lili, Zhao, Yuanfang, Wei, Jiangya, Liu, Lijuan, Hu, Mengmeng, Wang, Xuan, Zhang, Jingjing, Shi, Xiaodan, Hui, Bo, Chen, Rong, Ren, Xianhui, Du, Fang, Yin, Rong, Wei, Yaxuan, Li, Yuanming, Chang, Mingze Chang, Zhang, Xiujuan, Yin, Yanling, Zhang, Wei, Guo, Jun, Guo, Peng, Lu, Jiarui, Li, Chuan, Shen, Jinjin, Bai, Miao, Zhang, Min, Zhang, Bei, Zhang, Shijun, Bai, Yulan, Bai, Yanan, Fan, Wenjun, Wang, Lin, Yu, Fangfang, Ru, Yanni, Wei, Wei, Ma, Yaling, Wang, Wenzong, Hu, Ruoruo, Li, Yajuan, Ma, Xuemei, Lv, Tao, Yu, Liping, Zhu, Hao, Yang, Linsong, Wu, Yaxin, Cao, Junxia, Jia, Yi, Wu, Tao, Zhang, Hongxing, Liu, Saibing, Ning, Bo, Song, Chaohui, Zhao, Hongyan, Li, Zhongyi, Zhang, Haiyan, Wang, Mingming, Song, Yongbin, Zhu, Yong, Wang, Chengkai, Chen, Siwen, Ren, Qianmeng, Lu, Shuang, Wang, Xinlai, You, Qiufeng, Liu, Zhiqin, Jiang, Yi, Xiong, Jing, Wang, Xiaocheng, Zhao, Rong, Huo, Kang, Chen, Chen, Qu, Yongcai, Ma, Li, Yang, Xiai, Liu, Yi, Wang, Xingsheng, Chang, Mingze, and Shang, Lei

Published
2022
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39. BEOL Large-Scale Integration and Precise Programming of HfOx/AlOy Superlattice- Like Multilevel Memristors

Author

Huang, Menghua, Jiang, Pinfeng, Wang, Chengxu, Wang, Meiqing, Ma, Yinghao, Gan, Zhouchao, Yang, Yifan, Miao, Xiangshui, and Wang, Xingsheng

Abstract

The memristor is a promising candidate for multilevel memory and neuromorphic computing. This study successfully integrated HfOx/AlOy superlattice-like (SLL) memristors in the 0.18/ $0.5~\mu $ m CMOS back-end-of-line (BEOL) process and statistically analyzed their performance. We identified that BEOL annealing ( $400~^{\circ }$ C/30 min) can cause oxygen diffusion and short-circuiting, but reducing Ti electrode thickness mitigates this issue. Furthermore, low post-forming resistance is discussed and solved by one transistor one memristor (1T1M) structure. Finally, we fabricate a 1T1M crossbar array with a size of 1 Kb in the $0.18~\mu $ m CMOS process. We demonstrated the multilevel characteristics and endurance of 1T1M. Furthermore, the stable and precise multilevel conductance programming of memristors is achieved by a specific writing method and we simulated the effect of conductance of failure bits on classification accuracy in a four-layer MLP network on the MNIST dataset.

Published
2024
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