Search

Your search keyword '"Wang, Zhenze"' showing total 131 results
Start Over Author "Wang, Zhenze"
131 results on '"Wang, Zhenze"'

2. Landauer-QFLPS model for mixed Schottky-Ohmic contact two-dimensional transistors

Author

Yan, Zhao-Yi, Hou, Zhan, Xue, Kan-Hao, Lu, Tian, Zhao, Ruiting, Xue, Junying, Wu, Fan, Shao, Minghao, Yan, Jianlan, Yan, Anzhi, Wang, Zhenze, Shen, Penghui, Zhao, Mingyue, Miao, Xiangshui, Lin, Zhaoyang, Liu, Houfang, Tian, He, Yang, Yi, and Ren, Tian-Ling

Subjects
Physics - Applied Physics, Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

Two-dimensional material-based field effect transistors (2DM-FETs) are playing a revolutionary role in electronic devices. However, after years of development, no device model can match the Pao-Sah model for standard silicon-based transistors in terms of physical accuracy and computational efficiency to support large-scale integrated circuit design. One remaining critical obstacle is the contacts of 2DM-FETs. In order to self-consistently include the contact effect in the current model, it is necessary to perform self-consistent calculations, which is a fatal flaw for applications that prioritize efficiency. Here, we report that the Landauer-QFLPS model effectively overcomes the above contradiction, where QFLPS means quasi-Fermi-level phase space theory. By connecting the physical pictures of the contact and the intrinsic channel part, we have successfully derived a drain-source current formula including the contact effect. To verify the model, we prepared transistors based on two typical 2DMs, black phosphorus (BP) and molybdenum disulfide (MoS2), the former having ambipolar transport and the latter showing electron-dominant unipolar transport. The proposed new formula could describe both 2DM-FETs with Schottky or Ohmic contacts. Moreover, compared with traditional methods, the proposed model has the advantages of accuracy and efficiency, especially in describing non-monotonic drain conductance characteristics, because the contact effect is self-consistently and compactly packaged as an exponential term. More importantly, we also examined the model at the circuit level. Here, we fabricated a three-bit threshold inverter quantizer circuit based on ambipolar-BP process and experimentally demonstrated that the model can accurately predict the circuit performance. This industry-benign 2DM-FET model is supposed to be very useful for the development of 2DM-FET-based integrated circuits.

Published
2023

3. An efficient model algorithm for two-dimensional field-effect transistors

Author

Yan, Zhao-Yi, Hou, Zhan, Wu, Fan, Zhao, Ruiting, Yan, Jianlan, Yan, Anzhi, Wang, Zhenze, Xue, Kan-Hao, Liu, Houfang, Tian, He, Yang, Yi, and Ren, Tian-Ling

Subjects
Condensed Matter - Materials Science
Abstract

Two-dimensional materials-based field-effect transistors (2DM-FETs) exhibit both ambipolar and unipolar transport types. To physically and compactly cover both cases, we put forward a quasi-Fermi-level phase space (QFLPS) approach to model the ambipolar effect in our previous work. This work aims to further improve the QFLPS model's numerical aspect so that the model can be implanted into the standard circuit simulator. We first rigorously derive the integral-free formula for the drain-source current to achieve this goal. It is more friendly to computation than the integral form. Besides, it explicitly gives the correlation terms between the electron and hole components. Secondly, to work out the boundary values required by the new expressions, we develop a fast evaluation algorithm for the surface electrostatic potential based on the zero-temperature limit property of the 2DM-FET system. By calibrating the model with the realistic device data of black phosphorus (BP) and monolayer molybdenum disulfide (ML-MoS2) FETs, the completed algorithm is tested against practical cases. The results show a typical superiority to the benchmark algorithm by two orders of magnitude in time consumption can be achieved while keeping a high accuracy with 7 to 9 significant digits., Comment: 17 pages, 9 figures

Published
2023

14. Landauer‐QFLPS Model for Mixed Schottky‐Ohmic Contact Two‐Dimensional Transistors (Adv. Sci. 34/2023)

Author

Yan, Zhao‐Yi, primary, Hou, Zhan, additional, Xue, Kan‐Hao, additional, Tian, He, additional, Lu, Tian, additional, Xue, Junying, additional, Wu, Fan, additional, Zhao, Ruiting, additional, Shao, Minghao, additional, Yan, Jianlan, additional, Yan, Anzhi, additional, Wang, Zhenze, additional, Shen, Penghui, additional, Zhao, Mingyue, additional, Miao, Xiangshui, additional, Lin, Zhaoyang, additional, Liu, Houfang, additional, Yang, Yi, additional, and Ren, Tian‐Ling, additional

Published
2023
Full Text
View/download PDF

16. Thin‐Film Transistors for Integrated Circuits: Fundamentals and Recent Progress

Author

Yan, Anzhi, primary, Wang, Chunlin, additional, Yan, Jianlan, additional, Wang, Zhenze, additional, Zhang, Enyi, additional, Dong, Yu, additional, Yan, Zhao‐Yi, additional, Lu, Tian, additional, Cui, Tianrui, additional, Li, Ding, additional, Shen, Penghui, additional, Jin, Yuxin, additional, Liu, Houfang, additional, Yang, Yi, additional, and Ren, Tian‐Ling, additional

Published
2023
Full Text
View/download PDF

20. Thin‐Film Transistors for Integrated Circuits: Fundamentals and Recent Progress.

Author

Yan, Anzhi, Wang, Chunlin, Yan, Jianlan, Wang, Zhenze, Zhang, Enyi, Dong, Yu, Yan, Zhao‐Yi, Lu, Tian, Cui, Tianrui, Li, Ding, Shen, Penghui, Jin, Yuxin, Liu, Houfang, Yang, Yi, and Ren, Tian‐Ling

Subjects
TRANSISTOR circuits, INTEGRATED circuits, HYDROGENATED amorphous silicon, AMORPHOUS semiconductors, POLYCRYSTALLINE silicon, THIN film transistors, COMPLEMENTARY metal oxide semiconductors
Abstract

High‐performance thin‐film transistors (TFTs) integrated circuits (ICs) have become increasingly necessary to meet the emerging demands such as healthcare, edge computing, and the Internet of Things, etc. This article aims to point out the potential development trends and bottlenecks of TFT ICs, enhancing their performance in terms of electronic performance, stability, consistency, CMOS design, and manufacturing capability. Basic device structures and overall metrics of TFT ICs are explored, as well as their superiority compared to silicon‐based ultrathin chips. Hydrogenated amorphous silicon, low‐temperature polycrystalline silicon, and amorphous oxide semiconductors are widely used in displays due to their ability to be deposited on large areas at low processing temperatures and low cost, and are validated in many prototypes for TFT ICs. Their conduction mechanisms, process flows, performance evaluation, and recent advances are comprehensively viewed. In addition, the potential of emerging low‐dimensional materials as next‐generation channel materials is discussed, along with their limitations and progress in this field. Finally, the major challenges in manufacturing high‐performance TFT ICs and future perspectives are summarized. [ABSTRACT FROM AUTHOR]

Published
2024
Full Text
View/download PDF

21. Stent graft coverage of dual-stent strategy in the management of abdominal aortic aneurysms

Author

Yuan Ding, Li Zhongyou, Jiang Wentao, Zhang Yinci, Wang Zhenze, and Chen Yu

Subjects
Thoracoabdominal Aortic Aneurysm, SG Coverage, Multilayer Stent (MS), Blood Vessel Branches, Dual Stent, Medicine, Science
Abstract

Abstract Treating an abdominal aortic aneurysm (AAA) with a stent graft (SG) and a multilayer stent (MS) is a key technology in isolating flow fields. Clinically, dual stents (an SG in the proximal and an MS in the distal of AAA) are used for treatment of AAA, but only a few studies have examined the relationship between SG coverage and treatment effects. Through numerical simulation of the hemodynamics after SG and MS implantation, the SG coverage and position were simulated at 0% (0 mm), 25% (13.75 mm), 50% (27.5 mm), and 75% (41.25 mm). With increasing SG coverage, the pressure on the aneurysm sac wall and the flow of branch vessels gradually decreased, and the lower wall shear stress (WSS) gradually increased. The changes in pressure, lower WSS, and the mass flow rate of the branch vessels did not change significantly. The coverage of the SG has a nonsignificant effect on hemodynamics in the treatment of AAA; the implantation position need not be very precise. This research can provide theoretic support for clinicians’ decision-making.

Published
2018
Full Text
View/download PDF

35. Two Different Minimally Invasive Surgery Puncture Points with Thrombolysis in a Patient with Bilateral Basal Ganglia Hemorrhages

Author

Zhang, Dongyong, Yu, Jiefu, Wang, Zhenze, and Wang, Yiwei

Subjects
Case Report, preexisting hypertension, hemorrhage aspiration, puncture points, intracranial hemorrhage, surgical procedure
Abstract

Bilateral basal ganglia hemorrhages are extremely rare and have very poor prognosis. We describe the case of a 52-year-old woman with a history of hypertension who experienced bilateral basal ganglia hemorrhages. We performed bilateral hematoma aspiration by minimally invasive surgery via frontal and temporal puncture points. We discuss the surgical procedure and review relevant literature pertaining to the underlying causes and complications of similar cases.

Published
2020

38. Stent graft coverage of dual-stent strategy in the management of abdominal aortic aneurysms

Author

Li Zhongyou, Yuan Ding, Chen Yu, Wang Zhenze, Zhang Yinci, and Jiang Wentao

Subjects
SG Coverage, medicine.medical_specialty, medicine.medical_treatment, Science, 0206 medical engineering, Blood Vessel Branches, Hemodynamics, 02 engineering and technology, 030204 cardiovascular system & hematology, Thoracoabdominal Aortic Aneurysm, Article, Multilayer stent, 03 medical and health sciences, 0302 clinical medicine, Aneurysm, Internal medicine, Dual Stent, Pressure, medicine, Multilayer Stent (MS), cardiovascular diseases, Multidisciplinary, Interventional cardiology, business.industry, Stent, Models, Theoretical, medicine.disease, 020601 biomedical engineering, Abdominal aortic aneurysm, Treatment Outcome, Hydrodynamics, Cardiology, cardiovascular system, Medicine, Stents, Stress, Mechanical, Shear Strength, business, Software, Aortic Aneurysm, Abdominal
Abstract

Treating an abdominal aortic aneurysm (AAA) with a stent graft (SG) and a multilayer stent (MS) is a key technology in isolating flow fields. Clinically, dual stents (an SG in the proximal and an MS in the distal of AAA) are used for treatment of AAA, but only a few studies have examined the relationship between SG coverage and treatment effects. Through numerical simulation of the hemodynamics after SG and MS implantation, the SG coverage and position were simulated at 0% (0 mm), 25% (13.75 mm), 50% (27.5 mm), and 75% (41.25 mm). With increasing SG coverage, the pressure on the aneurysm sac wall and the flow of branch vessels gradually decreased, and the lower wall shear stress (WSS) gradually increased. The changes in pressure, lower WSS, and the mass flow rate of the branch vessels did not change significantly. The coverage of the SG has a nonsignificant effect on hemodynamics in the treatment of AAA; the implantation position need not be very precise. This research can provide theoretic support for clinicians’ decision-making.

Published
2018

Catalog

Books, media, physical & digital resources
See catalog results