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The interplay between order and disorder is crucial across various fields, especially in understanding oscillatory phenomena. Periodic oscillations are frequently observed in heterogeneous catalysis, yet their underlying mechanisms need deeper exploration. Here, we investigate how periodic oscillations arise during methane oxidation catalysed by palladium nanoparticles (Pd NPs), utilizing a suite of complementary operando techniques across various spatial scales. We found that reaction intensity and collective dynamic modes can be tuned by the reactant gas-flow rate. At lower gas-flow rates, we observed periodic facet reconstruction of Pd NPs correlated with repeated bubbling behaviour at the Pd/PdO interface, without evident global oscillatory responses. Conversely, at higher gas-flow rates, Pd NPs undergo chaotic transformations between metallic and oxidized states, resulting in overall oscillation. Integrating our observations at different gas-flow rates, we attributed the emergence of global oscillation to thermal coupling regulated by gas flow and connected local and global dynamics through a weak synchronization mechanism. This work demonstrates the correlations between open surfaces and interfaces, chaos and regularity, and dissipative processes and coupling behaviour. Our findings offer critical insights into the complexity behind catalytic oscillations and provide guidance for modulating oscillatory behaviours in catalytic processes, with significant implications for both science and industry.

Additive microfabrication processes based on localized electroplating enable the one-step deposition of micro-scale metal structures with outstanding performance, e.g. high electrical conductivity and mechanical strength. They are therefore evaluated as an exciting and enabling addition to the existing repertoire of microfabrication technologies. Yet, electrochemical processes are generally restricted to conductive or semiconductive substrates, precluding their application in the manufacturing of functional electric devices where direct deposition onto insulators is often required. Here, we demonstrate the direct, localized electrodeposition of copper on a variety of insulating substrates, namely Al2O3, glass and flexible polyethylene, enabled by electron-beam-induced reduction in a highly confined liquid electrolyte reservoir. The nanometer-size of the electrolyte reservoir, fed by electrohydrodynamic ejection, enables a minimal feature size on the order of 200 nm. The fact that the transient reservoir is established and stabilized by electrohydrodynamic ejection rather than specialized liquid cells could offer greater flexibility towards deposition on arbitrary substrate geometries and materials. Installed in a low-vacuum scanning electron microscope, the setup further allows for operando, nanoscale observation and analysis of the manufacturing process.

Twisted bilayer graphene (TBG) and other quasi-two-dimensional moir\'e superlattices have attracted significant attention due to the emergence of various correlated and topological states associated with the flat bands in these systems. In this work, we theoretically explore the physical properties of a new type of \textit{three dimensional graphite moir\'e superlattice}, the bulk alternating twisted graphite (ATG) system with homogeneous twist angle, which is grown by in situ chemical vapor decomposition method. Compared to TBG, the bulk ATG system is bestowed with an additional wavevector degrees of freedom due to the extra dimensionality. As a result, we find that when the twist angle of bulk ATG is smaller than twice of the magic angle of TBG, there always exist ``magic momenta" at which the in-plane Fermi velocities of the moir\'e bands vanish. Moreover, topologically distinct flat bands of TBG at different magic angles can even co-exist at different out-of-plane wavevectors in a single bulk ATG system. Most saliently, when the twist angle is relatively large, exactly dispersionless three dimensional zeroth Landau level would emerge in the bulk ATG, which may give rise to robust three dimensional quantum Hall effects over a large range of twist angles., Comment: 6 pages + 3 figures in main text, 17 pages + 13 figures in Supplementary Information

Direct growth of large-area vertically stacked two-dimensional (2D) van der Waal (vdW) materials is a prerequisite for their high-end applications in integrated electronics, optoelectronics and photovoltaics. Currently, centimetre- to even metre-scale monolayers of single-crystal graphene (MLG) and hexagonal boron nitride (h-BN) have been achieved by epitaxial growth on various single-crystalline substrates. However, in principle, this success in monolayer epitaxy seems extremely difficult to be replicated to bi- or few-layer growth, as the full coverage of the first layer was believed to terminate the reactivity of those adopting catalytic metal surfaces. Here, we report an exceptional layer-by-layer chemical vapour deposition (CVD) growth of large size bi-layer graphene single-crystals, enabled by self-transmitting catalytic activity from platinum (Pt) surfaces to the outermost graphene layers. In-situ growth and real-time surveillance experiments, under well-controlled environments, unambiguously verify that the growth does follow the layer-by-layer mode on open surfaces of MLG/Pt(111). First-principles calculations indicate that the transmittal of catalytic activity is allowed by an appreciable electronic hybridisation between graphene overlayers and Pt surfaces, enabling catalytic dissociation of hydrocarbons and subsequently direct graphitisation of their radicals on the outermost sp2 carbon surface. This self-transmitting catalytic activity is also proven to be robust for tube-furnace CVD in fabricating single-crystalline graphene bi-, tri- and tetra-layers, as well as h-BN few-layers. Our findings offer an exceptional strategy for potential controllable, layer-by-layer and wafer-scale growth of vertically stacked few-layered 2D single crystals., Comment: 5 figures and 9 extended figures

Atom-layered hexagonal boron nitride (hBN), with excellent stability, flat surface and large bandgap, has been reported to be the best 2D insulator to open up the great possibilities for exciting potential applications in electronics, optoelectronics and photovoltaics. The ability to grow high-quality large single crystals of hBN is at the heart for those applications, but the size of single-crystal 2D BN is less than a millimetre till now. Here, we report the first epitaxial growth of a 10*10 cm2 single-crystal hBN monolayer on a low symmetry Cu(110) "vicinal surface". The growth kinetics, unidirectional alignment and seamless stitching of hBN domains are unambiguously illustrated using centimetre- to the atomic-scale characterization techniques. The findings in this work are expected to significantly boost the massive applications of 2D materials-based devices, and also pave the way for the epitaxial growth of broad non-centrosymmetric 2D materials.