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166 results on '"Wang, Zujun"'

2. Study of the mechanism of single event burnout in lateral depletion-mode Ga2O3 MOSFET devices via TCAD simulation.

Author

Wang, Kejia, Wang, Zujun, Cao, Rongxing, Liu, Hanxun, Chang, Wenjing, Zhao, Lin, Mei, Bo, Lv, He, Zeng, Xianghua, and Xue, Yuxiong

Subjects
*SINGLE event effects, *METAL oxide semiconductor field-effect transistors, *CARRIER density, *ELECTRON density, *COMPUTER-aided design
Abstract

This study investigates the sensitive region and safe operation voltage of single-event burnout (SEB) in lateral depletion-mode Ga2O3 MOSFET devices via technology computer aided design simulation. Based on the distribution of the electric field, carrier concentration, and electron current density when SEB occurs, the radiation damage mechanism of SEB is proposed. The mechanism of SEB in Ga2O3 MOSFET was revealed to be the result of a unique structure without a PN junction within it, which possesses gate control ability and exerts a significant influence on the conduction of the depletion region. [ABSTRACT FROM AUTHOR]

Published
2024
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7. Simulation of irradiation damage in CsPbI3-based perovskite solar cells by energetic protons.

Author

Yin, Liyuan, Wang, Zujun, Wang, Xinghong, Tang, Ning, Yan, Shixing, Li, Chuanzhou, Wan, Lei, Su, Wenhao, Hou, Shenshen, Guo, Yanling, Chen, Lin, and Chen, Ximeng

Subjects
*SOLAR cells, *RADIATION damage, *ENERGY dissipation, *SPACE environment, *ELECTRON transport
Abstract

Perovskite solar cells are emerging as one of the most promising energy sources for space applications. However, the displacement damage of solar cells in the space environment has gradually deteriorated their performance. In this work, the depth distribution of primary knocked-on atoms (PKA), non-ionizing energy loss and defect concentration of CsPbI3-based perovskite solar cells irradiated by 0.1–2000 MeV protons have been simulated by the Geant4 toolkit. It is found that the PKA yield shows an obvious step behavior near the layer boundary of the solar cell, and that the electron and hole transport layers have the high defect concentration whereas the CsPbI3-based perovskite layer owns the least PKA yield. In particular, in the geostationary orbit, the radiation damage effect caused by space protons to the solar cells is approximately equivalent to that irradiated by 0.18 MeV protons, which provides a good reference for ground irradiation experiments for CsPbI3-based perovskite solar cells. [ABSTRACT FROM AUTHOR]

Published
2024
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21. Improving Radiation Reliability of SRAM-Based Physical Unclonable Function With Self-Healing and Pre-Irradiation Masking Techniques

Author

Chen, Zhuojun, Yang, Wenhao, Chen, Jinghang, Wang, Zujun, and Ding, Ding

Abstract

Physical unclonable function (PUF) is an innovative primitive used for key generation and device authentication, which has promising applications for resource-limited scenarios such as satellite communication. However, the reliability of traditional PUF circuits is low and the power consumption is high. Maintaining reliability also requires high costs, which limits its practical application. This article proposes a multimode SRAM PUF based on a 55-nm CMOS process, which has a self-healing feature. By using a voltage tilt preselection mechanism, the unstable PUF cells can be detected and most of them can be healed by mode switching, thereby improving the reliability of the PUF and reducing the costs required for golden key screening tests. However, the total ionizing dose (TID) effect poses a threat to the PUF, which can significantly increase the bit error rate (BER). In this article, the radiation effect of the PUF is characterized and its mechanism is analyzed. Besides, by means of the self-healing and preirradiation temperature and voltage masking techniques, the radiation reliability of the proposed PUF can be improved avoiding traditional destructive testing. The experimental results demonstrate that the BER can be reduced to as low as 0.0183%, which is $345\times $ lower than the raw BER, after irradiation up to 100 krad(Si). The proposed technique presents great potential for communication security in the aerospace environment.

Published
2024
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23. The simulation of electron transport of dielectric materials under high-energy electron storms?

Author

Yin, Liyuan, Wang, Zujun, Wu, Quan, Zhang, Rongliang, Tang, Ning, Mao, Yibin, Ma, Ding, Yan, Shixing, Guo, Yanling, and Chen, Lin

Subjects
*DIELECTRIC materials, *ELECTRONS, *ELECTRON transport, *SOLAR energy, *HIGH voltages, *SPACE charge
Abstract

When the space high-energy electron storm is generated in the Space Solar Power Station, the high voltage biased on the dielectric materials is a key factor affecting the deep charging process. In this work, the electron transport process in poly-ether-ether-ketone flat plates has been studied by the Geant4 simulation. It is found that the trapped charge density enhances 2-3 orders of magnitude under high-energy electron storms and that the trapped charge density gradually increases with the increase of the radiation time. The number of electrons deposited and charge migration decreases as the shielding thickness increases, while the trapped charge density decreases significantly and its spatial distribution gradually changes to a concave distribution. [ABSTRACT FROM AUTHOR]

Published
2024
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24. 核与空间辐射效应模拟试验技术研究

Author

Chen, Wei, primary, Luo, Yinhong, additional, Ma, Wuying, additional, Wang, Chenhui, additional, Ding, Lili, additional, Wang, Zujun, additional, Liu, Yan, additional, Mei, Bo, additional, Yao, Chongbin, additional, Ceng, Chao, additional, Guo, Xiaoqiang, additional, Wang, Zhongming, additional, and Wu, Wei, additional

Published
2023
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28. 不同偏置条件下CMOS图像传感器质子辐照损伤效应的实验与分析

Author

Nie Xu, 聂栩, primary, Wang Zujun, 王祖军, additional, Wang Baichuan, 王百川, additional, Xue Yuanyuan, 薛院院, additional, Huang Gang, 黄港, additional, Lai Shankun, 赖善坤, additional, Tang Ning, 唐宁, additional, Wang Maocheng, 王茂成, additional, Zhao Mingtong, 赵铭彤, additional, Yang Fuyu, 杨馥羽, additional, and Wang Zhongming, 王忠明, additional

Published
2023
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49. Asymptomatic Yersinia pestis infection, China

Author

Li, Min, Song, Yajun, Li, Bei, Wang, Zujun, Yang, Ringhai, Jiang, Lingxiao, and Yang, Ruifu

Abstract

To the Editor: Plague is one of the oldest identifiable diseases. Modern public health measures and effective antimicrobial treatments have led to a decrease in plague cases worldwide. However, plague [...]

Published
2005

50. Dose Rate and Bias Effects on COTS Array CCDs Induce Dark Signals Increase

Author

Sheng Jiangkun, Liu Minbo, Yao Zhibin, He Baoping, and Wang Zujun

Subjects
Physics, Nuclear and High Energy Physics, Nuclear Energy and Engineering, business.industry, Total dose, Optoelectronics, Irradiation, Electrical and Electronic Engineering, Atomic physics, Dose rate, business
Abstract

The experiments of dose rate and bias effects on commercial-off-the-shelf array charge-coupled devices (CCDs) are presented. The dark signal ( ${V_{\rm D}}$ ) is calculated with the output signal voltages measured at different integration times when no light is incident on the CCDs. The dark signal voltages ( ${V_{\rm D}}$ ) versus the total dose at the dose rates of 0.01, 0.1, 1.0, 10.0, and 50 rad(Si)/s are compared. Annealing tests are performed to eliminate the time-dependent effects. Degradation levels were found to depend on the dose rates. The CCDs are divided into two groups—with one group biased and the other unbiased during $^{60}{\rm Co}\gamma $ irradiation. The biased CCDs are shown to degrade more severely than the unbiased CCDs.

Published
2014

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