Search

The intrinsic magnetic order, large topological-magnetic gap and rich topological phases make MnBi2Te4 a wonderful platform to study exotic topological quantum states such as axion insulator and Chern insulator. To realize and manipulate these topological phases in a MnBi2Te4 thin film, precise manipulation of the electric field across the film is essential, which requires a dual-gate structure. In this work, we achieve dual-gate tuning of MnBi2Te4 thin films grown with molecular beam epitaxy on SrTiO3(111) substrates by applying the substrate and an AlOx layer as the gate dielectrics of bottom and top gates, respectively. Under magnetic field of 9T and temperature of 20 mK, the Hall and longitudinal resistivities of the films show inversed gate-voltage dependence, for both top- and bottom-gates, signifying the existence of the dissipationless edge state contributed by Chern insulator phase in the ferromagnetic configuration. The maximum of the Hall resistivity only reaches 0.8 h/e2, even with dual-gate tuning, probably due to the high density of bulk carriers introduced by secondary phases. In the antiferromagnetic state under zero magnetic field, the films show normal insulator behavior. The dual-gated MnBi2Te4 thin films lay the foundation for developing devices based on electrically tunable topological quantum states., Comment: 24 pages, 4 figures

Real-space imaging of three-dimensional atomic structures is a critical yet challenging task in materials science. Although scanning transmission electron microscopy has achieved sub-angstrom lateral resolution through techniques like electron ptychography1,2, depth resolution remains limited to only 2 to 3 nanometers with a single projection setup3,4. Attaining better depth resolution typically necessitates large sample tilt angles and many projections, as seen in atomic electron tomography5,6. Here, we develop a new algorithm based on multislice electron ptychography which couples only a few projections at small tilt angles, but is sufficient to improve the depth resolution by more than threefold to the sub-nanometer scale, and potentially to the atomic level. This technique maintains high resolving power for both light and heavy atoms, and significantly improves the visibility of single dopants. We are thus able to experimentally detect dilute substitutional praseodymium dopants in a brownmillerite oxide, Ca2Co2O5, in three dimensions and observe the accompanying lattice distortion. This technique requires only a moderate level of data acquisition or processing, and can be seamlessly integrated into electron microscopes equipped with conventional components., Comment: 27 pages, 5 figures, 10 supplementary figures

The interplay between nontrivial band topology and layered antiferromagnetism in MnBi2Te4 has opened up a new avenue for exploring topological phases of matter. Representative examples include the quantum anomalous Hall effect and axion insulator state observed in odd and even number layers of MnBi2Te4, when the top and bottom surfaces have parallel and antiparallel spin alignments respectively. The rich and complex spin dynamics associated with the van der Waals antiferromagnetic order is expected to generate novel topological phases and phase transitions that are unique to MnBi2Te4. Here we fabricate a device of 7-septuple-layer MnBi2Te4 covered with AlOx capping layer, which enables the investigation of antiferromagnetic quantum anomalous Hall effect over wide parameter spaces. By tuning the gate voltage and perpendicular magnetic field, we uncover a cascade of quantum phase transitions that can be attributed to the influence of spin configurations on charge transport. Furthermore, we find that an in-plane magnetic field enhances both the coercive field and exchange gap of the surface state, in sharp contrast to that in ferromagnetic quantum anomalous Hall state. We propose that these peculiar features arise from the spin flip and flop transitions inherent to van der Waals antiferromagnet. The versatile tunability of the quantum anomalous Hall effect in MnBi2Te4 paves the way for potential applications in topological antiferromagnetic spintronics., Comment: 16 pages, 4 figures

The quantum anomalous Hall effect in layered antiferromagnet MnBi$_2$Te$_4$ harbors a rich interplay between magnetism and topology, holding a significant promise for low-power electronic devices and topological antiferromagnetic spintronics. In recent years, MnBi$_2$Te$_4$ has garnered considerable attention as the only known material to exhibit the antiferromagnetic quantum anomalous Hall effect. However, this field faces significant challenges as realizing quantized transport at zero magnetic fields depends critically on fabricating high-quality device. In this article, we address the detrimental influences of fabrication on MnBi$_2$Te$_4$ by simply depositing an AlO$_x$ thin layer on the surface prior to fabrications. Optical contrast and magnetotransport measurements on over 50 samples demonstrate that AlO$_x$ can effectively preserve the pristine state of the samples and significantly enhance the anomalous Hall effect towards quantization. Scaling analysis reveals the Berry curvature dominated mechanism of the anomalous Hall effect at various magnetic configurations. By adjusting the gate voltage, we uncover a gate independent antiferromagnetism in MnBi$_2$Te$_4$. Our experiment not only pave the way for fabricating high-quality transport devices but also advance the exploration of exotic quantum physics in 2D materials., Comment: 21 pages, 4 figures

Molecular adsorption is pivotal in device fabrication and material synthesis for quantum technology. However, elucidating the behavior of physisorption poses technical challenges. Here graphene with ultrahigh sensitivity was utilized to detect ozone adsorption at cryogenic temperatures. Significant hole doping observed in graphene indicates a strong interaction between ozone and graphene. Interestingly, the adsorption exhibits asymmetry with positive and negative gate voltages. The strong affinity of ozone provides a tool to modulate materials and devices, while the gate tunability of adsorption offers new insights into construction and manipulation of oxide quantum materials.

Anderson localization is anticipated to play a pivotal role in the manifestation of the quantum anomalous Hall effect, akin to its role in conventional quantum Hall effects. The significance of Anderson localization is particularly pronounced in elucidating the reasons behind the fragility of the observed quantum anomalous Hall state in the intrinsic magnetic topological insulator MnBi2Te4 with a large predicted magnetic gap. Here, employing varying sized MnBi2Te4 micro/nano-structures fabricated from a single molecular-beam-epitaxy-grown thin film, we have carried out a systematic size- and temperature-dependent study on the transport properties of the films regarding the quantum anomalous Hall states. The low-temperature transport properties of the finite-sized MnBi2Te4 samples can be quantitatively understood through Anderson localization, which plays an indispensable role in stabilizing the ground states. At higher temperatures, the failure of electron localization induced by an excessively short electronic dephasing length is identified as the cause of deviation from quantization. The work reveals that electronic dephasing and localization are non-negligible factors in designing high-temperature quantum anomalous Hall systems., Comment: 20 pages, 4 figures

We use magnetic force microscopy (MFM) to study spatial uniformity of magnetization of epitaxially grown MnBi2Te4 thin films. Compared to films which exhibit no quantum anomalous Hall effect (QAH), films with QAH are observed to have more spatial uniformity of magnetization with larger domain size. The domain evolution upon magnetic field sweeping indicates that the magnetic domains or the spatial nonuniformity of magnetization originates from the strong pinning of the inherent sample inhomogeneity. A direct correlation between the Hall resistivity and the domain size has been established by analyzing a series of thin films with and without QAH. Our observation shows that one has to suppress the spatial nonuniformity of magnetization to allow the Hall resistivity to be quantized. The fact that a sizable longitudinal resistivity remains even for the QAH sample suggests a quantized Hall insulator scenario. Our work provides important insights to the understanding of the quantization mechanism and the dissipation of the QAH state in MnBi2Te4 system., Comment: 14 pages, 4 figures

In this study, we investigate intrinsic magnetic topological insulator MnBi2Te4 thin films grown by molecular beam epitaxy. We observe a reentrant quantum anomalous Hall effect when the Fermi energy enters the valance band and magnetic field equals zero, indicating the emergence of the Chern Anderson insulator state. The discovery opens a new avenue for realizing the QAH effect and underscores the fundamental role of both Berry curvature and Anderson localization., Comment: 15 pages, 4 figures

Nonlinear charge transport, such as nonreciprocal longitudinal resistance and nonlinear Hall effect, has attracted considerable interest in probing the symmetries and topological properties of new materials. Recent research has revealed significant nonreciprocal longitudinal resistance and nonlinear Hall effect in MnBi2Te4, an intrinsic magnetic topological insulator, induced by the quantum metric dipole. However, the inconsistent response with charge density and conflicting C3z symmetry requirement necessitate a thorough understanding of factors affecting the nonlinear transport measurement. This study uncovers an experimental factor leading to significant nonlinear transport signals in MnBi2Te4, attributed to gate voltage oscillation from the application of large alternating current. Additionally, a methodology is proposed to suppress this effect by individually grounding the voltage electrodes during second-harmonic measurements. The investigation underscores the critical importance of assessing the impact of gate voltage oscillation before determining the intrinsic nature of nonlinear transport in 2D material devices with an electrically connected operative gate electrode., Comment: 16 pages, 4 figures

The recent discovery of superconductivity in La3Ni2O7-{\delta} under high pressure with a transition temperature around 80 K has sparked extensive experimental and theoretical efforts. Several key questions regarding the pairing mechanism remain to be answered, such as the most relevant atomic orbitals and the role of atomic deficiencies. Here, we develop a new energy-filtered multislice electron ptychography technique, assisted with electron energy loss spectroscopy, to address these critical issues. Oxygen vacancies are directly visualized and are found to primarily occupy the inner apical sites, which have been proposed to be crucial to superconductivity. We precisely determine the nanoscale stoichiometry and its correlation to the oxygen K edge spectra, which reveals a significant inhomogeneity in the oxygen content and electronic structure within the sample. The spectroscopic results also unveil that stoichiometric La3Ni2O7 is in the charge-transfer regime, with holes that are self-doped from Ni sites into O sites. The outer apical oxygen is found to be less relevant to the low-energy physics and can be safely disregarded in theoretical models. These observations will assist in further development and understanding of superconducting nickelate materials. Our imaging technique for quantifying atomic deficiencies can also be widely applied in materials science and condensed matter physics., Comment: 24 pages, 4 figures, and 10 supplementary figures

Neuromorphic devices have gained significant attention as potential building blocks for the next generation of computing technologies owing to their ability to emulate the functionalities of biological nervous systems. The essential components in artificial neural network such as synapses and neurons are predominantly implemented by dedicated devices with specific functionalities. In this work, we present a gate-controlled transition of neuromorphic functions between artificial neurons and synapses in monolayer graphene transistors that can be employed as memtransistors or synaptic transistors as required. By harnessing the reliability of reversible electrochemical reactions between C atoms and hydrogen ions, the electric conductivity of graphene transistors can be effectively manipulated, resulting in high on/off resistance ratio, well-defined set/reset voltage, and prolonged retention time. Overall, the on-demand switching of neuromorphic functions in a single graphene transistor provides a promising opportunity to develop adaptive neural networks for the upcoming era of artificial intelligence and machine learning., Comment: 22 pages, 4 figures

The parent compound of cuprates is a charge-transfer-type Mott insulator with strong hybridization between the Cu $3d_{\mathrm x^2-y^2}$ and O $2p$ orbitals. A key question concerning the pairing mechanism is the behavior of doped holes in the antiferromagnetic (AF) Mott insulator background, which is a prototypical quantum many-body problem. It was proposed that doped hole on the O site tends to form a singlet, known as Zhang-Rice singlet (ZRS), with the unpaired Cu spin. But experimentally little is known about the properties of a single hole and the interplay between them that leads to superconductivity. Here we use scanning tunneling microscopy to visualize the electronic states in hole-doped $\mathrm{Ca_2CuO_2Cl_2}$, aiming to establish the atomic-scale local basis for pair formation. A single doped hole is shown to have an in-gap state and a clover-shaped spatial distribution that can be attributed to a localized ZRS. When the dopants are close enough, they develop delocalized molecular orbitals with characteristic stripe- and ladder-shaped patterns, accompanied by the opening of a small gap around the Fermi level ($E_{\mathrm F}$). With increasing doping, the molecular orbitals proliferate in space and gradually form densely packed plaquettes, but the stripe and ladder patterns remain nearly the same. The low-energy electronic states of the molecular orbitals are intimately related to the local pairing properties, thus play a vitally important role in the emergence of superconductivity. We propose that the Cooper pair is formed by two holes occupying the stripe-like molecular orbital, while the attractive interaction is mediated by the AF spin background.

Superconductivity is a macroscopic quantum phenomenon and it is commonly believed that the in-plane superconducting transition temperature (Tc) should be isotropic for superconductors with crystal structures of stacking layers (quasi two-dimensional). Here, we report the observation of piezostrain-induced in-plane anisotropy of Tc in FeSe0.5Te0.5 (FST) thin films grown on ferroelectrics. The as-prepared FST shows tetragonal phase with equal in-plane lattice parameters and absence of in-plane anisotropy of Tc. Upon applying electric fields, piezostrain induces difference of the in-plane lattice parameters (a-b) and in-plane anisotropy of Tc. The in-plane anisotropy of Tc correlates with a-b and becomes more remarkable for larger values of a-b. Some possible extrinsic effects were ruled out by experiments and analysis. It is suggested that electronic nematicity with one direction induced by piezostrain and inhomogeneous superconductivity in FST are involved in this unusual phenomenon. This work reveals the exotic behavior of FST and will stimulate exploration of similar behavior in other unconventional superconductors., Comment: 22 pages, 4 figures

The chiral edge current is the boundary manifestation of the Chern number of a quantum anomalous Hall (QAH) insulator. Its direct observation is assumed to require well-quantized Hall conductance, and is so far lacking. The recently discovered van der Waals antiferromagnet MnBi$_2$Te$_4$ is theorized as a QAH in odd-layers but has shown Hall resistivity below the quantization value at zero magnetic field. Here, we perform scanning superconducting quantum interference device (sSQUID) microscopy on these seemingly failed QAH insulators to image their current distribution. When gated to the charge neutral point, our device exhibits edge current, which flows unidirectionally on the odd-layer boundary both with vacuum and with the even-layer. The chirality of such edge current reverses with the magnetization of the bulk. Surprisingly, we find the edge channels coexist with finite bulk conduction even though the bulk chemical potential is in the band gap, suggesting their robustness under significant edge-bulk scattering. Our result establishes the existence of chiral edge currents in a topological antiferromagnet and offers an alternative for identifying QAH states.

In conventional metal superconductors such as aluminum, the large number of weakly bounded Cooper pairs become phase coherent as soon as they start to form. The cuprate high critical temperature ($T_c$) superconductors, in contrast, belong to a distinctively different category. To account for the high $T_c$, the attractive pairing interaction is expected to be strong and the coherence length is short. Being doped Mott insulators, the cuprates are known to have low superfluid density, thus are susceptible to phase fluctuations. It has been proposed that pairing and phase coherence may occur separately in cuprates, and $T_c$ corresponds to the phase coherence temperature controlled by the superfluid density. To elucidate the microscopic processes of pairing and phase ordering in cuprates, here we use scanning tunneling microscopy to image the evolution of electronic states in underdoped $\rm Bi_2La_xSr_{2-x}CuO_{6+{\delta}}$. Even in the insulating sample, we observe a smooth crossover from the Mott insulator to superconductor-type spectra on small islands with chequerboard order and emerging quasiparticle interference patterns following the octet model. Each chequerboard plaquette contains approximately two holes, and exhibits a stripy internal structure that has strong influence on the superconducting features. Across the insulator to superconductor boundary, the local spectra remain qualitatively the same while the quasiparticle interferences become long-ranged. These results suggest that the chequerboard plaquette with internal stripes plays a crucial role on local pairing in cuprates, and the global phase coherence is established once its spatial occupation exceeds a threshold.

The microscopic mechanism for the disappearance of superconductivity in overdoped cuprates is still under heated debate. Here we use scanning tunneling spectroscopy to investigate the evolution of quasiparticle interference phenomenon in $\rm Bi_2Sr_2CuO_{6+\delta}$ over a wide range of hole densities. We find that when the system enters the overdoped regime, a peculiar quasiparticle interference wavevector with quarter-circle pattern starts to emerge even at zero bias, and its intensity grows with increasing doping level. Its energy dispersion is incompatible with the octet model for d-wave superconductivity, but is highly consistent with the scattering interference of gapless normal carriers. The weight of the gapless quasiparticle interference is mainly located at the antinodes and is independent of temperature. We propose that the normal fluid emerges from the pair-breaking scattering between flat antinodal bands in the quantum ground state, which is the primary cause for the reduction of superfluid density and suppression of superconductivity in overdoped cuprates.

The van der Waals antiferromagnetic topological insulator MnBi2Te4 represents a promising platform for exploring the layer-dependent magnetism and topological states of matter. Recently observed discrepancies between magnetic and transport properties have aroused controversies concerning the topological nature of MnBi2Te4 in the ground state. In this article, we demonstrate that fabrication can induce mismatched even-odd layer dependent magnetotransport in few-layer MnBi2Te4. We perform a comprehensive study of the magnetotransport properties in 6- and 7-septuple-layer MnBi2Te4, and reveal that both even- and odd-number-layer device can show zero Hall plateau phenomena in zero magnetic field. Importantly, a statistical survey of the optical contrast in more than 200 MnBi2Te4 flakes reveals that the zero Hall plateau in odd-number-layer devices arises from the reduction of the effective thickness during the fabrication, a factor that was rarely noticed in previous studies of 2D materials. Our finding not only provides an explanation to the controversies regarding the discrepancy of the even-odd layer dependent magnetotransport in MnBi2Te4, but also highlights the critical issues concerning the fabrication and characterization of 2D material devices., Comment: 25 pages, 4 figures

Boundary helical Luttinger liquid (HLL) with broken bulk time-reversal symmetry belongs to a unique topological class which may occur in antiferromagnets (AFM). Here, we search for signatures of HLL on the edge of a recently discovered topological AFM, MnBi2Te4 even-layer. Using scanning superconducting quantum interference device, we directly image helical edge current in the AFM ground state appearing at its charge neutral point. Such helical edge state accompanies an insulating bulk which is topologically distinct from the ferromagnetic Chern insulator phase as revealed in a magnetic field driven quantum phase transition. The edge conductance of the AFM order follows a power-law as a function of temperature and source-drain bias which serves as strong evidence for HLL. Such HLL scaling is robust at finite fields below the quantum critical point. The observed HLL in a layered AFM semiconductor represents a highly tunable topological matter compatible with future spintronics and quantum computation.

The intrinsic magnetic topological insulator MnBi2Te4 provides a feasible pathway to high temperature quantum anomalous Hall (QAH) effect as well as various novel topological quantum phases. Although quantized transport properties have been observed in exfoliated MnBi2Te4 thin flakes, it remains a big challenge to achieve molecular beam epitaxy (MBE)-grown MnBi2Te4 thin films even close to the quantized regime. In this work, we report the realization of quantized anomalous Hall resistivity in MBE-grown MnBi2Te4 thin films with the chemical potential tuned by both controlled in-situ oxygen exposure and top gating. We find that elongated post-annealing obviously elevates the temperature to achieve quantization of the Hall resistivity, but also increases the residual longitudinal resistivity, indicating a picture of high-quality QAH puddles weakly coupled by tunnel barriers. These results help to clarify the puzzles in previous experimental studies on MnBi2Te4 and to find a way out of the big difficulty in obtaining MnBi2Te4 samples showing quantized transport properties., Comment: 4 figures

The beauty of quantum Hall (QH) effect is the metrological precision of Hall resistance quantization that originates from the topological edge states. Understanding the factors that lead to quantization breakdown not only provides important insights on the nature of the topological protection of these edge states, but is beneficial for device applications involving such quantized transport. In this work, we combine conventional transport and real space conductivity mapping to investigate whether the quantization breakdown is tied to the disappearance of edge state in the hotly studied MnBi2Te4 system. Our experimental results unambiguously show that topological edge state does exist when quantization breakdown occurs. Such edge state is dissipative in nature and could lead to a quantization breakdown due to its diffusive character causing overlapping with bulk and other edge states in real devices. Our findings bring attentions to issues that are generally inaccessible in the transport study of QH, but can play important roles in practical measurements and device applications.

We use scanning tunneling microscopy to study the temperature evolution of electronic structure in Ca3Cu2O4Cl2 parent Mott insulator of cuprates. We find that the upper Hubbard band moves towards the Fermi energy with increasing temperature, while the charge transfer band remains basically unchanged. This leads to a reduction of the charge transfer gap size at high temperatures, and the rate of reduction is much faster than that of conventional semiconductors. Across the Neel temperature for antiferromagnetic order, there is no sudden change in the electronic structure. These results shed new light on the theoretical models about the parent Mott insulator of cuprates.

The chirality associated with broken time reversal symmetry in magnetically doped topological insulators has important implications to the quantum transport phenomena. Here we report the anomalous Hall effect studies in Mn- and Cr-doped Bi$_2$Te$_3$ topological insulators with varied thickness and doping content. By tracing the chirality of the Hall loops, we find that the Mn-type anomalous Hall effect with clockwise chirality is strengthened by the reduction of film thickness, which is opposite to that of the Cr-type anomalous Hall effect with counterclockwise chirality. We provide a phenomenological model to explain the evolution of magnetic order and anomalous Hall effect chirality in magnetically doped topological insulators., Comment: 11 pages, 5 figures

The recently discovered antiferromagnetic topological insulator MnBi$_2$Te$_4$ hosts a variety of exotic topological quantum phases such as the axion insulator and Chern insulator states. Here we report systematic gate voltage dependent magneto transport studies in six septuple-layer MnBi$_2$Te$_4$. In p-type carrier regime, we observe positive linear magnetoresistance when MnBi$_2$Te$_4$ is polarized in the ferromagnetic state by an out-of-plane magnetic field. Whereas in n-type regime, distinct negative magnetoresistance behaviors are observed. The magnetoresistance in both regimes is highly robust against temperature even up to the N\'eel temperature. Within the antiferromagnetic state, the behavior of magnetoresistance exhibits a transition from negative to positive as applying a gate voltage. The boundaries between different magnetoresistance behaviors in the experimental phase diagram can be explicitly characterized by the gate-voltage-independent magnetic fields that denotes the processes of the spin-flop transition. The rich transport phenomena demonstrate the intricate interplay between topology, magnetism and dimensionality in MnBi$_2$Te$_4$., Comment: 19 pages, 4 figures

The recently discovered antiferromagnetic (AFM) topological insulator (TI) MnBi2Te4 represents a versatile material platform for exploring exotic topological quantum phenomena in nanoscale devices. It has been proposed that even-septuple-layer (even-SL) MnBi2Te4 can host helical hinge currents with unique nonlocal behavior, but experimental confirmation is still lacking. In this work, we report transport studies of exfoliated MnBi2Te4 flakes with varied thicknesses down to the few-nanometer regime. We observe giant nonlocal transport signals in even-SL devices when the system is in the axion insulator state but vanishingly small nonlocal signal in the odd-SL devices at the same magnetic field range. In conjunction with theoretical calculations, we demonstrate that the nonlocal transport is via the helical edge currents mainly distributed at the hinges between the side and top/bottom surfaces. The helical edge currents in the axion insulator state may find unique applications in topological quantum devices., Comment: 16 pages, 4 figures

Being the first intrinsic antiferromagnetic(AFM) topological insulator(TI), MnBi2Te4 is argued to be a topological axion state in its even-layer form due to the antiparallel magnetization between the top and bottom layers. Here we combine both transport and scanning microwave impedance microscopy(sMIM) to investigate such axion state in atomically thin MnBi2Te4 with even-layer thickness at zero magnetic field. While transport measurements show a zero Hall plateau signaturing the axion state, sMIM uncovers an unexpected edge state raising questions regarding the nature of the 'axion state'. Based on our model calculation, we propose that the edge state of even-layer MnBi2Te4 at zero field is derived from gapped helical edge states of the quantum spin Hall effect with time-reversal-symmetry breaking, when a crossover from a three-dimensional TI MnBi2Te4 to a two-dimensional TI occurs. Our finding thus signifies the richness of topological phases in MnB2Te4 that has yet to be fully explored., Comment: 17 pages, 4 figures

The quantum anomalous Hall (QAH) effect in magnetic topological insulator (TI) represents a new state of matter originated from the interplay between topology and magnetism. The defining characteristics of the QAH ground state are the quantized Hall resistivity ($\rho_{yx}$) and vanishing longitudinal resistivity ($\rho_{xx}$) in the absence of external magnetic field. A fundamental question concerning the QAH effect is whether it is merely a zero-magnetic-field quantum Hall (QH) effect, or if it can host unique quantum phases and phase transitions that are unavailable elsewhere. The most dramatic departure of the QAH systems from other QH systems lies in the strong magnetic disorders that induce spatially random magnetization. Because disorder and magnetism play pivotal roles in the phase diagram of two-dimensional electron systems, the high degree of magnetic disorders in QAH systems may create novel phases and quantum critical phenomena. In this work, we perform systematic transport studies of a series of magnetic TIs with varied strength of magnetic disorders. We find that the ground state of QAH effect can be categorized into two distinct classes: the QAH insulator and anomalous Hall (AH) insulator phases, as the zero-magnetic-field counterparts of the QH liquid and Hall insulator in the QH systems. In the low disorder limit of the QAH insulator regime, we observe a universal quantized longitudinal resistance $\rho_{xx} = h/e^{2}$ at the coercive field. In the AH insulator regime, we find that a magnetic field can drive it to the QAH insulator phase through a quantum critical point with distinct scaling behaviors from that in the QH phase transition. We propose that the transmission between chiral edge states at domain boundaries, tunable by disorder and magnetic fields, is the key for determining the QAH ground state., Comment: 17 pages, 5 figures

To elucidate the superconductor to metal transition at the end of superconducting dome, the overdoped regime has stepped onto the center stage of cuprate research recently. Here, we use scanning tunneling microscopy to investigate the atomic-scale electronic structure of overdoped trilayer Bi-2223 and bilayer Bi-2212 cuprates. At low energies the spectroscopic maps are well described by dispersive quasiparticle interference patterns. However, as the bias increases to the superconducting coherence peak energy, a virtually non-dispersive pattern with sqrt(2)*sqrt(2) periodicity emerges. Remarkably, the position of the coherence peaks exhibits evident particle-hole asymmetry which also modulates with the same period. We propose that this is an extreme quasiparticle interference phenomenon, caused by pairing-breaking scattering between flat anti-nodal Bogoliubov bands, which is ultimately responsible for the superconductor to metal transition., Comment: 15 pages, 4 figures