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14 results on '"Wang Duxiang"'

4. Effects of hole-injection through side-walls of large V-pits on efficiency droop in III–nitride LEDs

Author

Daqian Ye, Jie Zhang, Liu Xiaofeng, Ming-Qing Liu, Chen Shasha, Hui-Wen Li, Wang Duxiang, and Zhang Dongyan

Subjects
Materials science, business.industry, General Physics and Astronomy, Chemical vapor deposition, Semiconductor device, Nitride, law.invention, Surface coating, law, Optoelectronics, Voltage droop, business, Quantum well, Deposition (law), Light-emitting diode
Published
2019

6. Investigation of GaInAs strain reducing layer combined with InAs quantum dots embedded in Ga(In)As subcell of triple junction GaInP/Ga(In)As/Ge solar cell

Author

Lin Guijiang, Liu Guanzhou, Li Mingyang, Li Senlin, Yang Meijia, Song Minghui, Changqing Chen, Wu Chaoyu, Chen Wenjun, Wang Duxiang, Bi Jingfeng, Xiong Weiping, Yang Li, and Yanyan Fang

Subjects
Materials science, Nano Express, Strain reducing layer, business.industry, Open-circuit voltage, Band gap, Triple junction, Energy conversion efficiency, Nanochemistry, Nanotechnology, InAs quantum dots, Condensed Matter Physics, Suns in alchemy, Metal organic chemical vapor deposition, law.invention, Materials Science(all), Triple junction solar cell, Quantum dot, law, Solar cell, Optoelectronics, General Materials Science, business
Abstract

The InAs/GaAs quantum dots structure embedded in GaInP/Ga(In)As/Ge triple junction solar cell with and without Ga0.90In0.10As strain reducing layer was investigated. Conversion efficiency of 33.91% at 1,000 suns AM 1.5D with Ga0.90In0.10As strain reducing layer was demonstrated. A 1.19% improvement of the conversion efficiency was obtained via inserting the Ga0.90In0.10As strain reducing layer. The main contribution of this improvement was from the increase of the short-circuit current, which is caused by the reduction of the Shockley–Read–Hall recombination centers. Consequently, there was a decrease in open circuit voltage due to the lower thermal activation energy of confined carriers in Ga0.9In0.1As than GaAs and a reduction in the effective band gap of quantum dots.

Published
2015

7. Enhanced Efficiency of Metamorphic Triple Junction Solar Cells for Space Applications

Author

Chen Wenjun, Wang Duxiang, Liu Guanzhou, Li Mingyang, Bi Jingfeng, Song Minghui, Wu Chaoyu, and Li Senlin

Subjects
010302 applied physics, Materials science, business.industry, Triple junction, Metamorphic rock, General Physics and Astronomy, chemistry.chemical_element, Germanium, 02 engineering and technology, 021001 nanoscience & nanotechnology, Space (mathematics), 01 natural sciences, Line defects, Surface coating, Photon emission, chemistry, 0103 physical sciences, Energy transformation, Optoelectronics, 0210 nano-technology, business
Published
2017

8. Using a compositionally step graded hole reservoir layer with hole accelerating ability for reducing efficiency droop in GaN-based LEDs

Author

Wu Chaoyu, Meichun Huang, Zhang Dongyan, Wang Duxiang, Chenke Xu, Daqian Ye, and Jie Zhang

Subjects
010302 applied physics, Materials science, business.industry, General Physics and Astronomy, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, lcsh:QC1-999, law.invention, law, Electric field, Lattice (order), 0103 physical sciences, Optoelectronics, Voltage droop, Operating voltage, 0210 nano-technology, business, lcsh:Physics, Light-emitting diode
Abstract

We presented a compositionally graded hole reservoir layers(HRL) - an AlGaN/GaN super lattice hole reservoir layer with Al mole fraction multi-step gradient from high to low (GSL-HRL) in this paper. The designed LED with compositionally step graded HRL shows comparable low operating voltage and less efficiency droop. Simulation results reveal that this graded HRL could reserve the hole effectively and the hole in HRL can be energized by the strong electric field due to the polarization caused by different Al contents AlxGa1-xN layers. Such a design makes hole travel across the p-type EBL and inject into the MQWs more efficiently and smoothly. The novel structure of HRL improves the performance of the LED significantly and gives a promising application in high power GaN-based LED in the future.

Published
2017

9. Investigation of GaInAs strain reducing layer combined with InAs quantum dots embedded in Ga(In)As subcell of triple junction GaInP/Ga(In)As/Ge solar cell

Author

Li, Senlin, primary, Bi, Jingfeng, additional, Li, Mingyang, additional, Yang, Meijia, additional, Song, Minghui, additional, Liu, Guanzhou, additional, Xiong, Weiping, additional, Li, Yang, additional, Fang, Yanyan, additional, Chen, Changqing, additional, Lin, Guijiang, additional, Chen, Wenjun, additional, Wu, Chaoyu, additional, and Wang, Duxiang, additional

Published
2016
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10. Broadband modified B Sandwich as radome's layer structure

Author

Wang Duxiang

Subjects
Optics, Materials science, law, business.industry, Broadband, Radome, Electrical and Electronic Engineering, Perpendicular polarization, business, Telecommunications, Layer (electronics), law.invention, Group delay and phase delay
Abstract

An effective broadband modified B Sandwich as radome's layer structure is proposed. The power transmission coefficient of this sandwich is over 80% under large incident angle range (0°∼70°) and broadband (0∼40GHz). The difference of insertion phase delay (IPD) between perpendicular polarization and parallel one is very small.

Published
1994

11. The Epitaxial Growth of High Efficiency Inverted Metamorphic Triple Junction Solar Cell for CPV Application.

Author

Bi Jingfeng, Li Senlin, Liu Guanzhou, Yang Meijia, Li Mingyang, Xiong Weiping, Song Minghui, Lin Guijiang, Chen Wenjun, and Wang Duxiang

Subjects
EPITAXY, SOLAR cells, SOLAR concentrators, PHOTOVOLTAIC power systems, X-ray diffraction, ELECTRIC inverters
Abstract

In this paper, 3J-IMM solar cells were studied in comparison with 3J-LM solar cells grown by MOCVD. The structural characteristics were studied by HRXRD, HRTEM and SIMS, which showed a high crystal quality of the metamorphic sub-cell. The solar cell performance in terms of I-V curves and EQE was investigated between the different solar cells structures. The current of the IMM solar cell is almost equal to the LM 'monitor solar cell. Under AM 1.5D, 1000 suns conditions, an Isc of 14.29 A, Voc of 3.538 V, FF of 83.9%, and an efficiency of 42.3% were achieved for the 3J-IMM solar cell with a chip size of 1.0 cm2, which is an absolute 2.9% higher than that of a 3J-LM solar cell in conversion efficiency. The excess current contribution from the Ge bottom cell in the 3J-LM solar cells is eliminated, accompanied with a 0.3V increase in Voc for the 3J-IMM solar cells. [ABSTRACT FROM AUTHOR]

Published
2015
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14. Tilt Dependent PL and Fluorescence Spectra of InGaAsP/In[sub 0.5](GaAl)[sub 0.5]P Quantum Well.

Author

Wei, Jiyong, Huang, Baibiao, Yu, Yongqin, Zhou, Hailong, Pan, Jiaoqing, Zhang, Xiaoyang, Qin, Xiaoyan, Xia, Wei, Wang, Duxiang, Yue, Jinshun, and Ren, Zhongxiang

Subjects
QUANTUM wells, GALLIUM arsenide semiconductors, FLUORESCENCE
Abstract

By 532 nm laser pumped PL spectral and Xe pumped fluorescence spectral, characterized InGaAsP/In[sub 0.5](Ga[sub x]Al[sub 1-x])[sub 0.5]P quantum well on substrates 2°, 15° tilted to (110) the optical property dependence of substrates tilt. The PL wavelength varies from 755 nm of the quantum well on substrate of 2° to the 780 nm of the quantum well on substrate of 15°. From fluorescence excitation spectral to excite about 760 nm wavelength of quantum well, the absorption light peak wavelength is 508 nm in common, and has another absorption peak wavelength of 622 nm. Excited by 508 nm and 622 nm wavelength, the fluorescence spectral intensity of the 15° quantum well is about 300 and 10[sup 4] accordingly. Lifetime of charge recombination is about 1.26 ns for this material. [ABSTRACT FROM AUTHOR]

Published
2002
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