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Photocatalytic water splitting is a promising route to low-cost, green H2. However, this approach is currently limited in its solar-to-hydrogen conversion efficiency. One major source of efficiency loss is attributed to the high rates of undesired side and back reactions, which are exacerbated by the proximity of neighboring oxidation and reduction sites. Nanoscopic oxide coatings have previously been used to selectively block undesired reactants from reaching active sites; however, a coating encapsulating the entire photocatalyst particle limits activity as it cannot facilitate both half-reactions. In this work, area selective atomic layer deposition (AS-ALD) was used to selectively deposit semipermeable TiO2 films onto model metallic cocatalysts for enhancing reaction selectivity while maintaining a high overall activity. Pt and Au were used as exemplary reduction and oxidation cocatalyst sites, respectively, where Au was deactivated toward ALD growth through self-assembled thiol monolayers while TiO2 was coated onto Pt sites. Electroanalytical measurements of monometallic thin film electrodes showed that the TiO2-encapsulated Pt effectively suppressed undesired H2 oxidation and Fe(II)/Fe(III) redox reactions while still permitting the desired hydrogen evolution reaction (HER). A planar model photocatalyst platform containing patterned interdigitated arrays of Au and Pt microelectrodes was further assessed using scanning electrochemical microscopy (SECM), demonstrating the successful use of AS-ALD to enable local reaction selectivity in a dual-reaction-site (photo)electrocatalytic system. Finally, interdigitated microelectrodes having independent potential control were used to show that selectively deposited TiO2 coatings can suppress the rate of back reactions on neighboring active sites by an order of magnitude compared with uncoated control samples.

High entropy oxides (HEOs), based on the incorporation of multiple-principal cations into the crystal lattice, offer the possibility to explore previously inaccessible oxide compositions and unconventional properties. Here it is demonstrated that despite the chemical complexity of HEOs external stimuli, such as epitaxial strain, can selectively stabilize certain magneto-electronic states. Epitaxial (Co0.2 Cr0.2 Fe0.2 Mn0.2 Ni0.2 )3 O4 -HEO thin films are grown in three different strain states: tensile, compressive, and relaxed. A unique coexistence of rocksalt and spinel-HEO phases, which are fully coherent with no detectable chemical segregation, is revealed by transmission electron microscopy. This dual-phase coexistence appears as a universal phenomenon in (Co0.2 Cr0.2 Fe0.2 Mn0.2 Ni0.2 )3 O4 epitaxial films. Prominent changes in the magnetic anisotropy and domain structure highlight the strain-induced bidirectional control of magnetic properties in HEOs. When the films are relaxed, their magnetization behavior is isotropic, similar to that of bulk materials. However, under tensile strain, the hardness of the out-of-plane (OOP) axis increases significantly. On the other hand, compressive straining results in an easy OOP magnetization and a maze-like magnetic domain structure, indicating the perpendicular magnetic anisotropy. Generally, this study emphasizes the adaptability of the high entropy design strategy, which, when combined with coherent strain engineering, opens additional prospects for fine-tuning properties in oxides.

Molybdenum disulfide (MoS2), a two‐dimensional (2D) semiconducting material harbors intrinsic defects that can be harnessed to achieve tuneable electronic, optoelectronic, and electrochemical devices. However, achieving precise control over defect formation within monolayer MoS2, remains a notable challenge. Here, an in‐situ defect engineering approach for monolayer MoS2 using a pressure‐dependent chemical vapor deposition (CVD) process is presented. Monolayer MoS2 grown in a low pressure CVD conditions (LP‐MoS2) produces sulfur vacancy (Vs) induced defect‐rich crystals primarily attributed to the oxygen‐deficient growth conditions. Conversely, atmospheric pressure CVD‐grown MoS2 (AP‐MoS2) passivates these defects with oxygen from ambient conditions. This disparity in defect profiles profoundly impacts crucial functional properties and device performance. AP‐MoS2 shows a drastically enhanced photoluminescence, which is significantly quenched in LP‐MoS2 attributed to in‐gap electron donor states induced by the Vs defects. However, the n‐doping induced in LP‐MoS2 generates enhanced photoresponsivity and detectivity in fabricated photodetectors compared to the AP‐MoS2‐based devices. Defect‐rich LP‐MoS2 outperforms AP‐MoS2 as channel layers of field‐effect transistors (FETs), as well as electrocatalytic material for hydrogen evolution reaction (HER). This work presents a single‐step CVD approach for in situ defect engineering in monolayer MoS2 and presents a pathway to control defects in other monolayer 2D materials. [ABSTRACT FROM AUTHOR]

The ability to accommodate multiple principal cations within a single crystallographic structure makes high entropy oxides (HEOs) ideal systems for exploring new composition–property relationships. In this work, the high-entropy design strategy is extended to strained single-crystal HEO-manganite (HEO-Mn) thin films. Phase-pure orthorhombic films of (Gd0.2La0.2Nd0.2Sm0.2Sr0.2)MnO3 were deposited on three different single-crystal substrates: SrTiO3 (STO) (100), NdGaO3 (110), and LaAlO3 (LAO) (100), each inducing different degrees of epitaxial strain. Fully coherent growth of the thin films is observed in all cases, despite the high degree of lattice mismatch between HEO-Mn and LAO. Magnetometry measurements reveal distinct differences in the magnetic properties between epitaxially strained HEO-Mn thin films and their bulk crystalline HEO counterparts. In particular, the bulk polycrystalline HEO-Mn shows two magnetic transitions as opposed to a single one observed in epitaxial thin films. Moreover, the HEO-Mn film deposited on LAO exhibits a significant reduction in the Curie temperature, which is attributed to the strong variation of the in-plane lattice parameter along the thickness of the film and the resulting changes in the Mn–O–Mn bond geometry. Thus, this preliminary study demonstrates the potential of combining high entropy design with strain engineering to tailor the structure and functionality of perovskite manganites. [ABSTRACT FROM AUTHOR]

The article focuses on developing a multiscale generative model to understand disorder in domain boundaries in atomic resolution microscopy. Topics discussed include the model's ability to predict domain boundaries in materials, the discovery of new boundary motifs, and its potential to enhance functional materials design.

Vanadium oxides with fast and stable Zn2+ storage are of great significance to the development of high‐performance aqueous zinc ion batteries (ZIBs), and yet they commonly suffer from structural instability and sluggish diffusion kinetics. Herein, a new "dual‐ion‐in‐sequence" intercalation strategy based on quenching is proposed to address these issues. Interestingly, it is found that the Zn2+ storage mechanism evolves from the common solid‐state ion diffusion kinetic into an intercalation pseudocapacitance as a result of the enlarged interlayer spacing of V2O5. Together with the expanded interlayer spacing arising from the "dual‐ion‐in‐sequence" intercalation, oxygen defects are simultaneously generated at the sub‐surface of the reconstructed Li@MnVO materials. Benefitting from the improved ionic diffusivity, intercalation pseudocapacitance, and fast charge transferability, full cell based on Li@MnVO cathode shows impressive rate capability and excellent cycling stability of 5000 cycles with a high energy density of 253 Wh kg‐1 at 10 A g‐1. More importantly, the capacity can maintain at 125 mAh g‐1 at 4 A g‐1 even under a raised mass loading of 10 mg cm‐2. The proposed "dual‐ion‐in‐sequence" intercalation strategy of manipulating V2O5 structure at atomic scales is a viable pathway for the high‐performance layered metal oxides, not only for ZIBs but also for other energy storage systems. [ABSTRACT FROM AUTHOR]

Atomically dispersed Pt species are advocated as a promising electrocatalyst for the oxygen reduction reaction (ORR) to boost noble metal utilization efficiency. However, when assembled on various substrates, isolated Pt single atoms are often demonstrated to proceed through the two‐electron ORR pathway due to the unfavorable O─O bond cleavage thermodynamics in the absence of catalytic ensemble sites. In addition, although their distinct local coordination environments at the exact single active sites are intensively explored, the interactions and synergy between closely neighboring single atom sites remain elusive. Herein, atomically dispersed Pt monomers strongly interacting on a Mo2C support is demonstrated as a model catalyst in the four‐electron ORR, and the beneficial interactions between two closely neighboring and yet non‐contiguous Pt single atom sites (named as quasi‐paired Pt single atoms) are shown. Compared to isolated Pt single atom sites, the quasi‐paired Pt single atoms deliver a superior mass activity of 0.224 A mg−1Pt and near‐100% selectivity toward four‐electron ORR due to the synergistic interaction from the two quasi‐paired Pt atom sites in modulating the binding mode of reaction intermediates. Our first‐principles calculations reveal a unique mechanism of such quasi‐paired configuration for promoting four‐electron ORR. [ABSTRACT FROM AUTHOR]