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GeSnC alloys offer a route to direct bandgap semiconductors for CMOS-compatible lasers, but the use of CBr4 as a carbon source was shown to reduce Sn incorporation by 83%–92%. We report on the role of thermally cracked H in increasing Sn incorporation by 6x–9.5x, restoring up to 71% of the lost Sn, and attribute this increase to removal of Br from the growth surface as HBr prior to formation of volatile groups such as SnBr4. Furthermore, as the H flux is increased, Rutherford backscattering spectroscopy reveals a monotonic increase in both Sn and carbon incorporation. X-ray diffraction reveals tensile-strained films that are pseudomorphic with the substrate. Raman spectroscopy suggests substitutional C incorporation; both x-ray photoelectron spectroscopy and Raman suggest a lack of graphitic carbon or its other phases. For the lowest growth temperatures, scanning transmission electron microscopy reveals nanovoids that may account for the low Sn substitutional fraction in those layers. Conversely, the sample grown at high temperatures displayed abrupt interfaces, notably devoid of any voids, tin, or carbon-rich clusters. Finally, the surface roughness decreases with increasing growth temperature. These results show that atomic hydrogen provides a highly promising route to increase both Sn and C to achieve a strongly direct bandgap for optical gain and active silicon photonics. [ABSTRACT FROM AUTHOR]

Direct bandgap group IV materials could provide intimate integration of lasers, amplifiers, and compact modulators within complementary metal–oxide–semiconductor for smaller, active silicon photonics. Dilute germanium carbides (GeC) with ∼1 at. % C offer a direct bandgap and strong optical emission, but energetic carbon sources such as plasmas and e-beam evaporation produce defective materials. In this work, we used CBr4 as a low-damage source of carbon in molecular beam epitaxy of tin-free GeC, with smooth surfaces and narrow x-ray diffraction peaks. Raman spectroscopy showed substitutional incorporation of C and no detectable sp2 bonding from amorphous or graphitic carbon, even without surfactants. Photoluminescence shows strong emission compared with Ge. [ABSTRACT FROM AUTHOR]

We demonstrate high-speed mid-wave infrared photoconductive detectors leveraging a lattice-mismatched, epitaxially grown InSb absorber material patterned with nanometer-scale hole arrays. We show that the nano-scale hole patterns allow for post-growth control over the detector response time by introducing recombination surfaces to increase non-radiative recombination. The photoconductive pixels are integrated into a microwave coplanar waveguide for high frequency characterization. The detector response is characterized as a function of temperature and hole-array dimensions. We show a detector response with characteristic time scales of tens of picoseconds and bandwidths up to 7 GHz at room temperature. The presented detectors offer a mechanism for engineering response times in long wavelength detectors for potential applications in high-speed sensing/imaging, free-space communication, ranging, or dual-comb spectroscopy. [ABSTRACT FROM AUTHOR]

III-V lasers based on self-assembled quantum dots (QDs) have attracted widespread interest due to their unique characteristics, including low threshold current density (Jth), low sensitivity to backreflections, and resistance to threading dislocations. While most work to date has focused on 1.3 μm InAs/GaAs QDs, InP QDs have also aroused interest in lasers emitting at visible wavelengths. Molecular beam epitaxy (MBE) enables the growth of high-density InP/AlGaInP QDs on exact (001)-oriented GaAs substrates but requires a relatively low substrate temperature of <500 °C. The low substrate temperature used for phosphide growth in MBE leads to degraded optical properties and makes post-growth annealing a crucial step to improve the optical quality. Here, we report the exceptional thermal stability of InP/AlGaInP QDs grown using MBE, with up to 50× improvement in room temperature photoluminescence intensity with the optimization of annealing temperature and time. We also demonstrate the room temperature pulsed operation of InP multiple quantum dot (MQD) lasers on GaAs (001) emitting close to 735 nm with Jth values of 499 A/cm2 after annealing, a factor of 6 lower than their as-grown counterparts and comparable to such devices grown by MOCVD. In0.6Ga0.4P single quantum well (SQW) lasers on GaAs (001) also exhibit a substantial reduction in Jth from 340 A/cm2 as-grown to 200 A/cm2 after annealing, emitting at 680 nm under pulsed operation conditions. This work shows that post-growth annealing is essential for realizing record-performance phosphide lasers on GaAs grown by MBE for applications in visible photonics. [ABSTRACT FROM AUTHOR]

We present a semiconductor-based optoelectronic switch based on active modulation of surface plasmon polaritons (SPPs) at lattice-matched indium gallium arsenide (In0.53Ga0.47As) degenerately doped pn++ junctions. The experimental device, which we refer to as a surface plasmon polariton diode (SPPD), is characterized electrically and optically, showing far-field reflectivity modulation for mid-IR wavelengths. Self-consistent electro-optic multiphysics simulations of the device’s electrical and electromagnetic response have been performed to estimate bias-dependent modulation and switching times. The numerical model shows a strong agreement with the experimental results, validating the claim of excitation and modulation of SPPs at the junction, thus potentially providing a new pathway toward fast optoelectronic devices.

Here, we review the progress and most recent advances in phonon-polaritonics, an emerging and growing field that has brought about a range of powerful possibilities for mid- to far-infrared (IR) light. These extraordinary capabilities are enabled by the resonant coupling between the impinging light and the vibrations of the material lattice, known as phonon-polaritons (PhPs). These PhPs yield a characteristic optical response in certain materials, occurring within an IR spectral window known as the reststrahlen band. In particular, these materials transition in the reststrahlen band from a high-refractive-index behavior, to a near-perfect metal behavior, to a plasmonic behavior – typical of metals at optical frequencies. When anisotropic they may also possess unconventional photonic constitutive properties thought of as possible only with metamaterials. The recent surge in two-dimensional (2D) material research has also enabled PhP responses with atomically-thin materials. Such vast and extraordinary photonic responses can be utilized for a plethora of unusual effects for IR light. Examples include sub-diffraction surface wave guiding, artificial magnetism, exotic photonic dispersions, thermal emission enhancement, perfect absorption and enhanced near-field heat transfer. Finally, we discuss the tremendous potential impact of these IR functionalities for the advancement of IR sources and sensors, as well as for thermal management and THz-diagnostic imaging.

Surface plasmon polaritons and their localized counterparts, surface plasmons, are widely used at visible and near-infrared (near-IR) frequencies to confine, enhance, and manipulate light on the subwavelength scale. At these frequencies, surface plasmons serve as enabling mechanisms for future on-chip communications architectures, high-performance sensors, and high-resolution imaging and lithography systems. Successful implementation of plasmonics-inspired solutions at longer wavelengths, in the mid-infrared (mid-IR) frequency range, would benefit a number of highly important technologies in health- and defense-related fields that include trace-gas detection, heat-signature sensing, mimicking, and cloaking, and source and detector development. However, the body of knowledge of visible/near-IR frequency plasmonics cannot be easily transferred to the mid-IR due to the fundamentally different material response of metals in these two frequency ranges. Therefore, mid-IR plasmonic architectures for subwavelength light manipulation require both new materials and new geometries. In this work we attempt to provide a comprehensive review of recent approaches to realize nano-scale plasmonic devices and structures operating at mid-IR wavelengths. We first discuss the motivation for the development of the field of mid-IR plasmonics and the fundamental differences between plasmonics in the mid-IR and at shorter wavelengths. We then discuss early plasmonics work in the mid-IR using traditional plasmonic metals, illuminating both the impressive results of this work, as well as the challenges arising from the very different behavior of metals in the mid-IR, when compared to shorter wavelengths. Finally, we discuss the potential of new classes of mid-IR plasmonic materials, capable of mimicking the behavior of traditional metals at shorter wavelengths, and allowing for true subwavelength, and ultimately, nano-scale confinement at long wavelengths.

We demonstrate electrical modulation of plasmonic interfaces in semiconductor p-n++ junctions fabricated from both III–V and Si materials. Junction diodes are grown/fabricated, consisting of degenerately doped n-type material and heavily doped p-type material, where the n++ semiconductor acts as a plasmonic material capable of supporting infrared propagating surface plasmon polaritons. Devices were characterized electrically and optically, and we achieved tuning of the reflectivity under applied bias with amplitude reaching 1.5% in mid-IR wavelengths. We developed a model of electrical carrier injection at the degenerately doped interface, which we used to model the bias-dependent optical properties of the system. A strong agreement between our model and experimental results is demonstrated. The presented devices offer the opportunity for electrical modulation of propagating plasmonic modes in an all-semiconductor system. [ABSTRACT FROM AUTHOR]

We present InAsP multi-functional metamorphic buffers (MFMBs) designed to enable mid-infrared Type-I InAs quantum well (QW) lasers on InP substrates. InAsxP1-x/InP MFMBs with x = 0.5–0.7 provide a versatile platform for Type-I InAs QW laser diodes in the mid-infrared regime by bridging the lattice mismatch between InAs and InP while simultaneously functioning as the bottom cladding layer for laser structures. Cross-sectional transmission electron microscopy shows that InAs multi-QWs can be grown as thick as 15 nm without forming misfit dislocations on an InAs0.7P0.3 buffer, enabling room-temperature photoluminescence at wavelengths >3 μm. We then compare the performance of lasers grown on InAsP MFMBs and show that the temperature dependence strongly depends on the energy band offset between the QW and the metamorphic InAsP waveguides. Future work could improve performance at longer wavelengths by investigating the use of electron blocking layers and adjusting the device design to minimize parasitic heating. [ABSTRACT FROM AUTHOR]