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While extensively studied in normal metals, semimetals and semiconductors, the superconducting (SC) proximity effect remains elusive in the emerging field of flat-band systems. In this study we probe proximity-induced superconductivity in Josephson junctions (JJs) formed between superconducting NbTiN electrodes and twisted bilayer graphene (TBG) weak links. Here the TBG acts as a highly tunable topological flat-band system, which due to its twist-angle dependent bandwidth, allows to probe the SC proximity effect at the crossover from the dispersive to the flat-band limit. Contrary to our original expectations, we find that the SC remains strong even in the flat-band limit, and gives rise to broad, dome shaped SC regions, in the filling dependent phase diagram. In addition, we find that unlike in conventional JJs, the critical current Ic strongly deviates from a scaling with the normal state conductance GN. We attribute these findings to the onset of strong electron interactions, which can give rise to an excess critical current, and also work out the potential importance of quantum geometric terms as well as multiband pairing mechanisms. Our results present the first detailed study of the SC proximity effect in the flat-band limit and shed new light on the mechanisms that drive the formation of SC domes in flat-band systems.

We report on the influence of a photochemical doping method on the spin-valley polarization degree ($P_{c}$) of excitons in WSe$_2$ monolayers. By varying the carrier density and transitioning from an excess of electrons (n-type) to an excess of holes (p-type), we observe a non-monotonic dependence of $P_{c}$ on the doping level. Using controlled, single-shot photochlorination steps, we unveil this non-monotonic behavior, with $P_{c}$ reaching a minimum value of less than 10$\%$ at 78 K near the charge neutrality point, while increasing by a factor of three at a hole density of $5 \times 10^{11} \,\mathrm{cm^{-2}}$. The impact of the doping on $P_{c}$ is explained using a phenomenological model that accounts for various mechanisms influencing exciton polarization dynamics, including exciton-carrier scattering processes and exciton-to-trion conversion rates. Among these, exciton-carrier collisions emerge as the dominant mechanism driving the observed variations in $P_{c}$, while the exciton effective lifetime remains nearly independent of doping. These findings highlight the potential of photochemical methods for investigating valley physics and for effectively tuning the exciton polarization degree in transition metal dichalcogenide monolayers., Comment: 8 pages, 4 figures

Flying qubits encode quantum information in propagating modes instead of stationary discrete states. Although photonic flying qubits are available, the weak interaction between photons limits the efficiency of conditional quantum gates. Conversely, electronic flying qubits can use Coulomb interactions, but the weaker quantum coherence in conventional semiconductors has hindered their realization. In this work, we engineered on-demand injection of a single electronic flying qubit state and its manipulation over the Bloch sphere. The flying qubit is a Leviton propagating in quantum Hall edge channels of a high-mobility graphene monolayer. Although single-shot qubit readout and two-qubit operations are still needed for a viable manipulation of flying qubits, the coherent manipulation of an itinerant electronic state at the single-electron level presents a highly promising alternative to conventional qubits., Comment: 5 Figures, Comments are welcome

In recent years, graphene Field-Effect-Transistors (GFETs) have demonstrated an outstanding potential for Terahertz (THz) photodetection due to their fast response and high-sensitivity. Such features are essential to enable emerging THz applications, including 6G wireless communications, quantum information, bioimaging and security. However, the overall performance of these photodetectors may be utterly compromised by the impact of internal resistances presented in the device, so-called access or parasitic resistances. In this work, we provide a detailed study of the influence of internal device resistances in the photoresponse of high-mobility dual-gate GFET detectors. Such dual-gate architectures allow us to fine tune (decrease) the internal resistance of the device by an order of magnitude and consequently demonstrate an improved responsivity and noise-equivalent-power values of the photodetector, respectively. Our results can be well understood by a series resistance model, as shown by the excellent agreement found between the experimental data and theoretical calculations. These findings are therefore relevant to understand and improve the overall performance of existing high-mobility graphene photodetectors.

The origin of superconductivity in magic-angle twisted bilayer graphene has been a subject of intense debate. While some experimental evidence indicated an unconventional pairing mechanism, efforts to tune the critical temperature by screening the Coulomb interactions have been unsuccessful, possibly indicating a conventional phonon-mediated pairing. Here we study a double-layer electronic system consisting of two twisted graphene bilayers in immediate proximity of each other but remaining electronically decoupled. By increasing the carrier density in one bilayer, we completely suppressed both the superconductivity and the correlated-insulator state in the adjacent magic-angle graphene. The observation of such a screening effect offers strong support for an unconventional mechanism of Cooper pairing in magic-angle twisted bilayer graphene, shedding new light on the underlying physics governing their properties., Comment: 25 pages, 9 figures

Layered materials have attracted significant interest because of their unique properties. Van der Waals heterostructures based on transition-metal dichalcogenides have been extensively studied because of potential optoelectronic applications. We investigate the optical response of a light-emitting tunneling structure based on a WSe\textsubscript{2} monolayer as an active emission material using the photoluminescence (PL) and electroluminescence (EL) experiments performed at low temperature of 5~K. We found that the application of the bias voltage allows us to change both a sign and a value of free carriers concentrations. Consequently, we address the several excitonic complexes emerging in PL spectra under applied bias voltage. The EL signal was also detected and ascribed to the emission in a high-carrier-concentration regime. The results show that the excitation mechanisms in the PL and EL are different, resulting in various emissions in both types of experimental techniques., Comment: 8 pages, 4 figures

In a twisted graphene on hexagonal Boron Nitride, the presence of a gap and the breaking of the symmetry between carbon sublattices leads to multicomponent fractional quantum Hall effect (FQHE) due to the electrons correlation. We report on the FQHE at filling factors nu = k/2 and nu = k/3 with nu > 1, and on the composite fermions at in the nu < 1 lowest landau Level nu = 4/5, 5/7 and 2/3. These fractional states can be described with a partons model, in which the electron is broken down into sub-particles each one residing in an integer quantum Hall effect state; partons are fictitious particles that, glued back together, recover the physical electrons. The parton states host exotic anyons that could potentially form building blocks of a fault-tolerant topological quantum computer.

The energy gap of Bernal-stacked bilayer graphene can be tuned by applying a perpendicular electric field. The origin of this gap can be traced down to the breaking of its inversion symmetry by an onsite potential difference between the layers. This degree of tunability makes bilayer graphene a perfect playground for the study of the effects of electric fields, such as the crystalline field, which are developed when layers of other materials are deposited on top of it. Here, we introduce a novel device architecture allowing a simultaneous control over the applied displacement field and the crystalline alignment between two materials. Our experimental and numerical results confirm that the crystal field and electrostatic doping due to the interface reflect the 120$^{\circ}$ symmetry of the bilayer graphene/BN heterostructure and are highly affected by the commensurate state. These results provide an unique insight into the role of the twist angle in the development of internal crystal fields and intrinsic electrostatic doping in heterostructures. Our results highligth the importance of layer alignment, beyond the existence of a moir\'e superlattice, to understand and simulate the intrinsic properties of a van der Waal heterostructure.

The electron antinuetrino flux limits are presented for the brightest gamma-ray burst (GRB) of all time, GRB221009A, over a range of 1.8-200 MeV using the Kamioka Liquid Scintillator Anti Neutrino Detector (KamLAND). Using a variety of time windows to search for electron antineutrinos coincident with the GRB, we set an upper limit on the flux under the assumption of various neutrino source spectra. No excess was observed in any time windows ranging from seconds to days around the event trigger time. The limits are compared to the results presented by IceCube., Comment: 8 pages, 3 figures, 1 table

The charge neutrality point of bilayer graphene, denoted as {\nu} = 0 state, manifests competing phases marked by spontaneously broken isospin (spin/valley/layer) symmetries under external magnetic and electric fields. However, due to their electrically insulating nature, identifying these phases through electrical conductance measurements remains challenging. A recent theoretical proposal introduces a novel approach, employing thermal transport measurements to detect these competing phases. Here, we experimentally explore the bulk thermal transport of the {\nu} = 0 state in bilayer graphene to investigate its ground states and collective excitations associated with isospin. While the theory anticipates a finite thermal conductance in the {\nu} = 0 state, our findings unveil an absence of detectable thermal conductance. Through variations in the external electric field and temperature-dependent measurements, our results suggest towards gapped collective excitations at {\nu} = 0 state. Our findings underscore the necessity for further investigations into the nature of {\nu} = 0.

The jet cross-section and jet-substructure observables in $p$$+$$p$ collisions at $\sqrt{s}=200$ GeV were measured by the PHENIX Collaboration at the Relativistic Heavy Ion Collider (RHIC). Jets are reconstructed from charged-particle tracks and electromagnetic-calorimeter clusters using the anti-$k_{t}$ algorithm with a jet radius $R=0.3$ for jets with transverse momentum within $8.0

Materials hosting flat electronic bands are a central focus of condensed matter physics as promising venues for novel electronic ground states. Two-dimensional (2D) geometrically frustrated lattices such as the kagome, dice, and Lieb lattices are attractive targets in this direction, anticipated to realize perfectly flat bands. Synthesizing these special structures, however, poses a formidable challenge, exemplified by the absence of solid-state materials realizing the dice and Lieb lattices. An alternative route leverages atomic orbitals to create the characteristic electron hopping of geometrically frustrated lattices. This strategy promises to expand the list of candidate materials to simpler structures, but is yet to be demonstrated experimentally. Here, we report the realization of frustrated hopping in the van der Waals (vdW) intermetallic Pd$_5$AlI$_2$, emerging from orbital decoration of a primitive square lattice. Using angle-resolved photoemission spectroscopy and quantum oscillations measurements, we demonstrate that the band structure of Pd$_5$AlI$_2$ includes linear Dirac-like bands intersected at their crossing point by a flat band, essential characteristics of frustrated hopping in the Lieb and dice lattices. Moreover, Pd$_5$AlI$_2$ is exceptionally stable, with the unusual bulk band structure and metallicity persisting in ambient conditions down to the monolayer limit. Our ability to realize an electronic structure characteristic of geometrically frustrated lattices establishes orbital decoration of primitive lattices as a new approach towards electronic structures that remain elusive to prevailing lattice-centric searches.

Cryogenic field-effect transistors (FETs) offer great potential for a wide range of applications, the most notable example being classical control electronics for quantum information processors. In the latter context, on-chip FETs with low power consumption are a crucial requirement. This, in turn, requires operating voltages in the millivolt range, which are only achievable in devices with ultra-steep subthreshold slopes. However, in conventional cryogenic metal-oxide-semiconductor (MOS)FETs based on bulk material, the experimentally achieved inverse subthreshold slopes saturate around a few mV/dec due to disorder and charged defects at the MOS interface. FETs based on two-dimensional materials offer a promising alternative. Here, we show that FETs based on Bernal stacked bilayer graphene encapsulated in hexagonal boron nitride and graphite gates exhibit inverse subthreshold slopes of down to 250 ${\mu}$V/dec at 0.1 K, approaching the Boltzmann limit. This result indicates an effective suppression of band tailing in van-der-Waals heterostructures without bulk interfaces, leading to superior device performance at cryogenic temperature., Comment: 22 pages, 18 figures

The optically dark states play an important role in the electronic and optical properties of monolayers (MLs) of semiconducting transition metal dichalcogenides. The effect of temperature on the in-plane-field activation of the neutral and charged dark excitons is investigated in a WSe$_2$ ML encapsulated in hexagonal BN flakes. The brightening rates of the neutral dark (X$^D$) and grey (X$^G$) excitons and the negative dark trion (T$^D$) differ substantially at a particular temperature. More importantly, they vanish considerably by about 3 -- 4 orders of magnitude with the temperature increased from 4.2 K to 100 K. The quenching of the dark-related emissions is accompanied by the two-order-of-magnitude increase in the emissions of their neutral bright counterparts, $i.e.$ neutral bright exciton (X$^B$) and spin-singlet (T$^S$) and spin-triplet (T$^T$) negative trions, due to the thermal activations of dark states. Furthermore, the energy splittings between the dark X$^D$ and T$^D$ complexes and the corresponding bright X$^B$, T$^S$, and T$^T$ ones vary with temperature rises from 4.2 K to 100 K. This can be explained in terms of the different exciton-phonon couplings for the bright and dark excitons stemming from their distinct symmetry properties., Comment: Main text: 6 pages, 4 figures. Supplementary: 5 pages, 4 figures

Transition metal dichalcogenides (TMD) like MoSe$_2$ exhibit remarkable optical properties such as intense photoluminescence (PL) in the monolayer form. To date, narrow-linewidth PL is only achieved in micrometer-sized exfoliated TMD flakes encapsulated in hexagonal boron nitride (hBN). In this work, we develop a growth strategy to prepare monolayer MoSe$_2$ on hBN flakes by molecular beam epitaxy in the van der Waals regime. It constitutes the first step towards the development of large area single crystalline TMDs encapsulated in hBN for potential integration in electronic or opto-electronic devices. For this purpose, we define a two-step growth strategy to achieve monolayer-thick MoSe$_2$ grains on hBN flakes. The high quality of MoSe$_2$ allows us to detect very narrow PL linewidth down to 5.5 meV at 13 K, comparable to the one of encapsulated exfoliated MoSe$_2$ flakes. Moreover, sizeable PL can be detected at room temperature as well as clear reflectivity signatures of A, B and charged excitons., Comment: 6 pages, 6 figures

The PHENIX experiment measured the centrality dependence of two-pion Bose-Einstein correlation functions in $\sqrt{s_{_{NN}}}=200$~GeV Au$+$Au collisions at the Relativistic Heavy Ion Collider at Brookhaven National Laboratory. The data are well represented by L\'evy-stable source distributions. The extracted source parameters are the correlation-strength parameter $\lambda$, the L\'evy index of stability $\alpha$, and the L\'evy-scale parameter $R$ as a function of transverse mass $m_T$ and centrality. The $\lambda(m_T)$ parameter is constant at larger values of $m_T$, but decreases as $m_T$ decreases. The L\'evy scale parameter $R(m_T)$ decreases with $m_T$ and exhibits proportionality to the length scale of the nuclear overlap region. The L\'evy exponent $\alpha(m_T)$ is independent of $m_T$ within uncertainties in each investigated centrality bin, but shows a clear centrality dependence. At all centralities, the L\'evy exponent $\alpha$ is significantly different from that of Gaussian ($\alpha=2$) or Cauchy ($\alpha=1$) source distributions. Comparisons to the predictions of Monte-Carlo simulations of resonance-decay chains show that in all but the most peripheral centrality class (50%-60%), the obtained results are inconsistent with the measurements, unless a significant reduction of the in-medium mass of the $\eta'$ meson is included. In each centrality class, the best value of the in-medium $\eta'$ mass is compared to the mass of the $\eta$ meson, as well as to several theoretical predictions that consider restoration of $U_A(1)$ symmetry in hot hadronic matter., Comment: 401 authors from 75 institutions, 23 pages, 15 figures, 2 tables. v2 is version accepted for publication by Physical Review C. HEPdata tables for the points plotted in figures for this and previous PHENIX publications are (or will be) publicly available at http://www.phenix.bnl.gov/papers.html

In transition metal dichalcogenide semiconductor monolayers the spin dynamics of electrons is controlled by the original spin-valley locking effect resulting from the interplay between spin-orbit interaction and inversion asymmetry. As a consequence, for electrons occupying bottom conduction bands, a carrier spin flip occurs only if there is a simultaneous change of valley. However, very little is known about the intra-valley spin relaxation processes. In this work we have performed stationary and time-resolved photoluminescence measurements in high quality WSe$_2$ monolayers. Our experiments highlight an efficient relaxation from bright to dark excitons, due to a fast intra-valley electron transfer from the top to the bottom conduction band with opposite spins. A combination of experiments and theoretical analysis allows us to infer a spin relaxation time of about $\tau_s\sim10~$ps, driven by the interplay between $\Gamma$-valley chiral phonons and spin-orbit mixing., Comment: 10 pages, 4 figures

We present a search for neutrinoless double-beta ($0\nu\beta\beta$) decay of $^{136}$Xe using the full KamLAND-Zen 800 dataset with 745 kg of enriched xenon, corresponding to an exposure of $2.097$ ton yr of $^{136}$Xe. This updated search benefits from a more than twofold increase in exposure, recovery of photo-sensor gain, and reduced background from muon-induced spallation of xenon. Combining with the search in the previous KamLAND-Zen phase, we obtain a lower limit for the $0\nu\beta\beta$ decay half-life of $T_{1/2}^{0\nu} > 3.8 \times 10^{26}$ yr at 90% C.L., a factor of 1.7 improvement over the previous limit. The corresponding upper limits on the effective Majorana neutrino mass are in the range 28-122 meV using phenomenological nuclear matrix element calculations., Comment: arXiv admin note: text overlap with arXiv:2203.02139

The optical emission spectra of semiconducting transition-metal dichalcogenide monolayers highlight fascinating recombination processes of charged excitons (trions). When charge tunable WSe$_2$ monolayers are moderately doped with electrons, a strong luminescence peak emerges just below the well-understood spectral lines associated with the recombination of negatively charged bright and dark trions. Despite previous investigations, its origin remains elusive. Here, we demonstrate that this luminescence peak is the result of electron-electron assisted recombination that brightens the dark trion emission. Supporting evidence for this second-order recombination process comes from identifying the brightened emission of positively charged dark trions when the monolayer is electrostatically doped with holes. Remarkably, the discovered hole-hole assisted luminescence peak emerges in the near infrared, about 500 meV below the well-studied spectral region of excitons and trions. In magneto-photoluminescence experiments we find that the $g$-factor of this new transition ($g$ = +4) has an opposite sign compared to the well-known $g$-factor of neutral or charged excitons. This allows us to propose a mechanism of brightening of the positively charged dark trion involving the $\Gamma$ valence band., Comment: 16 pages, 6 figures

We present a technique for integrating ultraclean carbon nanotubes into superconducting circuits, aiming to realize Josephson junctions based on one-dimensional elementary quantum conductors. This technique primarily involves depositing the nanotube in the final step, thus preserving it from the inherent contaminations of nanofabrication and maintaining contact solely with superconducting electrodes and a crystalline hBN substrate. Through transport measurements performed in both the normal and superconducting states, we demonstrate that our method yields high-quality junctions with Josephson energies suitable for quantum device applications, such as carbon nanotube-based superconducting qubits.

Magic-angle twisted bilayer graphene (MATBG) stands as one of the most versatile materials in condensed-matter physics due to its hosting of a wide variety of exotic phases while also offering convenient tunability. However, the fabrication of MATBG is still manual, and remains to be a challenging and inefficient process, with devices being highly dependent on specific fabrication methods, that often result in inconsistency and variability. In this work, we present an optimized protocol for the fabrication of MATBG samples, for which we use deterministic graphene anchoring to stabilize the twist-angle, and a careful bubble removal techniques to ensure a high twist-angle homogeneity. We use low-temperature transport experiments to extract the average twist-angle between pairs of leads. We find that up to 38 percent of the so fabricated devices show micrometer square sized regions with a twist-angle in the range 1.1 plus/minus 0.1 degrees, and a twist-angle variation of only 0.02 degrees, where in some instances such regions were up to 36 micrometer square large. We are certain that the discussed protocols can be directly transferred to non-graphene materials, and will be useful for the growing field of moire materials.

Graphene provides a unique platform for hosting high quality 2D electron systems. Encapsulating graphene with hexagonal boron nitride (hBN) to shield it from noisy environments offers the potential to achieve ultrahigh performance nanodevices, such as photodiodes and transistors. However, the absence of a bandgap at the Dirac point presents challenges for using this system as a useful transistor. In this study, we investigated the functionality of hBN-aligned monolayer graphene as a field effect transistor (FET). By precisely aligning the hBN and graphene, bandgaps open at the first Dirac point and at the hole-doped induced Dirac point via an interfacial moir\'e potential. To characterize this as a submicrometer scale FET, we fabricated a global bottom gate to tune the density of a conducting channel and a local top gate to switch off this channel. This demonstrated that the system could be tuned to an optimal on/off ratio regime by separately controlling the gates. These findings provide a valuable reference point for the further development of FETs based on graphene heterostructures.

Van der Waals heterostructures provide a versatile platform for tailoring electronic properties through the integration of two-dimensional materials. Among these combinations, the interaction between bilayer graphene and transition metal dichalcogenides (TMDs) stands out due to its potential for inducing spin-orbit coupling (SOC) in graphene. Future devices concepts require the understanding the precise nature of SOC in TMD/bilayer graphene heterostructures and its influence on electronic transport phenomena. Here, we experimentally confirm the presence of two distinct types of SOC, Ising (1.55 meV) and Rashba (2.5 meV), in bilayer graphene when interfaced with molybdenum disulphide, recognized as one of the most stable TMDs. Furthermore, we reveal a non-monotonic trend in conductivity with respect to the electric displacement field at charge neutrality. This phenomenon is ascribed to the existence of single-particle gaps induced by the Ising SOC, which can be closed by a critical displacement field. Remarkably, our findings also unveil sharp peaks in the magnetoconductivity around the critical displacement field, challenging existing theoretical models.

Recent experiments on magic-angle twisted bilayer graphene (MATBLG) indicate an unusual coexistence of heavy and light electrons, a characteristic of heavy-fermion physics. But a global transport measurement showing clear signatures of strong correlations like local moments (LM) arising from the flatbands is missing. Utilizing thermopower ($V_{Th}$) as a sensitive probe for measuring entropy ($S$), we have extensively studied $V_{Th}$ of MATBLG with filling ($\nu$), temperature ($T$) and magnetic field ($B$), and unveiled the presence of LM through their impact on $S$. While at high $T$, the behavior of $V_{Th}$ and resistance ($R$) are related by the Mott formula, it deviates at lower $T$. Below 120K apart from the Dirac point and full band filling, the resistance exhibits prominent peaks at integer fillings. The $V_{Th}$ however, remains featureless and symmetric across the DP with opposite signs. This disparity implies the dominance of different kinds of carriers in $V_{Th}$ and $R$. The $V_{Th}$ has additional sign changes at $\nu_{cross} \sim \pm 1$. The locations of $\nu_{cross}$ do not change with temperature from $5-60K$. For heavy and light band electrons, it can be shown that the doping profile of the $V_{Th}$, and hence $\nu_{cross}$ is highly sensitive to $T$, and therefore solely the contribution from band electrons does not explain the $V_{Th}$ data. Our data is consistent with the dominant contribution arising from the $S$ of the LMs. Additionally, we have investigated the effect of $B$ on the $V_{Th}$, both $B_{\parallel}$ and $B_{\perp}$ showing 30 and 50$\%$ reduction, respectively, and can be attributed to the partial polarization of the LMs (spin/valley), resulting in decreased $S$. Our $V_{Th}$ results highlight the contribution from LMs arising from flatbands, distinct from the band contributions of heavy and light fermions to the resistivity in MATBLG.

The superconducting (SC) state of magic-angle twisted bilayer graphene (MATBG) shows exceptional properties, as it consists of an unprecedentedly small electron (hole) ensemble of only ~ 10 power 11 carriers per square centimeter, which is five orders of magnitude lower than in traditional superconductors. This results in an ultra-low electronic heat capacity and kinetic inductance of this truly two-dimensional SC, and provides record-breaking key parameters for a variety of quantum sensing applications, in particular in thermal sensing and single photon detection (SPD), which traditionally exploit thermal effects in nanostructured superconducting thin films. In this work, we systematically study the interaction of the superconducting state of MATBG with individual light quanta. We discover full destruction of the SC state upon absorption of a single infrared photon even in a 16 square micrometer sized device, which showcases its exceptional bolometric sensitivity. Upon voltage biasing close to its critical current, we further show that this non-optimized device can be used as a SPD, whose click-rate is proportional to the number of absorbed photons, following Poissonian statistics. Our work offers insights into the MATBG-photon interaction and shows up pathways to use low-carrier density graphene-based superconductors as a new platform for developing revolutionary new quantum devices and sensors.

We report on the observation of the circular ratchet effect excited by terahertz laser radiation in a specially designed two-dimensional metamaterial consisting of a graphene monolayer deposited on a graphite gate patterned with an array of triangular antidots. We show that a periodically driven Dirac fermion system with spatial asymmetry converts the a.c. power into a d.c. current, whose direction reverses when the radiation helicity is switched. The circular ratchet effect is demonstrated for room temperature and a radiation frequency of 2.54 THz. It is shown that the ratchet current magnitude can be controllably tuned by the patterned and uniform back gate voltages. The results are analyzed in the light of the developed microscopic theory considering electronic and plasmonic mechanisms of the ratchet current formation., Comment: 10 pages, 8 figures, 2 tables

We use time-resolved nonlinear pump--probe measurements to reveal features of semiconductor moir\'e materials not accessible to linear spectroscopy. With an intense, red-detuned pump pulse, we generate a high density of virtual excitons or exciton--polarons in various moir\'e minibands. A broadband probe pulse in turn measures the response of all optical resonances induced by the pump-generated excitations. We generically observe a coherent blue shift originating from contact-like exciton--exciton interactions. At charge neutrality, these measurements allow us to assess the spatial overlap between different optical excitations and to observe signatures of a bound biexciton state between two different moir\'e exciton modes. In contrast to electron doped monolayers, spatially confined moir\'e attractive polarons behave as an ensemble of non-interacting two-level emitters, exhibiting an electron-density-independent ac-Stark effect. Tuning the pump laser into resonance with the attractive polaron, we demonstrate the filling of the moir\'e lattice with localized polarons and thereby realize a nonequilibrium Bose--Fermi mixture in moir\'e flat bands.

Extensive efforts have been undertaken to combine superconductivity and the quantum Hall effect so that Cooper-pair transport between superconducting electrodes in Josephson junctions is mediated by one-dimensional edge states. This interest has been motivated by prospects of finding new physics, including topologically-protected quasiparticles, but also extends into metrology and device applications. So far it has proven challenging to achieve detectable supercurrents through quantum Hall conductors. Here we show that domain walls in minimally twisted bilayer graphene support exceptionally robust proximity superconductivity in the quantum Hall regime, allowing Josephson junctions to operate in fields close to the upper critical field of superconducting electrodes. The critical current is found to be non-oscillatory and practically unchanging over the entire range of quantizing fields, with its value being limited by the quantum conductance of ballistic, strictly one-dimensional electronic channels residing within the domain walls. The system described is unique in its ability to support Andreev bound states at quantizing fields and offers many interesting directions for further exploration., Comment: 24 pages, 14 figures

Superconductivity (SC) in twisted bilayer graphene (tBLG) has been explored by varying carrier concentrations, twist angles, and screening strength, with the aim of uncovering its origin and possible connections to strong electronic correlations in narrow bands and various resulting broken symmetries. However, the link between the tBLG band structure and the onset of SC and other orders largely remains unclear. In this study, we address this crucial gap by examining in-situ band structure tuning of a near magic-angle ($\theta \approx0.95^\circ$) tBLG device with displacement field ($D$) and reveal remarkable competition between SC and other broken symmetries. At zero $D$, the device exhibits superconducting signatures without the resistance peak at half-filling, a characteristic signature with a strong electronic correlation. As $D$ increases, the SC is suppressed, accompanied by the appearance of a resistance peak at half-filling. Hall density measurements reveal that at zero $D$, SC arises around the van Hove singularity (vHs) from an isospin or spin-valley unpolarized band. At higher $D$, the suppression of SC coincides with broken isospin symmetry near half-filling with lifted degeneracy ($g_d \sim 2$). Additionally, as the SC phase becomes weaker with $D$, vHs shifts to higher fillings, highlighting the modification of the underlying band structure with the applied electric field. These findings, with recent theoretical study on SC in tBLG, highlight the competition, rather being connected concomitantly, between SC and other orders promoted by broken symmetries.

We report the observation of the terahertz-induced ratchet effect in graphene-based two-dimensional (2D) metamaterials. The metamaterial consists of a graphite gate patterned with an array of triangular antidots placed under a graphene monolayer. We show that the ratchet current appears due to the noncentrosymmetry of the periodic structure unit cell. The ratchet current is generated owing to the combined action of a spatially periodic in-plane electrostatic potential and a periodically modulated radiation electric field caused by near-field diffraction. The magnitude and direction of the ratchet current are shown to be controlled by voltages applied to both back and patterned gates, which change the lateral asymmetry, carrier type and density. The phenomenological and microscopic theories of ratchet effects in graphene-based 2D metamaterials are developed. The experimental data are discussed in the light of the theory based on the solution of the Boltzmann kinetic equation and the calculated electrostatic potential profile. The theory describes well all the experimental results and shows that the observed ratchet current consists of the Seebeck thermoratchet contribution as well as the linear contribution, which is sensitive to the orientation of the radiation electric field vector with respect to the triangles., Comment: 14 pages, 13 figures

This letter presents a non-local study on the electric field tunable edge transport in an hBN-encapsulated dual-gated Bernal stacked (ABA) trilayer graphene across various displacement fields ($D$) and temperatures ($T$). Our measurements revealed that the non-local resistance ($R_{NL}$) surpassed the expected classical ohmic contribution by a factor of at least two orders of magnitude. Through scaling analysis, we found that the non-local resistance scales linearly with the local resistance ($R_{L}$) only when the $D$ exceeds a critical value of $\sim0.2$ V/nm. Additionally, we observed that the scaling exponent remains constant at unity for temperatures below the bulk-band gap energy threshold ($T<25$ K). Further, the value of $R_{NL}$ decreases in a linear fashion as the channel length ($L$) increases. These experimental findings provide evidence for edge-mediated charge transport in ABA trilayer graphene under the influence of a finite displacement field. Furthermore, our theoretical calculations support these results by demonstrating the emergence of dispersive edge modes within the bulk-band gap energy range when a sufficient displacement field is applied., Comment: Accepted in Physical Review Letters

We report on the mechanism of energy transfer in van der Waals heterostructures of the two-dimensional semiconductor WS$_2$ and graphene with varying interlayer distances, achieved through spacer layers of hexagonal boron nitride (hBN). We record photoluminescence and reflection spectra at interlayer distances between 0.5 nm and 5.8 nm (0-16 hBN layers). We find that the energy transfer is dominated by states outside the light cone, indicative of a F\"orster transfer process, with an additional contribution from a Dexter process at 0.5 nm interlayer distance. We find that the measured dependence of the luminescence intensity on interlayer distances above 1 nm can be quantitatively described using recently reported values of the F\"orster transfer rates of thermalized charge carriers. At smaller interlayer distances, the experimentally observed transfer rates exceed the predictions and furthermore depend on excess energy as well as on excitation density. Since the transfer probability of the F\"orster mechanism depends on the momentum of electron-hole pairs, we conclude that at these distances, the transfer is driven by non-thermalized charge carrier distributions.

Quantum transport properties in molecularly thin perovskite/graphene heterostructure are experimentally investigated by Shubnikov-de Hass (SdH) oscillation and photo-resistance spectroscopy. We find an efficient charge transfer between the perovskite nanosheets and graphene, with a high hole concentration in graphene of up to $\rm \sim 2.8 \times 10^{13}\ cm^{-2}$. The perovskite layer also increases Fermi velocity lowering the effective mass of graphene from expected $\rm \sim 0.12\ m_e$ to $\rm \sim 0.08\ m_e$. Combining magneto-resistance and density functional theory calculations, we find that the carrier density in graphene significantly depends on the perovskite termination at the interface, affecting the charge transfer process and leading to a coexistence of regions with different doping. We also investigate the photo-response of the SdH oscillation under illumination. Using photo-resistance spectroscopy, we find evidence of photo-assisted transport across the perovskite layer between two graphene electrodes mediated by hot carriers in perovskite. Our results provide a picture to understand the transport behavior of 2D perovskite/graphene heterostructure and a reference for the controlled design of interfaces in perovskite optoelectronic devices.

The PHENIX experiment has performed a systematic study of identified charged-hadron ($\pi^\pm$, $K^\pm$, $p$, $\bar{p}$) production at midrapidity in $p$$+$Al, $^3$He$+$Au, Cu$+$Au collisions at $\sqrt{s_{_{NN}}}=200$ GeV and U$+$U collisions at $\sqrt{s_{_{NN}}}=193$ GeV. Identified charged-hadron invariant transverse-momentum ($p_T$) and transverse-mass ($m_T$) spectra are presented and interpreted in terms of radially expanding thermalized systems. The particle ratios of $K/\pi$ and $p/\pi$ have been measured in different centrality ranges of large (Cu$+$Au, U$+$U) and small ($p$$+$Al, $^3$He$+$Au) collision systems. The values of $K/\pi$ ratios measured in all considered collision systems were found to be consistent with those measured in $p$$+$$p$ collisions. However the values of $p/\pi$ ratios measured in large collision systems reach the values of $\approx0.6$, which is $\approx2$ times larger than in $p$$+$$p$ collisions. These results can be qualitatively understood in terms of the baryon enhancement expected from hadronization by recombination. Identified charged-hadron nuclear-modification factors ($R_{AB}$) are also presented. Enhancement of proton $R_{AB}$ values over meson $R_{AB}$ values was observed in central $^3$He$+$Au, Cu$+$Au, and U$+$U collisions. The proton $R_{AB}$ values measured in $p$$+$Al collision system were found to be consistent with $R_{AB}$ values of $\phi$, $\pi^\pm$, $K^\pm$, and $\pi^0$ mesons, which may indicate that the size of the system produced in $p$$+$Al collisions is too small for recombination to cause a noticeable increase in proton production., Comment: 480 authors from 78 institutions, 18 pages, 6 tables, 16 figures. v2 is version accepted for publication in Physical Review C. HEPdata tables for the points plotted in figures for this and previous PHENIX publications are (or will be) publicly available at http://www.phenix.bnl.gov/papers.html

We report intriguing and hitherto overlooked low-field room temperature extremely large magnetoresistance (XMR) patterns in graphene/hexagonal boron nitride (h-BN) superlattices that emerge due to the existence of open orbits within each miniband. This finding is set against the backdrop of the experimental discovery of the Hofstadter butterfly in moir superlattices, which has sparked considerable interest in the fractal quantum Hall regime. To cope with the challenge of deciphering the low magnetic field dynamics of moir minibands, we utilize a novel semi-classical calculation method, grounded in zero-field Fermi contours, to predict the nontrivial behavior of the Landau-level spectrum. This is compared with fully quantum simulations, enabling an in-depth and contrasted analysis of transport measurements in high-quality graphene-hBN superlattices. Our results not only highlight the primary observation of the open-orbit induced XMR in this system but also shed new light on other intricate phenomena. These include the nuances of single miniband dynamics, evident through Lifshitz transitions, and the complex interplay of semiclassical and quantum effects between these minibands. Specifically, we document transport anomalies linked to trigonal warping, a semiclassical deviation from the expected linear characteristics of Landau levels, and magnetic breakdown phenomena indicative of quantum tunneling, all effects jointly contributing to the intricacies of a rich electronic landscape uncovered at low magnetic fields., Comment: 5 figures

We perform infrared magneto-spectroscopy of Landau level (LL) transitions in dual-gated bilayer graphene. At $\nu=4$ when the zeroth LL (octet) is filled, two resonances are observed indicating the opening of a gap. At $\nu=0$ when the octet is half-filled, multiple resonances disperse non-monotonically with increasing displacement field, $D$, perpendicular to the sheet, showing a phase transition at modest displacement fields from a canted anti-ferromagnet (CAFM) to the layer-polarized state, with a gap that opens linearly in $D$. When $D=0$ and $\nu$ is varied, resonances at $\pm\nu$ show an electron-hole asymmetry with multiple line splittings as the octet is progressively filled. The $\nu=4$ data show good agreement with predictions from a mean-field Hartree-Fock calculation when accounting for multiple tight-binding terms in a four-band model of bilayer graphene. However even by incorporating a valley interaction anisotropy tuned to the CAFM ground state, only partial agreement is found at $\nu=0$. Our results suggest additional physics is required to understand bilayer graphene at half-filling.

Particle dark matter could belong to a multiplet that includes an electrically charged state. WIMP dark matter ($\chi^{0}$) accompanied by a negatively charged excited state ($\chi^{-}$) with a small mass difference (e.g. $<$ 20 MeV) can form a bound-state with a nucleus such as xenon. This bound-state formation is rare and the released energy is $\mathcal{O}(1-10$) MeV depending on the nucleus, making large liquid scintillator detectors suitable for detection. We searched for bound-state formation events with xenon in two experimental phases of the KamLAND-Zen experiment, a xenon-doped liquid scintillator detector. No statistically significant events were observed. For a benchmark parameter set of WIMP mass $m_{\chi^{0}} = 1$ TeV and mass difference $\Delta m = 17$ MeV, we set the most stringent upper limits on the recombination cross section times velocity $\langle\sigma v\rangle$ and the decay-width of $\chi^{-}$ to $9.2 \times 10^{-30}$ ${\rm cm^3/s}$ and $8.7 \times 10^{-14}$ GeV, respectively at 90% confidence level.

Twist-controlled moire superlattices (MS) have emerged as a versatile platform in which to realize artificial systems with complex electronic spectra. Bernal-stacked bilayer graphene (BLG) and hexagonal boron nitride (hBN) form an interesting example of the MS that has recently featured a set of unexpected behaviors, such as unconventional ferroelectricity and electronic ratchet effect. Yet, the understanding of the BLG/hBN MS electronic properties has, at present, remained fairly limited. Here we develop a multi-messenger approach that combines standard magnetotransport techniques with low-energy sub-THz excitation to get insights into the properties of this MS. We show that BLG/hBN lattice alignment results in the emergence of compensated semimetals at some integer fillings of the moire bands separated by van Hove singularities where Lifshitz transition occurs. A particularly pronounced semimetal develops when 8 electrons reside in the moire unit cell, where coexisting high-mobility electron and hole systems feature a strong magnetoresistance reaching 2350 % already at B=0.25 T. Next, by measuring the THz-driven Nernst effect in remote bands, we observe valley splitting, pointing to an orbital magnetization characterized by a strongly enhanced effective g-factor of 340. Last, using THz photoresistance measurements, we show that the high-temperature conductivity of the BLG/hBN MS is limited by electron-electron umklapp processes. Our multi-facet analysis introduces THz-driven magnetotransport as a convenient tool to probe the band structure and interaction effects in vdW materials and provides a comprehension of the BLG/hBN MS., Comment: 9 pages, 4 figures

Under high electrical current, some materials can emit electromagnetic radiation beyond incandescence. This phenomenon, referred to as electroluminescence, leads to the efficient emission of visible photons and is the basis of domestic lighting devices (e.g., light-emitting diodes). In principle, electroluminescence can lead to mid-infrared (mid-IR) emission of confined light-matter excitations called phonon-polaritons, resulting from the coupling of photons with crystal lattice vibrations (optical phonons). In particular, phonon-polaritons arising in the van der Waals crystal hexagonal boron nitride (hBN) exhibit hyperbolic dispersion, which enhances light-matter coupling. For this reason, electroluminescence of hyperbolic phonon-polaritons (HPhPs) has been proposed as an explanation for the peculiar radiative energy transfer within hBN-encapsulated graphene transistors. However, since HPhPs are confined, they are inaccessible in the far-field, so that any hint of electroluminescence is only based on indirect electronic signatures and needs to be confirmed by direct observation. Here, we demonstrate far-field mid-IR ({\lambda} = 6.5 {\mu}m) electroluminescence of HPhPs excited by strongly biased high-mobility graphene within a van der Waals heterostructure, and we quantify the associated radiative energy transfer through the material. The presence of HPhPs is revealed via far-field mid-IR spectroscopy due to their elastic scattering at discontinuities in the heterostructure. The associated radiative flux is quantified by mid-IR pyrometry of the substrate receiving the energy. This radiative energy transfer is shown to be reduced in hBN with nanoscale inhomogeneities, demonstrating the central role of the electromagnetic environment in this process., Comment: 32 pages including Extended Data and Supplementary Material (Main text: 7 pages, 4 figures)

A van der Waals heterostructure containing an atomically thin monolayer transition-metal dichalcogenide as a single-photon emitting layer is emerging as an intriguing solid-state quantum-photonic platform. Here, we report the utilization of spin-coating of silica nanoparticles for deterministically creating the spectrally isolated, energetically stable, and narrow-linewidth single-photon emitters in ML-WS$_2$. We also demonstrate that long-duration low-temperature annealing of the photonic heterostructure in the vacuum removes the energetically unstable emitters that are present due to fabrication-associated residue and lead to the emission of single-photons in a <25 nm narrowband visible spectral range centered at $\sim$620 nm. This work may pave the way toward realizing a hybrid-quantum-photonic platform containing a van der Waals heterostructure/device and an atomic-vapor system emitting/absorbing in the same visible spectral range., Comment: 5 figures

We have fabricated a 180$^\circ$-twisted bilayer ReSe$_2$ by stacking two centrosymmetric monolayer ReSe$_2$ flakes in opposite directions, which is expected to lose spatial inversion symmetry. By the second harmonic generation and angle-resolved photoemission spectroscopy, we successfully observed spatial inversion symmetry breaking and emergent band dispersions. The band calculation shows the finite lifting of spin degeneracy (~50 meV) distinct from natural monolayer and bilayer ReSe$_2$. Our results demonstrate that the spin-momentum locked state, which leads to spintronic functions and Berry-curvature-related phenomena, can be realized even with the stacking of centrosymmetric monolayers., Comment: 15 pages, 4 figures