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47. A Fault-Tolerant T-Type Multilevel Inverter Topology With Increased Overload Capability and Soft-Switching Characteristics.

Author

Jiangbiao He, Katebi, Ramin, Weise, Nathan, Demerdash, Nabeel A. O., and Lixiang Wei

Subjects
FAULT tolerance (Engineering), ELECTRIC inverters, TOPOLOGY, ELECTRICAL load, SWITCHING circuits, SHORT circuits, INSULATED gate bipolar transistors
Abstract

The performance of a novel three-phase four-leg fault-tolerant T-type inverter topology is introduced in this paper. This inverter topology provides a fault-tolerant solution to any open-circuit and certain short-circuit switching faults in the power devices. During any of the fault-tolerant operation modes for these device faults, there is no derating required in the inverter output voltage or output power. In addition, overload capability is increased in this new T-type inverter compared to that in the conventional three-level T-type inverter. Such increase in inverter overload capability is due to the utilization of the redundant leg for overload current sharing with other main phase legs under healthy condition. Moreover, if the redundant phase leg is composed of silicon carbide metal-oxide-semiconductor field-effect transistors, quasi-zero-voltage switching, and zero-current switching of the silicon insulated-gate bipolar transistors (IGBTs) in the conventional main phase legs can be achieved at certain switching states, which can significantly relieve the thermal stress on the outer IGBTs and improve the whole inverter efficiency. Simulation and experimental results are given to verify the efficacy and merits of this high-performance fault-tolerant T-type inverter topology. [ABSTRACT FROM PUBLISHER]

Published
2017
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48. A Fast On-Line Diagnostic Method for Open-Circuit Switch Faults in SiC-MOSFET-Based T-Type Multilevel Inverters.

Author

Jiangbiao He, Demerdash, Nabeel A. O., Weise, Nathan, and Katebi, Ramin

Subjects
ELECTRIC fault location, SWITCHING circuits, METAL oxide semiconductor field-effect transistors, SILICON carbide, ELECTRIC current converters, ELECTRIC power system reliability
Abstract

On-line condition monitoring is of paramount importance for multilevel power converters used in safety-critical applications. A novel on-line nonintrusive diagnostic method for detecting open-circuit switch faults in silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs)-based T-type multilevel converters is introduced in this paper. The principle of this method is based on monitoring the abnormal variations of the dc-bus neutral-point current in combination with the existing information on instantaneous switching states and phase currents. Advantages of this method include faster detection speed and simpler implementation compared to other existing diagnostic methods in the literature. Moreover, this diagnostic method is immune to the disturbances of inverter's dc-bus voltage unbalance and load unbalance. In this method, only one additional current sensor is required for measuring the dc-bus neutral-point current; therefore, the implementation cost is low. Simulation and experimental results based on a lab-scale 20 kVA adjustable speed drive with a three-level SiC T-type inverter validate the effectiveness and robustness of this novel diagnostic method. [ABSTRACT FROM PUBLISHER]

Published
2017
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