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The instability of perovskite optoelectronic devices remains a big barrier to their commercialization. The instability caused by external stimuli has been addressed by encapsulation, such as humidity, oxygen, heat, and ultraviolet light. However, the intrinsic instability of perovskite materials due to the lattice strain has not been fully addressed, which affects the physical properties and device performance to a great extent. Tuning the lattice strain by controlling the perovskite composition and ratio is an effective way to further develop efficient and stable devices. Herein, we prepare a series of triple-cation and mixed-halide (FAPbI

A balance between carrier density and carrier directional transport is achieved when the inorganic layer number n is 4, and thereby a high-efficiency perovskite single crystal horizontal photodetector is prepared.

Defect density is one of the most significant characteristics of perovskite single crystals (PSCs) that determines their optical and electrical properties, but few strategies are available to tune this property. Here, we demonstrate that voltage regulation is an efficient method to tune defect density, as well as the optical and electrical properties of PSCs. A three-step carrier transport model of MAPbBr3 PSCs is proposed to explore the defect regulation mechanism and carrier transport dynamics via an applied bias. Dynamic and steady-state photoluminescence measurements subsequently show that the surface defect density, average carrier lifetime, and photoluminescence intensity can be efficiently tuned by the applied bias. In particular, when the regulation voltage is 20 V (electrical poling intensity is 0.167 V μm−1), the surface defect density of MAPbBr3 PSCs is reduced by 24.27%, the carrier lifetime is prolonged by 32.04%, and the PL intensity is increased by 112.96%. Furthermore, a voltage-regulated MAPbBr3 PSC memristor device shows an adjustable multiresistance, weak ion migration effect and greatly enhanced device stability. Voltage regulation is a promising engineering technique for developing advanced perovskite optoelectronic devices., Perovskite devices: Digital memories thrive by tuning out defects Innovative materials gaining favor as replacements for silicon solar cells can also be transformed into memory logic circuits using a new fabrication procedure. Lead halide perovskites can be turned into optoelectronic devices through low-cost solution depositions, but these approaches often leave numerous charge-trapping defects in the perovskite. Weili Yu from China’s Changchun Institute of Optics and colleagues have now developed a technique for modifying the defect population of perovskite crystals without requiring chemical additives. The team used probes to apply an electric field to the surface of a perovskite sample for helping move injected charges into defect sites with a high degree of control, which further modulated the optical and electrical properties of perovskite sample. Optimized defect populations enabled the perovskite to act as memristor device, capable of activating multiple resistance states.

In this paper, we proposed a novel approach for rapid and flexible fabrication of self-driven microfluidic surface enhanced Raman scattering (SERS) chips for quantitative analysis of Hg2+ by femtosecond laser direct writing. In contrast to traditional microfluidic chips, the microchannels of the device can drive a liquid sample flow without external driving force. The sample flow speed is tunable since the wettability and capillarity properties of the channels, which depend on the roughness and the inner diameter of the microchannels, can be controlled by optimizing the laser processing parameters. The SERS active detection sites, which exhibit high enhancement effects and fine reproducibility, were integrated through the femtosecond laser-induced periodic surface structures (LIPSS), followed by 30 nm Ag deposition. The SERS performance of the as-prepared microfluidic SERS detection chip was studied with R6G as probe molecules. The quantitative analysis of Hg2+ was realized by simply injecting the Hg2+ sample and the probe molecules R6G from the two inlets, separately, and collecting the SERS signal at the detection site. The lowest detection limit for Hg2+ is 10-9 M. It should be mentioned that this study is not only limited to Hg2+ quantitative analysis, but is also mainly aimed to develop a new technique for the design and fabrication of novel self-driven microfluidic devices depending on practical application requirements.

This work was supported by the National Key Research and Development Program of China (Program No. 2018YFB1107202), the National Natural Science Foundation of China (Grant Nos. NSFC 61774155, 91750205, and 61705227), and the K. C. Wong Education Foundation (Grant No. GJTD-2018-08).

In this paper, we proposed a novel approach for rapid and flexible fabrication of self-driven microfluidic surface enhanced Raman scattering (SERS) chips for quantitative analysis of Hg

Carrier transfer is a key process for perovskite-based photoelectric conversion. It has a close relationship with grain boundaries, grain size, and contact layers. Understanding this relationship is of great significance for revealing the inherent characteristics of perovskite materials and for devices optimization. However, the dependence of carrier transfer characteristics (including carrier lifetime and mobility) on thickness is less studied, although which is a key issue for almost all perovskite material devices. Here we find that as the thickness of MAPbBr3 perovskite single crystal (PSC) increases from 1.47 μm to 10.55 μm, the carrier lifetime of MAPbBr3 decreases from 70 ns to 30 ns, and the carrier mobility decreases from 97 cm2 V−1 s−1 to 57 cm2 V−1 s−1, but they become constant in very thick samples. In addition, it was found that as the crystal thickness increased from 1.47 μm to 10.55 μm, the surface layer range gradually increased from 12 nm to 31 nm. The surface recombination velocity and surface defect (trap) density further confirmed that the thin PSC exhibited a small surface layer range. Finally, a three-layer carrier transmission model of PSC is proposed. This research provides guidance for the optimal design of PSC optoelectronic devices.