1. Thermoelectric study of crossroads material MnTe via sulfur doping.
- Author
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Wenjie Xie, Populoh, Sascha, Gałązka, Krzysztof, Xingxing Xiao, Sagarna, Leyre, Yufei Liu, Trottmann, Matthias, Jian He, and Weidenkaff, Anke
- Subjects
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THERMOELECTRICITY , *MANGANESE spectra , *SPECTRUM analysis , *TELLURIUM , *SCANNING electron microscopy , *X-ray powder diffraction , *SINTERING , *ELECTRIC conductivity , *SEEBECK coefficient - Abstract
Here, we report thermoelectric study of crossroads material MnTe via iso-electronic doping S on the Te-site. MnTe1-xSx samples with nominal S content of x=0.00, 0.05, and 0.10 were prepared using a melt-quench method followed by pulverization and spark plasma sintering. The X-ray powder diffraction, scanning electron microscopy, and ZAF-corrected compositional analysis confirmed that S uniformly substitutes Te up to slightly over 2%. A higher content of S in the starting materials led to the formation of secondary phases. The thermoelectric properties of MnTe1-xSx samples were characterized by means of Seebeck coefficient, electrical conductivity, and thermal conductivity measurements from 300K to 773K. Furthermore, Hall coefficient measurements and a single parabolic band model were used to help gain insights on the effects of S-doping on the scattering mechanism and the carrier effective mass. As expected, S doping not only introduced hole charge carriers but also created short-range defects that effectively scatter heat-carrying phonons at elevated temperatures. On the other hand, we found that S doping degraded the effective mass. As a result, the ZT of MnTe0.9S0.1 was substantially enhanced over the pristine sample near 400 K, while the improvement of ZT became marginal at elevated temperatures. A ZT~0.65 at 773K was obtained in all three samples. [ABSTRACT FROM AUTHOR]
- Published
- 2014
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