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The bulk photovoltaic effect (BPE) has drawn considerable attention due to its ability to generate photovoltages above the bandgap and reports of highly enhanced photovoltaic current when using nanoscale absorbers or nanoscale electrodes, which, however, do not lend themselves to practical, scalable implementation. Herein, it is shown that a strikingly high BPE photoresponse can be achieved in an ordinary thin-film configuration merely by tuning fundamental ferroelectric properties. Nonmonotonic dependence of the responsivity (RSC) on the ferroelectric polarization is observed and at the optimal value of the film polarization, a more than three orders of magnitude increase in the RSC from the bulk BaTiO3 value is obtained, reaching RSC close to 10−2 A W−1, the highest value reported to date for the archetypical ferroelectric BaTiO3 films. Results challenge the applicability of standard first-principles-based descriptions of BPE to thin films and the inherent weakness of BPE in ferroelectric thin films.

Lissajous figures are parametric equations that deconstruct into equations of simple harmonic motion. They were a source of inspiration by artists and mathematicians alike, well before the digital age, due to their esthetic forms and simple equations that could be easily deconstructed. Here for the first time in literature, we present Lissajous pattern analysis in the context of modern dance movement, thereby expanding the physical understanding of dance and redefining the creative choreographic process. Through the implementation of wearable sensors, specifically wireless accelerometers, we have collected movement data from professional dancers to serve as an additional lens to visualize dance in a novel way and to analyze dance mechanics. The resulting Lissajous figures from the movement phrases were used to both inform and inspire creativity in the choreographic process of the Artistic Director of the Bowen McCauley Dance Company to create a new piece of work entitled "Lissajous."

Ordering of ferroelectric polarization1 and its trajectory in response to an electric field2 are essential for the operation of non-volatile memories3, transducers4 and electro-optic devices5. However, for voltage control of capacitance and frequency agility in telecommunication devices, domain walls have long been thought to be a hindrance because they lead to high dielectric loss and hysteresis in the device response to an applied electric field6. To avoid these effects, tunable dielectrics are often operated under piezoelectric resonance conditions, relying on operation well above the ferroelectric Curie temperature7, where tunability is compromised. Therefore, there is an unavoidable trade-off between the requirements of high tunability and low loss in tunable dielectric devices, which leads to severe limitations on their figure of merit. Here we show that domain structure can in fact be exploited to obtain ultralow loss and exceptional frequency selectivity without piezoelectric resonance. We use intrinsically tunable materials with properties that are defined not only by their chemical composition, but also by the proximity and accessibility of thermodynamically predicted strain-induced, ferroelectric domain-wall variants8. The resulting gigahertz microwave tunability and dielectric loss are better than those of the best film devices by one to two orders of magnitude and comparable to those of bulk single crystals. The measured quality factors exceed the theoretically predicted zero-field intrinsic limit owing to domain-wall fluctuations, rather than field-induced piezoelectric oscillations, which are usually associated with resonance. Resonant frequency tuning across the entire L, S and C microwave bands (1-8 gigahertz) is achieved in an individual device-a range about 100 times larger than that of the best intrinsically tunable material. These results point to a rich phase space of possible nanometre-scale domain structures that can be used to surmount current limitations, and demonstrate a promising strategy for obtaining ultrahigh frequency agility and low-loss microwave devices.

Miniaturized piezoelectric/magnetostrictive contour‐mode resonators are effective magnetometers by exploiting the ΔE effect. With dimensions of ≈100–200 µm across and <1 µm thick, they offer high spatial resolution, portability, low power consumption, and low cost. However, a thorough understanding of the magnetic material behavior in these devices is lacking, hindering performance optimization. This manuscript reports on the strong, nonlinear correlation observed between the frequency response of these sensors and the stress‐induced curvature of the resonator plate. The resonance frequency shift caused by DC magnetic fields drops off rapidly with increasing curvature: about two orders of magnitude separate the highest and lowest frequency shift in otherwise identical devices. Similarly, an inverse correlation with the quality factor is found, suggesting a magnetic loss mechanism. The mechanical and magnetic properties are theoretically analyzed using magnetoelastic finite‐element and magnetic domain‐phase models. The resulting model fits the measurements well and is generally consistent with additional results from magneto‐optical domain imaging. Thus, the origin of the observed behavior is identified and broader implications for the design of nanomagnetoelastic devices are derived. By fabricating a magnetoelectric nanoplate resonator with low curvature, a record‐high DC magnetic field sensitivity of 5 Hz nT–1 is achieved. [ABSTRACT FROM AUTHOR]

We report on the high temperature thin film growth of BaTiO3 on Ti3C2Tx MXene flakes using van der Waals epitaxy on a degradable template layer. MXene was deposited on amorphous and crystalline substrates by spray- and dip-coating techniques, while the growth of BaTiO3 at 700 °C was accomplished using pulsed laser deposition in an oxygen rich environment. We demonstrate that the MXene flakes act as a temporary seed layer, which promotes highly oriented BaTiO3 growth along the (111) direction independent of the underlying substrate. The lattice parameters of the BaTiO3 films are close to the bulk value suggesting that the BaTiO3 films remains unstrained, as expected for van der Waals epitaxy. The initial size of the MXene flakes has an impact on the orientation of the BaTiO3 films with larger flake sizes promoting a higher fraction of the polycrystalline film to grow along the (111) direction. The deposited BaTiO3 film adopts the same morphology as the original flakes and piezoresponse force microscopy shows a robust ferroelectric behavior for individual grains. Transmission electron microscopy results indicate that the Ti3C2Tx MXene fully decomposes during the BaTiO3 deposition and the surplus Ti atoms are readily incorporated into the BaTiO3 film. Electrical measurements show a similar dielectric constant as a BaTiO3 film grown without the MXene seed layer. The demonstrated process has the potential to overcome the longstanding issue of integrating highly oriented complex oxide thin films directly on any desired substrate.