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In this paper, we have fabricated high-performance Si0.45Ge0.55 implant-free quantum well (IFQW) pFET with embedded SiGe source/drain stressor. This device showed high drive current of 1.28 mA/ \mu m at I_{\mathrm {\scriptstyle OFF}\_{D}} of 160 nA/ \mu $ m with channel length/width of 30 nm/0.16 $\mu $ m ( $V_{{\rm {DD}}} =-1$ V). Conventional ion-implanted extension is replaced with in situ boron-doped epitaxial Si0.75Ge0.25 layer. This enables lower process temperature which can maintain an integrity of Si0.45Ge0.55 film and thus higher hole mobility. In narrower width devices, we observed significant hole mobility boost ( $1.9\times $ improvement from active width of 10 to $0.1~\mu $ m). This is due to the relaxation of unwanted transverse stress in Si0.45Ge0.55 channel applied from Si substrate. IFQW devices show improved short channel control thanks to the epitaxially formed raised extension structure compared with conventional devices which have implanted extension. Achieved device performance is one of the best among all Si1–xGex-based channel pFET up to date. [ABSTRACT FROM AUTHOR]