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11. Production metrology of advanced metallization structures using XRR and WA-XRD

Author

Kay, Asaf, Tokar, Alex, Ha'Emek, Migdal, and Wormington, Matthew

Subjects
Copper -- Production processes -- Technology application, Semiconductor industry -- Production processes -- Technology application, Semiconductor industry, Technology application, Business, Electronics and electrical industries
Abstract

EXECUTIVE OVERVIEW The technology nodes of 45nm and beyond pose aggressive requirements on copper metallization processes. Barrier and seed layers become thinner; aspect ratios become higher. Barrier and Cu seed films must offer electrical continuity for the electroplating process and provide optimal Cu orientation for minimum resistance, while maintaining conformality with smooth morphology and no overhang [1]. These demands facilitate need for the thickness and structural characterization after seed/barrier manufacturing step. A solution is developed based on combination of x-ray reflectometry (XRR) and 2D wide angle x-ray diffraction (WA-XRD) techniques., As the semiconductor industry continues to evolve, much smaller and higher aspect ratio features are required for high performance or low power devices. For such devices, ^ copper has replaced [...]

Published
2010

15. Materials characterization for process integration of multi-channel gate all around (GAA) devices

Author

Muthinti, Gangadhara Raja, additional, Loubet, Nicolas, additional, Chao, Robin, additional, de la Peña, Abraham A., additional, Li, Juntao, additional, Guillorn, Michael A., additional, Yamashita, Tenko, additional, Kanakasabapathy, Sivananda, additional, Gaudiello, John, additional, Cepler, Aron J., additional, Sendelbach, Matthew, additional, Emans, Susan, additional, Wolfling, Shay, additional, Ger, Avron, additional, Kandel, Daniel, additional, Koret, Roy, additional, Lee, Wei Ti, additional, Gin, Peter, additional, Matney, Kevin, additional, and Wormington, Matthew, additional

Published
2017
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16. (Invited) Processing Technologies for Advanced Ge Devices

Author

Loo, Roger, primary, Hikavyy, Andriy Yakovitch, additional, Witters, Liesbeth, additional, Schulze, Andreas, additional, Arimura, Hiroaki, additional, Cott, Daire, additional, Mitard, Jerome, additional, Porret, Clement, additional, Mertens, Hans, additional, Ryan, Paul, additional, Wall, John, additional, Matney, Kevin, additional, Wormington, Matthew, additional, Favia, Paola, additional, Richard, Olivier, additional, Bender, Hugo, additional, Horiguchi, Naoto, additional, Collaert, Nadine, additional, and Thean, Aaron, additional

Published
2016
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17. Advanced in-line metrology strategy for self-aligned quadruple patterning

Author

Chao, Robin, additional, Breton, Mary, additional, L'herron, Benoit, additional, Mendoza, Brock, additional, Muthinti, Raja, additional, Nelson, Florence, additional, De La Pena, Abraham, additional, Le, Fee li, additional, Miller, Eric, additional, Sieg, Stuart, additional, Demarest, James, additional, Gin, Peter, additional, Wormington, Matthew, additional, Cepler, Aron, additional, Bozdog, Cornel, additional, Sendelbach, Matthew, additional, Wolfling, Shay, additional, Cardinal, Tom, additional, Kanakasabapathy, Sivananda, additional, Gaudiello, John, additional, and Felix, Nelson, additional

Published
2016
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18. Strain and Compositional Analysis of (Si)Ge Fin Structures Using High Resolution X-Ray Diffraction.

Author

Schulze, Andreas, Loo, Roger, Witters, Liesbeth, Mertens, Hans, Gawlik, Andrzej, Horiguchi, Naoto, Collaert, Nadine, Wormington, Matthew, Ryan, Paul, Vandervorst, Wilfried, and Caymax, Matty

Subjects
SILICON compounds, STRAINS & stresses (Mechanics), CRYSTAL structure, X-ray diffraction, TRANSISTORS
Abstract

The performance of heterogeneous 3D transistor structures critically depends on the composition and strain state of the buffer, channel, and source/drain regions. In this paper we discuss the value of in-line high resolution X-ray diffraction (HRXRD) measurements based on three representative examples. First, we analyzed the strain state of etched Ge fins in the two in-plane directions. We could verify a loss in channel strain after growth of a Si cap which we attribute to Ge reflow. Secondly, we studied the composition and strain state of relaxed SiGe fins selectively grown in an STI matrix where we found an anisotropic in-plane strain state with significantly reduced relaxation in the direction along the fin. Finally, we used HRXRD for the analysis of complex multilayer fin structures which are relevant for horizontal nanowire FETs that are candidates to replace FinFETs below the 7 nm technology node. With this example we could demonstrate that HRXRD is capable of providing insight into fin stress created by interlayer dielectrics (ILD0). [ABSTRACT FROM AUTHOR]

Published
2017
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23. Application of inline X-ray metrology for defect characterization of III-V/Si heterostructures

Author

Hung, P.Y., Wormington, Matthew, Matney, Kevin, Ryan, Paul, Dunn, Kathleen, Wang, Albert, Hill, Richard, Wong, Man Hoi, Price, Jimmy, Wang, Wei-E., Bersuker, Gennadi, Hung, P.Y., Wormington, Matthew, Matney, Kevin, Ryan, Paul, Dunn, Kathleen, Wang, Albert, Hill, Richard, Wong, Man Hoi, Price, Jimmy, Wang, Wei-E., and Bersuker, Gennadi

Abstract

High electron mobility III-V materials are strong candidates for nMOS transistors at the 11 nm technology node and beyond. Integrating III-V materials with Si (III-V/Si) is an attractive approach because it leverages the current Si-based manufacturing platform. However, the large lattice mismatch between III-V and Si leads to defects in the channel and compromises device performance and reliability. This paper explores two inline X-ray based characterization techniques, high resolution X-ray diffraction (HRXRD) and X-ray diffraction imaging (XRDI), to characterize defects in novel III-V/Si structures. The benefits and limitations of these techniques will be discussed. © The Electrochemical Society.

Published
2013

24. Materials characterization for process integration of multi-channel gate all around (GAA) devices

Author

Sanchez, Martha I., Ukraintsev, Vladimir A., Muthinti, Gangadhara Raja, Loubet, Nicolas, Chao, Robin, de la Peña, Abraham A., Li, Juntao, Guillorn, Michael A., Yamashita, Tenko, Kanakasabapathy, Sivananda, Gaudiello, John, Cepler, Aron J., Sendelbach, Matthew, Emans, Susan, Wolfling, Shay, Ger, Avron, Kandel, Daniel, Koret, Roy, Lee, Wei Ti, Gin, Peter, Matney, Kevin, and Wormington, Matthew

Published
2017
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26. Investigation of surface and sub‐surface damage in high quality synthetic diamonds by X‐ray reflectivity and grazing incidence in‐plane diffraction

Author

Bussone, Genziana, primary, Lafford, Tamzin A., additional, Masiello, Fabio, additional, Gibaud, Alain, additional, Carbone, Gerardina, additional, Schülli, Tobias U., additional, Connell, Simon H., additional, Rommeveaux, Amparo Vivo, additional, Wormington, Matthew, additional, and Härtwig, Jürgen, additional

Published
2011
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31. Asymmetric Relaxation of SiGe in Patterned Si Line Structures

Author

Wormington, Matthew, primary, Lafford, Tamzin, additional, Godny, Stéphane, additional, Ryan, Paul, additional, Loo, Roger, additional, Hikavyy, Andriy, additional, Bhouri, Nada, additional, Caymax, Matty, additional, Seiler, David G., additional, Diebold, Alain C., additional, McDonald, Robert, additional, Garner, C. Michael, additional, Herr, Dan, additional, Khosla, Rajinder P., additional, and Secula, Erik M., additional

Published
2007
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32. Off-Specular X-ray and Neutron Reflectometry for the Structural Characterization of Buried Interfaces

Author

Lavery, Kristopher A., primary, Prabhu, Vivek M., additional, Lin, Eric K., additional, Wu, Wen-li, additional, Satija, Sushil, additional, Wormington, Matthew, additional, Seiler, David G., additional, Diebold, Alain C., additional, McDonald, Robert, additional, Garner, C. Michael, additional, Herr, Dan, additional, Khosla, Rajinder P., additional, and Secula, Erik M., additional

Published
2007
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35. Accuracy and Repeatability of X-Ray Metrology.

Author

Bowen, D. Keith, Joyce, David, Ryan, Paul, and Wormington, Matthew

Subjects
METROLOGY, X-rays, MEASUREMENT, WEIGHTS & measures, PHYSICAL measurements, PHYSICAL sciences
Abstract

All metrology tools must make a trade-off between data quality and wafer throughput. Moreover, most X-ray metrology may be performed on regions inside the scribe lines. This paper discusses the appropriate choices of trade-offs for throughput, repeatability and spot size, choosing examples from silicon-germanium composition and thickness metrology. The repeatability varies from 0.7% to 0.1% 1σ with data collection cycles between 20 s and 1000 s. We show that for most of the parameters determined by X-rays the metrology is absolute, and that both accuracy and tool matching is achieved by traceable calibration of the X-ray wavelength and the angle encoders on the tools. Tool matching achieved by this absolute approach to metrology is typically 0.2% in thickness and 0.05% in composition for Si-20%Ge layers ∼ 50 nm thick. For 30 nm metal or dielectric layers measured within a 100 mm scribe line, 0.65% 1σ repeatability is achieved at 150 measurement points/hr and 0.33% at 75 sites/hr. © 2005 American Institute of Physics [ABSTRACT FROM AUTHOR]

Published
2005
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36. Full-Wafer Defect Identification using X-ray Topography.

Author

Bowen, D. Keith, Wormington, Matthew, Feichtinger, Petra, and Joyce, David E.

Subjects
*SEMICONDUCTOR defects, *SEMICONDUCTOR wafers, *X-rays
Abstract

The timely identification of defects can lead to increased yields and significant cost savings in wafer production. X-ray topography (XRT) is recognized as being a powerful tool for directly imaging defects in single crystals, such as semiconductor substrates and epitaxial thin-films. In XRT, defects are imaged by measuring changes in the diffracted X-ray intensity across a wafer due to strain and/or tilt that the defects introduce into the crystal lattice. We have developed a novel, high-speed digital XRT method for non-destructive defect characterization of up to 300mm diameter wafers. This method, called BedeScan™, offers substantial advantages to conventional topography, especially for rapid, convenient defect identification in a wafer manufacturing/processing environment. X-rays from a microfocus source are diffracted from a wafer, which is translated with fast, high-precision motions in front of a fixed CCD camera and a sequence of images is recorded. A virtual scan of the camera in the computer is undertaken to place each of these images at the correct position (x,y) in the final image. The final image contains impressions of defects across the full-wafer, e.g. mechanical edge damage, misfit dislocations and slip bands. This method allows a limited area detector to be used to image specimens of any size. It is possible to record a low-resolution full-wafer topograph with subsequent high-resolution, small-area topographs in regions of special interest. BedeScan™ also offers the ability to measure only the periphery of a wafer for quick mechanical edge defect recognition. Quantitative maps of specimen distortion, e.g. wafer bowing as a result of thermal processing, can also be produced. © 2003 American Institute of Physics [ABSTRACT FROM AUTHOR]

Published
2003
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37. Optical properties of pseudomorphic Ge1-xSnx (x=0 to 0.11) alloys on Ge(001).

Author

Medikonda, Manasa, Muthinti, Gangadhara R., Vasić, Relja, Adam, Thomas N., Reznicek, Alexander, Wormington, Matthew, Malladi, Girish, Yihwan Kim, Yi-Chiau Huang, and Diebold, Alain C.

Subjects
OPTICAL properties of germanium, GERMANIUM alloys, OPTOELECTRONIC devices, TRANSMISSION electron microscopy, SURFACE morphology, ATOMIC force microscopy
Abstract

The characterization of the optical properties of pseudomorphic Ge1-xSnx/Ge/Si (x=0 to 0.11) alloys from the IR to UV is presented. The Ge1-xSnx alloys were epitaxially grown on relaxed Ge grown on Si. Rutherford backscattering (RBS) and RBS ion channeling methods were used to confirm the Sn composition and substitutional nature of the Sn into the Ge lattice. The pseudomorphic nature of the Ge1-xSnx on Ge is confirmed using high resolution x-ray diffraction (HRXRD) and transmission electron microscopy. Although HRXRD reciprocal space maps indicated that the Ge1-xSnx was pseudomorphic to Ge, the shape of the Bragg peaks indicated that the sample surface was rough. The rough surface morphology is confirmed using atomic force microscopy. The complex dielectric function is reported in the IR, visible, and UV spectrum in the wavelength range of 0.2-5.06 eV. The E1, E1+Δ1, E2, and E0 critical points are extracted using second and third derivative line shape fitting and are compared with the elastic theory calculations of strained Ge1-xSnx(x=0 to 0.11) alloys and fully relaxed Ge1-xSnx (x=0 to 0.11) alloys. The E0 critical point energies are observed to have slightly larger values than those calculated for completely relaxed Ge1-xSnx alloys due to the presence of compressive strain. [ABSTRACT FROM AUTHOR]

Published
2014
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38. Combining metrology techniques for in-line control of thin SiGe:B layers.

Author

Cunff, Delphine Le, Nguyen, Thomas, Duru, Romain, Abbate, Francesco, Hoglund, Jonny, Laurentb, Nicolas, Pernot, Frederic, and Wormington, Matthew

Subjects
METROLOGY, SILICON, GERMANIUM, BORENIUM ions, NONMETALS
Abstract

A study performed to evaluate the benefits of combining techniques to improve the overall metrology of thin silicon germanium (SiGe) epitaxial layers doped with boron is presented. A specifically designed set of wafers was processed and measured by different in-line metrology tools and characterization techniques. This study describes the best strategy for combining metrology techniques in order to reliably determine dopant concentration and Ge composition measurement of the layers. It demonstrates that combined metrology enables key improvements in manufacturing and engineering environments. [ABSTRACT FROM AUTHOR]

Published
2014
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41. Application of Inline X-ray Metrology for Defect Characterization of III-V/Si Heterostructures

Author

Wormington, Matthew, Matney, Kevin, Ryan, Paul, Dunn, Kathleen, Wang, Albert, Hill, Richard, Wong, Hoi, Price, Jimmy, Wang, E, and Bersuker, Gennadi

Abstract

High electron mobility III-V materials are strong candidates for nMOS transistors at the 11 nm technology node and beyond. Integrating III-V materials with Si (III-V/Si) is an attractive approach because it leverages the current Si-based manufacturing platform. However, the large lattice mismatch between III-V and Si leads to defects in the channel and compromises device performance and reliability. This paper explores two inline X-ray based characterization techniques, high resolution X-ray diffraction (HRXRD) and X-ray diffraction imaging (XRDI), to characterize defects in novel III-V/Si structures. The benefits and limitations of these techniques will be discussed.

Published
2013

43. The Application of X-ray Metrology for Rapid Development of High-k Dielectrics

Author

Yee, Pui, Boscke, Tim, Wormington, Matthew, Lysaght, Pat, Kirsch, Paul, Tseng, Huang, and Jammy, Raj

Abstract

This study presents the application of X-ray metrology for phase engineering of high-k materials. In particular, grazing angle X-ray diffraction (GIXRD) is used to measure the phase and lattice constants of HfO2 doped with varying amounts of SiO2. Using the molar volume obtained from GIXRD as a guide, we narrow down the compositional range of SiO2 that exhibits a higher dielectric constant in device measurements. This scheme can be employed for screening dopants, optimizing composition, and reducing the typical development cycle from weeks to less than two hours.

Published
2008

44. In-Line Characterization of Heterojunction Bipolar Transistor Base Layers by High-Resolution X-Ray Diffraction

Author

Duy, Ngoc, Loo, Roger, Hikavyy, Andriy, Van, Benny, Ryan, Paul, Wormington, Matthew, and Hopkins, John

Abstract

The suitability of high-resolution X-ray diffraction (HRXRD) as an in-line measurement tool for the characterization of heterojunction bipolar transistor SiGe base layers and Si cap layers was investigated. We showed that despite of polycrystalline Si on the mask material of patterned wafers, HRXRD measurements performed on an array of small windows yield results which are comparable to those that were obtained on a window which is larger than the size of the source beam, regarding the thickness and the Ge content of the SiGe layers. The possibility to extract layer parameters for active device windows of different sizes was therefore demonstrated. The suitability of HRXRD for in-line measurement of the Si cap thickness was also assessed and the sensitivity of this technique for determining the substitutional boron concentration in SiGe was studied. The detection limit in the monitoring of the active dopant concentration was about 2.7 x 10^19 cm-3.

Published
2007

45. Advanced in-line metrology strategy for self-aligned quadruple patterning

Author

Sanchez, Martha I., Ukraintsev, Vladimir A., Chao, Robin, Breton, Mary, L'herron, Benoit, Mendoza, Brock, Muthinti, Raja, Nelson, Florence, De La Pena, Abraham, Le, Fee li, Miller, Eric, Sieg, Stuart, Demarest, James, Gin, Peter, Wormington, Matthew, Cepler, Aron, Bozdog, Cornel, Sendelbach, Matthew, Wolfling, Shay, Cardinal, Tom, Kanakasabapathy, Sivananda, Gaudiello, John, and Felix, Nelson

Published
2016
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47. The Application of X-ray Metrology for Rapid Development of High-k Dielectrics

Author

Hung, Pui Yee, Böscke, Tim, Wormington, Matthew, Bowen, D. K., Lysaght, Pat, Kirsch, Paul, Tseng, Hsing-Huang, and Jammy, Raj

Abstract

This study presents the application of X-ray metrology for phase engineering of high-k materials. In particular, grazing angle X-ray diffraction (GIXRD) is used to measure the phase and lattice constants of HfO2 doped with varying amounts of SiO2. Using the molar volume obtained from GIXRD as a guide, we narrow down the compositional range of SiO2 that exhibits a higher dielectric constant in device measurements. This scheme can be employed for screening dopants, optimizing composition, and reducing the typical development cycle from weeks to less than two hours.

Published
2008
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