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Objective: To solve the problems of low efficiency and poor motion stability of DELTA robots in the tomato sorting process of existing tomato processing production lines. Methods: Based on the analysis of the DELTA robot sorting system, the optimized gate shaped trajectory of the cyclotron was used for DELTA robot trajectory planning. By replacing the right angle part of the gate shaped trajectory with a convolutional line, an optimization model with the goal of time optimization was established. The optimized parameters of the gate shaped trajectory were solved using an improved ant colony optimization algorithm. Analyzed its performance through experiments. Results: The proposed method had better average sorting time and sorting success rate compared to the gate shaped trajectory and other methods, with an average sorting time reduction of 11.61% and 1.63%, respectively, and a sorting success rate increase of 2.05% and 0.56%. Conclusion: The proposed planning method effectively improves the sorting accuracy and efficiency of DELTA robots.

Background: The mortality rate of patients with traumatic brain injury (TBI) is still high even while undergoing decompressive craniectomy (DC), and the expensive treatment costs bring huge economic burden to the families of patients. Objective: The aim of this study was to identify preoperative indicators that influence patient outcomes and to develop a risk model for predicting patient mortality by a retrospective analysis of TBI patients undergoing DC. Methods: A total of 288 TBI patients treated with DC, admitted to the First Affiliated Hospital of Shantou University Medical School from August 2015 to April 2021, were used for univariate and multivariate logistic regression analysis to determine the risk factors for death after DC in TBI patients. We also built a risk model for the identified risk factors and conducted internal verification and model evaluation. Results: Univariate and multivariate logistic regression analysis identified four risk factors: Glasgow Coma Scale, age, activated partial thrombin time, and mean CT value of the superior sagittal sinus. These risk factors can be obtained before DC. In addition, we also developed a 3‐month mortality risk model and conducted a bootstrap 1000 resampling internal validation, with C‐indices of 0.852 and 0.845, respectively. Conclusions: We developed a risk model that has clinical significance for the early identification of patients who will still die after DC. Interestingly, we also identified a new early risk factor for TBI patients after DC, that is, preoperative mean CT value of the superior sagittal sinus (p <.05). [ABSTRACT FROM AUTHOR]

Ir-CoFeB-based synthetic antiferromagnets (SAFs) are potential candidates as the free layer of the next-generation magnetic tunnel junctions (MTJs) for high speed and density memories due to their perpendicular magnetic anisotropy and strong interlayer exchange coupling. However, the field-free spin–orbit torque (SOT) switching of Ir-CoFeB-based SAFs has rarely been reported, especially in the Co/Ir/CoFeB system with high anti-interference capability and being readily integrated with MTJs. In this paper, SOT-induced magnetization switching and SOT efficiency in Co/Ir/CoFeB SAFs with perpendicular anisotropy and tunable exchange coupling are systemically investigated. A full field-free switching of perpendicular Co/Ir/CoFeB SAFs is realized by depositing them onto crystal miscut Al2O3 substrates, which induce a tilted magnetic anisotropy. Furthermore, by introducing crystalline MgO or amorphous HfO2/SiO2 as the seed layers, the source of the tilted magnetic anisotropy was proved to be from the transverse asymmetry caused by the crystal miscut. Moreover, the crystal miscut enhances the SOT efficiency. The findings provide an approach to reliable field-free switching and high SOT efficiency of Ir-CoFeB-based SAFs for memories as well as logics with low power, fast speed, and high density. [ABSTRACT FROM AUTHOR]

L10-FePt distinguishes itself for its ultrahigh perpendicular magnetic anisotropy (PMA), enabling thermally stabile memory cells to scale down to 3 nm. The recently discovered “bulk” spin-orbit torques in L10-FePt provide an efficient and scalable way to manipulate the L10-FePt magnetization. However, the existence of an external field during the switching limits its practical application, and therefore field-free switching of L10-FePt is highly demanded. In this manuscript, by growing the L10-FePt film on vicinal MgO (001) substrates, we realize the field-free switching of L10-FePt. This method is different from previously established strategies as it does not need to add other functional layers or create asymmetry in the film structure. The dependence on the vicinal angle, film thickness, and growth temperature demonstrates a wide operation window for the field-free switching of L10-FePt. We confirm the physical origin of the field-free switching is due to the tilted anisotropy of L10-FePt induced by the vicinal surface. We also quantitatively characterize the spin-orbit torques in the L10-FePt films. Our results extend beyond the established strategies to realize field-free switching, and potentially could be applied to mass production. [ABSTRACT FROM AUTHOR]