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Abstract SnS:In thin films have been deposited on Mo substrates by chemical bath deposition method in acidic solution. The influences of different In-doped concentrations on the morphological, structural, optical properties and phase purities of SnS thin films have been investigated. Many sheet-like particles exist in the deposited SnS:In thin films. The doping of indium will decrease the thicknesses of the deposited thin films. The studies of photo-electrochemical (PEC) properties of SnS:In (In,10 at.%) thin films indicate that their PEC properties are enhanced by the annealing process. The fabrication of Pt/CdS/annealed SnS:In/Mo photocathode can further enhance the photo-current density to 0.790 mA·cm−2 at −0.4 V. Highlights • SnS:In thin films with sheet like morphology were deposited by CBD method. • The photo-electrochemical (PEC) properties of SnS:In thin films were studied. • In doping and annealing of SnS films enhanced photocurrent density of photocathodes. [ABSTRACT FROM AUTHOR]