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Superconductivity has been investigated for over a century, but there are still open questions about what determines the critical current; the maximum current a superconductor can carry before switching to its normal state. For a given superconductor, the zero-field critical current is widely believed to be determined by its inherent properties and be related to its critical magnetic field. Here, by studying superconducting polycrystalline films, single crystal flakes, and layered heterostructures, we find that the critical current of a superconductor can vary with measurement configuration. It can be influenced, or even determined, by adjacent superconducting segments along the applied current trajectory, whereas the critical magnetic field and critical temperature remain unaffected. This global critical current effect both reveals the need to revisit fundamental theory describing superconductivity, as well as implies that superconductors can transfer critical current related properties to each other. We demonstrate this by designing and fabricating a simple superconducting structure that transferred a superconducting diode effect from one segment to another segment which could not manifest the effect on its own. This observation merits a reconsideration of contemporary superconducting circuit design, and developing a full understanding will lead to a new paradigm of superconducting electronics., Comment: 14 pages, 4 figures

In this work, we proposed a new 3D integration technology: the Flip 3D integration (F3D), consisting of the 3D transistor stacking, the 3D dual-sided interconnects, the 3D die-to-die stacking and the dual-sided Monolithic 3D (M3D). Based on a 32-bit FFET RISCV core, besides the scaling benefits of the Flip FET (FFET), the dual-sided signal routing shows even more routing flexibility with 6.8% area reduction and 5.9% EDP improvement. Novel concepts of Multi-Flipping processes (Double Flips and Triple Flips) were proposed to relax the thermal budget constraints in the F3D and thus support the dual-sided M3D in the F3D. The core's EDP and frequency are improved by up to 3.2% and 2.3% respectively, after BEOL optimizations based on the Triple Flips compared with unoptimized ones., Comment: Accepted by EDTM 2025

Kagome materials are known to be an ideal platform that hosts a plethora of interesting phases such as topological states, electronic correlation, and magnetism, owing to their unique band structure and geometry. We report magnetotransport measurement in Kagome metal Yb$_{0.5}$Co_3Ge$_3$ as a function of pressure. Below $\sim25^\circ$ K the temperature dependence of resistance shows an upturn that is accompanied by a strong negative magnetoresistance, which could be attributed to Kondo effect. Upon pressurization above 1 GPa the resistance shows a reduction as a function of temperature below $4^\circ$ K, along with a further enhanced negative magnetoresistance. This might indicate an onset of a pressure-induced Kondo coherence effect.

Interface engineered ferroelectricity in van der Waals heterostructures is of broad interest both fundamentally and technologically for the applications in neuromorphic computing and so on. In particular, the moir\'e ferroelectricity in graphene/hexagonal boron nitride (hBN) heterostructures driven by charge ordering instead of traditional lattice displacement has drawn considerable attention because of its fascinating properties and promising high-frequency programmable electrical polarization switching. Yet, the underlying mechanism of the electronic ferroelectricity is still under debate. On the other hand, combining the interface engineered ferroelectricity and strong correlations in moir\'e heterostructures could enable the realization of novel quantum states such as ferroelectric superconductivity and multiferroicity. Here we study the electronic transport properties of twisted double bilayer graphene (TDBLG), aligned with one of the neighbouring hBN. We observe a strong gating hysteresis and ferroelectric-like behaviour, as well as the electronic ratchet effect. We find that the top gate is anomalously screened. On the contrary, the back gate is anomalously doubly efficient in injecting charges into graphene, that is, the effective back gate capacitance is two times larger than its geometry capacitance. This unexpected gate-tunable capacitance causes a dramatic change of electric fields between forward and backward scans. The asymmetric gating behaviours and anomalous change in capacitance could be explained with a simple model involved with a spontaneous electric polarization between top hBN and graphene. Our work provides more insights into the mysterious ferroelectricity in graphene/hBN moir\'e heterostructures and paves the way to the understanding of the underlying mechanism., Comment: 20 pages, 13 figures

In this study, we propose two strategies to determine complex refractive indexes along armchair and zigzag axes for BP flakes, aiming in predicting angle-resolved polarized Raman (ARPR) intensity by explicitly considering birefringence, linear dichroism, and anisotropic cavity interference effects within multilayered structures. By leveraging this methodology, we have identified the intrinsic complex Raman tensors for phonon modes of BP flakes, independent of BP flake thickness (>20 nm). We also elucidated the flake thickness-dependent effective complex Raman tensor elements, allowing for precise prediction of the observed ARPR intensity profile for specific BP flake. This framework can be extended to other ALM flakes deposited on dielectric substrate to determine the Raman tensors for fully predicting their ARPR response., Comment: 6 pages, 4 figures

To ensure the proper functioning of the current and future electrical grid, it is necessary for Transmission System Operators (TSOs) to verify that energy providers comply with the grid code and specifications provided by TSOs. A lot of energy production are conntected to the grid through a power electronic inverter. Grid Forming (GFM) and Grid Following (GFL) are the two types of operating modes used to control power electronic converters. The choice of control mode by TSOs to avoid impacting the stability of the grid is crucial, as is the commitment to these choices by energy suppliers. This article proposes a comparison between commonplace machine learning algorithms for converter control mode classification: GFL or GFM. The classification is based on frequency-domain admittance obtained by external measurement methods. Most algorithms are able to classify accurately when the control structure belongs to the training data, but they fail to classify modified control structures with the exception of the random forest algorithm.

This paper derives closed-form solutions for grid-forming converters with power synchronization control (PSC) by subtly simplifying and factorizing the complex closed-loop models. The solutions can offer clear analytical insights into control-loop interactions, enabling guidelines for robust controller design. It is proved that 1) the proportional gains of PSC and alternating voltage control (AVC) can introduce negative resistance, which aggravates synchronous resonance (SR) of power control, 2) the integral gain of AVC is the cause of sub-synchronous resonance (SSR) in stiff-grid interconnections, albeit the proportional gain of AVC can help dampen the SSR, and 3) surprisingly, the current controller that dampens SR actually exacerbates SSR. Controller design guidelines are given based on analytical insights. The findings are verified by simulations and experimental results.

Power flow oscillations can occur in power systems after major disturbances such as system faults, which may result in significant power swings and even lead to system collapse. This paper provides a detailed analysis of the efficacy of the legacy power swing blocking and out-of-step tripping functions in grid-following voltage-source converter (GFL-VSC) systems. First, the power swing dynamics of GFL-VSC are characterized, considering the outer power control loops and phase-locked loop (PLL). It is found that the loss of synchronism (LOS) of the GFL-VSC system is caused by the divergence of the output angle of the PLL, which is fundamentally different from that of synchronous generator (SG)-based systems, whose LOS originates from the divergence of power angle differences between power sources. Therefore, the legacy setting principles for power swing blocking and out-of-step tripping function designed for SG-based systems can not be directly applied to GFL-VSC systems, and may even malfunction. Time-domain simulations are performed in the PSCAD/EMTDC platform to validate the correctness of the theoretical analysis.

In solid materials, nontrivial topological states, electron correlations, and magnetism are central ingredients for realizing quantum properties, including unconventional superconductivity, charge and spin density waves, and quantum spin liquids. The Kagome lattice, made up of connected triangles and hexagons, can host these three ingredients simultaneously and has proven to be a fertile platform for studying diverse quantum phenomena including those stemming from the interplay of these ingredients. In this review, we introduce the fundamental properties of the Kagome lattice as well as discuss the complex observed phenomena seen in several emergent material systems such as the intertwining of charge order and superconductivity in some Kagome metals, modulation of magnetism and topology in some Kagome magnets, and symmetry breaking with Mott physics in the breathing Kagome insulators. We also highlight many open questions in the field as well as future research directions of Kagome systems.

The direct integration of GaN with Si can boost great potential for low-cost, large-scale, and high-power device applications. However, it is still challengeable to directly grow GaN on Si without using thick strain relief buffer layers due to their large lattice and thermal-expansion-coefficient mismatches. In this work, a GaN/Si heterointerface without any buffer layer is successfully fabricated at room temperature via surface activated bonding (SAB). The residual stress states and interfacial microstructures of GaN/Si heterostructures were systematically investigated through micro-Raman spectroscopy and transmission electron microscopy. Compared to the large compressive stress that existed in GaN layers grown-on-Si by MOCVD, a significantly relaxed and uniform small tensile stress was observed in GaN layers bonded-to-Si by SAB; this is mainly ascribed to the amorphous layer formed at the bonding interface. In addition, the interfacial microstructure and stress states of bonded GaN/Si heterointerfaces was found can be significantly tuned by appropriate thermal annealing. This work moves an important step forward directly integrating GaN to the present Si CMOS technology with high quality thin interfaces, and brings great promises for wafer-scale low-cost fabrication of GaN electronics., Comment: 15 pages, 3 figures

Graphene is an ideal platform to study the coherence of quantum interference pathways by tuning doping or laser excitation energy. The latter produces a Raman excitation profile that provides direct insight into the lifetimes of intermediate electronic excitations and, therefore, on quantum interference, which has so far remained elusive. Here, we control the Raman scattering pathways by tuning the laser excitation energy in graphene doped up to 1.05eV, above what achievable with electrostatic doping. The Raman excitation profile of the G mode indicates its position and full width at half maximum are linearly dependent on doping. Doping-enhanced electron-electron interactions dominate the lifetime of Raman scattering pathways, and reduce Raman interference. This paves the way for engineering quantum pathways in doped graphene, nanotubes and topological insulators., Comment: 18 pages, 4 figures

Grid-forming (GFM) capability requirements are increasingly imposed on grid-connected voltage-source converters (VSCs). Under large grid disturbances, GFM-VSCs need to remain stable while providing GFM services. Yet, such objectives, as pointed out in this paper, inherently lead to conflicting requirements on the dynamics of internal voltage source (IVS) of GFM-VSCs, i.e., the fast IVS dynamics is needed to avoid the loss of synchronism with the grid, whereas the slow IVS dynamics is preferred for maintaining GFM capability. To tackle this challenge, an adaptive fast/slow IVS control is proposed, which switches GFM-VSC between fast and slow IVS dynamics based on system needs. The proposed method enhances the transient stability of GFM-VSC, whilst maximizing its capability of providing GFM service. Further, the approach is robust to different grid strengths and different types of grid disturbances. The experimental results verify the theoretical findings and the effectiveness of the proposed control method.

The current ghost imaging phase reconstruction schemes require either complex optical systems, Fourier transform steps, or iterative algorithms, which may increase the difficulty of system design, cause phase retrieval error or take too much time. To address this problem, we propose a five-step phase-shifting method in which no complex optical systems, Fourier transform steps, or iterative algorithms are needed. With five designed incoherent sources, one can obtain five different corresponding ghost imaging patterns, then the phase information of the object can be calculated from those five speckle patterns. The applicability of this theoretical proposal is demonstrated via numerical simulations with two kinds of complicated objects, and the results illustrate the phase information of the complicated object can be reconstructed successfully and quantitatively.

Spectral camera based on ghost imaging via sparsity constraints (GISC spectral camera) obtains three-dimensional (3D) hyperspectral information with two-dimensional (2D) compressive measurements in a single shot, which has attracted much attention in recent years. However, its imaging quality and real-time performance of reconstruction still need to be further improved. Recently, deep learning has shown great potential in improving the reconstruction quality and reconstruction speed for computational imaging. When applying deep learning into GISC spectral camera, there are several challenges need to be solved: 1) how to deal with the large amount of 3D hyperspectral data, 2) how to reduce the influence caused by the uncertainty of the random reference measurements, 3) how to improve the reconstructed image quality as far as possible. In this paper, we present an end-to-end V-DUnet for the reconstruction of 3D hyperspectral data in GISC spectral camera. To reduce the influence caused by the uncertainty of the measurement matrix and enhance the reconstructed image quality, both differential ghost imaging results and the detected measurements are sent into the network's inputs. Compared with compressive sensing algorithm, such as PICHCS and TwIST, it not only significantly improves the imaging quality with high noise immunity, but also speeds up the reconstruction time by more than two orders of magnitude.

Structured (tabular) data in the preclinical and clinical domains contains valuable information about individuals and an efficient table-to-text summarization system can drastically reduce manual efforts to condense this data into reports. However, in practice, the problem is heavily impeded by the data paucity, data sparsity and inability of the state-of-the-art natural language generation models (including T5, PEGASUS and GPT-Neo) to produce accurate and reliable outputs. In this paper, we propose a novel table-to-text approach and tackle these problems with a novel two-step architecture which is enhanced by auto-correction, copy mechanism and synthetic data augmentation. The study shows that the proposed approach selects salient biomedical entities and values from structured data with improved precision (up to 0.13 absolute increase) of copying the tabular values to generate coherent and accurate text for assay validation reports and toxicology reports. Moreover, we also demonstrate a light-weight adaptation of the proposed system to new datasets by fine-tuning with as little as 40\% training examples. The outputs of our model are validated by human experts in the Human-in-the-Loop scenario.

The Kagome lattice is an important fundamental structure in condensed matter physics for investigating the interplay of electron correlation, topology, and frustrated magnetism. Recent work on Kagome metals in the AV3Sb5 (A = K, Rb, Cs) family, has shown a multitude of correlation-driven distortions, including symmetry breaking charge density waves and nematic superconductivity at low temperatures. Here we study the new Kagome metal Yb0.5Co3Ge3 and find a temperature-dependent kink in the resistivity that is highly similar to the AV3Sb5 behavior and is commensurate with an in-plane structural distortion of the Co Kagome lattice along with a doubling of the c-axis. The space group is found to lower from P6/mmm to P63/m below the transition temperature, breaking the in-plane mirror planes and C6 rotation, while gaining a screw axis along the c-direction. At very low temperatures, anisotropic negative magnetoresistance is observed, which may be related to anisotropic magnetism. This raises questions about the types of the distortions in Kagome nets and their resulting physical properties including superconductivity and magnetism.

The stability of multi-vendor, multi-terminal HVDC systems can be analyzed in frequency domain by black-box impedance models using the generalized Nyquist stability criterion. Based on the impedance stability analysis, a multi-level sensitivity analysis approach using frequency-domain sensitivity functions is proposed to identify the root cause of potential instability. Case studies on a four-terminal HVDC system are carried out for stability and sensitivity analysis based on the impedance measurement in PSCAD. The analysis results are finally validated by electromagnetic transient simulations.