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43 results on '"Wu, Mu-Shiang"'

6. Theoretical investigation of the SAW properties of ferroelectric film composite structures

Author

Shih, Wen-Ching and Wu, Mu-Shiang

Subjects
Ferroelectric devices -- Usage, Acoustic surface waves -- Analysis, Perovskite -- Analysis, Business, Electronics, Electronics and electrical industries
Abstract

Perovskite-type ferroelectric film can be utilized in ultra-high capacity dynamic random access memories, infrared detectors, surface acoustic waves devices and optical waveguide device applications. This ferroelectric film is effective in these applications because of its dielectric, ferroelectric, pyroelectric, piezoelectric, electro-optic and acousto-optic properties. The ferroelectric film also features a surface acoustic waves characteristic which is useful in the integration of various devices in the similar substrate.

Published
1998

40. Theoretical Study of Surface Acoustic Wave Propagation on KNbO3/MgO/GaAsLayered Structures

Author

Wen-Ching Shih, Wen-Ching Shih and Mu-Shiang Wu, Mu-Shiang Wu

Abstract

The propagation characteristics of surface acoustic waves (SAW) in KNbO3/MgO/GaAs structures were investigated theoretically. Phase velocities (vp) increase for all the different layered structures when the hKvalue of the MgO buffer layer increases from 0 to 0.25 for a specified thickness of the KNbO3film. The value of the coupling coefficient (K2) can be as high as 13%. The KNbO3(110)[001]/MgO/GaAs layered structure with the interdigital transducer (IDT) located on top of the KNbO3film is a better choice for device fabrication if we select a coupling coefficient of 1% as a reference for comparison. The results could be beneficial for combining optical devices, semiconductor devices and SAW devices on the same GaAs substrate.

Published
1997
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41. Propagation Characteristics of Surface Acoustic Waves in KNbO3/SrTiO3/SiLayered Structures

Author

Mu-Shiang Wu, Mu-Shiang Wu and Wen-Ching Shih, Wen-Ching Shih

Abstract

The propagation characteristics of surface acoustic waves (SAWs) in KNObO3/SrTiO3/Si structures were investigated theoretically. Phase velocities (vp) decrease when the hKvalue of the SrTiO3buffer layer increases from 0.04 to 0.2 for a specified thickness of the KNbO3film. The value of the coupling coefficient (K2) can be as high as 10%. A layered structure with the interdigital transducer (IDT) located on top of the KNbO3film is a better choice for device fabrication if we select a coupling coefficient of 1% as a reference for comparison. The results could provide useful information for combining optical devices, semiconductor devices and SAW devices on the same Si substrate.

Published
1997
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42. Effect of a Buffer Layer on the Surface Acoustic Wave Characteristics of Pb(Zr, Ti)O3Film/Buffer Layer/Semiconductor Substrate Structures

Author

Wen-Ching Shih, Wen-Ching Shih and Mu-Shiang Wu, Mu-Shiang Wu

Abstract

The effect of a buffer layer on the surface acoustic wave properties of Pb(Zr, Ti)O3(PZT) film/buffer layer/ semiconductor substrate structures was examined theoretically. Large coupling coefficients (2.8-3.4%) can be obtained when the interdigital transducer (IDT) is on top of the PZT film, with (type 4) and without (type 3) the floating-plane electrode at the PZT film-buffer layer interface. In the type 4 IDT configuration, there exists a minor peak of the coupling coefficient when the hKvalue of the PZT film is about 0.3. The minor peak values of the coupling coefficient (0.62-0.93%) decrease when we increase the thickness of the buffer layer from 0 to 0.25. These results could be useful for the further development of ferroelectric devices, semiconductor devices and SAW devices on the same substrate.

Published
1997
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43. Deposition of ZnO thin films on SiO2/Si substrate with Al2O3 buffer layer by radio frequency magnetron sputtering for high frequency surface acoustic wave devices

Author

Shih, Wen-Ching, Su, Hong-Yi, and Wu, Mu-Shiang

Subjects
*ZINC oxide thin films, *SILICA, *SUBSTRATES (Materials science), *ALUMINUM oxide, *RADIO frequency, *MAGNETRON sputtering, *SAPPHIRES, *ACOUSTIC surface wave devices
Abstract

Abstract: ZnO films with c-axis (0002) orientation have been grown on SiO2/Si substrates with an Al2O3 buffer layer by radio frequency magnetron sputtering. Crystalline structures of the films were investigated by X-ray diffraction, atomic force microscopy and scanning electron microscopy. The center frequency of the surface acoustic wave (SAW) device with a 4.8 μm thick Al2O3 buffer layer was measured to be about 408 MHz, which was much higher than that (265 MHz) of ZnO/SiO2/Si structure and approaches that (435 MHz) of ZnO/sapphire. It is a possible way as an alternative for the sapphire substrate for the high frequency SAW device applications, and is also useful to integrate the semiconductor and high frequency SAW devices on the same Si substrate. [Copyright &y& Elsevier]

Published
2009
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