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In this work, the ferroelectric characteristic of a 5 nm Hf0.5Zr0.5O2 (HZO) metal-ferroelectric-insulator-semiconductor (MFIS) device is enhanced through strained complementary metal oxide semiconductor (CMOS)-compatible TiN electrode engineering. Strained TiN top-layer electrodes with different nitrogen (N) concentrations are deposited by adjusting the sputtering process conditions. The TiN electrode with 18% N exhibits a compressive characteristic, which induces tensile stress in a 5 nm HZO film. A device with 18% N in TiN shows a higher remanent polarization (2Pr) and larger capacitance value than the compared sample, indicating that the strained TiN is promising for enhancing the ferroelectricity of sub-5 nm HZO devices.

Background Lung cancer ranks first in terms of incidence and mortality rates among cancers, with a 5-year survival rate of less than 20%. Many ways have been used to screen for early lung cancer, among which artificial intelligence (AI) has greatly improved the detection rate. However, how to use AI technologies to effectively manage atypical lung nodules to timely find early lung cancer, and to identify associated factors of lung nodule growth, which is an issue significantly associated with the guidance of clinical management of lung nodules. Objective To investigate the influencing factors of pulmonary nodules growth identified by AI-based follow-up and relevant clinical value. Methods A total of 175 patients with pulmonary nodules admitted to the Third Affiliated Hospital of Jinzhou Medical University in April 2019 were selected for a retrospective study. General clinical data, and AI-based analysis of imaging information related to pulmonary nodules was collected. The growth of pulmonary nodules〔solid nodules (in 82 cases) and ground-glass nodules (in 93 cases) classified by AI-based analysis〕 were observed by regular follow-ups. The influencing factors of pulmonary nodules growth were explored by Cox regression analysis. Results Patients with solid nodules had higher prevalence of solid components, and mean CT quantitative parameters of nodules than those with ground-glass nodules (P

This study presents a comprehensive investigation of the electrical properties of p-GaN gate HEMT devices under cryogenic operations, spanning a temperature range from 300 K all the way down to 10 K. We report achievement of a low sub-60 mV/dec sub-threshold swing (SS) (33.2 mV/dec at 10 K), a high ION/IOFF ratio (∼3.5 × 1010 at 10 K), and a remarkable I D , max (∼358 mA/mm at 10 K) in p-GaN gate HEMTs operating under cryogenic conditions. Furthermore, the mobility, threshold voltage shifts, and SS characteristics at cryogenic temperatures are modeled in p-GaN HEMTs. In summary, p-GaN gate HEMTs are promising for cryogenic applications due to their low SS, high gm,max, impressive ION/IOFF ratio, and substantial ID,max. Furthermore, the modeling achieved in this work can pave the way for future characteristic prediction in p-GaN HEMTs at cryogenic temperatures. [ABSTRACT FROM AUTHOR]

Nociceptors are key sensory receptors that transmit warning signals to the central nervous system in response to painful stimuli. This fundamental process is emulated in an electronic device by developing a novel artificial nociceptor with an ultrathin, nonstoichiometric gallium oxide (GaOx)‐silicon oxide heterostructure. A large‐area 2D‐GaOx film is printed on a substrate through liquid metal printing to facilitate the production of conductive filaments. This nociceptive structure exhibits a unique short‐term temporal response following stimulation, enabling a facile demonstration of threshold‐switching physics. The developed heterointerface 2D‐GaOx film enables the fabrication of fast‐switching, low‐energy, and compliance‐free 2D‐GaOx nociceptors, as confirmed through experiments. The accumulation and extrusion of Ag in the oxide matrix are significant for inducing plastic changes in artificial biological sensors. High‐resolution transmission electron microscopy and electron energy loss spectroscopy demonstrate that Ag clusters in the material dispersed under electrical bias and regrouped spontaneously when the bias is removed owing to interfacial energy minimization. Moreover, 2D nociceptors are stable; thus, heterointerface engineering can enable effective control of charge transfer in 2D heterostructural devices. Furthermore, the diffusive 2D‐GaOx device and its Ag dynamics enable the direct emulation of biological nociceptors, marking an advancement in the hardware implementation of artificial human sensory systems. [ABSTRACT FROM AUTHOR]