121 results on '"Wu, Wangran"'
Search Results
2. Comprehensive investigation on different ions of geostationary orbit induced single event burnout in GaN HEMT power devices
3. Study of the single-event burnout triggering criteria and hardening of the 550 V SOI lateral-IGBT
4. High-voltage Indium-Tin-Oxide Thin-film Transistors Possessing Drift Region Capped with Indium-Tin-Oxide Layer
5. High-Voltage Amorphous InGaZnO Thin-Film Transistors With ITO-Modulated Offset Region
6. Low-Frequency Noise in III–V, Ge, and 2D Transistors
7. Auxetic Black Phosphorus: A 2D Material with Negative Poisson's Ratio
8. Experimental investigation on total-ionizing-dose radiation effects on the electrical properties of SOI-LIGBT
9. Carboxymethylated Alginate-Resiquimod Micelles Reverse the Immunosuppressive Tumor Microenvironment and Synergistically Enhance the Chemotherapy and Immunotherapy for Gastric Cancer
10. Performance and Reliability Impact in Strained-Silicon n-LDMOS
11. A High Voltage Gain Inverter Integrated With Enhancement-and Depletion-Mode a-InGaZnO Thin-Film Transistors
12. A Monolithically Integrated Low-Dropout Regulator Based on a-InGaZnO TFTs with Ultralow Power Consumption
13. Gate length dependence of bias temperature instability behavior in short channel SOI MOSFETs
14. A 1-V Supply a-InGaZnO-Based Voltage Reference With Enhancement- and Depletion-Mode Thin-Film Transistors
15. High-Voltage Amorphous IGZO TFTs with a Drift Region Implemented by an Ultrathin ITO Capping Layer
16. 200-V ITO Thin-Film Transistors with the Stair-ITO Drift Region
17. Bilateral 60-V Amorphous InGaZnO Thin-Film Transistors With Symmetric Stair Gate Dielectric
18. High-Voltage a-IGZO Thin Film Transistor with the Symmetrical Stair Gate-Dielectric Structure
19. 400-V Amorphous IGZO Thin-Film Transistors With Drift Region Doped by Hydrogen
20. Comprehensive Investigation on Electrical Properties of Split-Gate Trench Power MOSFETs Under Mechanical Strains
21. High-Voltage a-IGZO TFTs With the Stair Gate-Dielectric Structure
22. Comprehensive Investigation on Electrical Properties of 4H-SiC VDMOS Under Uniaxial and Biaxial Mechanical Strains
23. Investigation on the Single-event Burnout and Hardening of the 500V SOI Lateral-IGBT
24. Experimental investigation on the single event gate rupture and hardening of the 600 V trench IGBT
25. Experimental Investigations on the Electrical Properties of 4H-SiC Power MOSFETs Under Biaxial and Uniaxial Mechanical Strains
26. Performance Boosts in n-Type Lateral Double-Diffused MOSFET With Process-Induced Strain Using Contact Etch Stop Layer Stressor
27. Experimental Investigation on the Electrical Properties of SOI-LIGBT Under Total-Ionizing-Dose Radiation
28. Experimental Investigations on the Electrical Properties of 4H-SiC Power MOSFETs Under Biaxial and Uniaxial Mechanical Strains.
29. Novel SJ-Mosfet With Disconnected P-Pillars For High Robustness
30. Hot-Carrier-Induced Degradation and Optimization for 700-V High-Voltage Lateral DMOS by the AC Stress
31. Reliability Concerns on LDMOS With Different Split-STI Layout Patterns
32. Mechanism and Novel Structure for di/dt Controllability in U-Shaped Channel Silicon-on-Insulator Lateral IGBTs
33. Comparative investigation into the interface passivation of Ge n- and p-MOSFETs with various 2D materials
34. Experimental Extraction of Ballisticity in Germanium Nanowire nMOSFETs
35. Repetitive-avalanche-induced Electrical Degradation and Optimization for 1.2kV 4H-SiC MOSFETs
36. Hot-Carrier-Induced Degradation and Optimization for Lateral DMOS With Split-STI-Structure in the Drift Region
37. Electrical Performances and Physics Based Analysis of 650V E-mode GaN Devices at High Temperatures
38. Electrical Degradations of p-GaN HEMT under High Off-state Bias Stress with Negative Gate Voltage
39. Experimental Investigation on the Electrical Properties of Lateral IGBT Under Mechanical Strain
40. Experimental Study on the Electrical Properties of Lateral IGBT Under the Mechanical Strain
41. Comprehensive Investigation on Electrical Properties of nLDMOS and pLDMOS Under Mechanical Strain
42. Failure Mechanism Investigations of Type II Short-Circuit in Trench Gate IGBT Device
43. Mobility Fluctuation-Induced Low-Frequency Noise in Ultrascaled Ge Nanowire nMOSFETs With Near-Ballistic Transport
44. ESD failure analysis and robustness improvement for multi-STI-finger LDMOS used as output device
45. Duty-cycle-accelerated hot-carrier degradation and lifetime evaluation for 700V lateral DMOS
46. Comprehensive investigation on mechanical strain induced performance boosts in LDMOS
47. Carrier Mobility Enhancement by Applying Back-Gate Bias in Ge-on-Insulator MOSFETs
48. Experimental Investigation of Ballistic Carrier Transport for Sub-100-nm Ge n-MOSFETs
49. Anomalous bias temperature instability on accumulation-mode Ge and III-V MOSFETs
50. Auxetic Black Phosphorus: A 2D Material with Negative Poisson’s Ratio
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.