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We investigate the optically detected magnetic resonance (ODMR) spectra and coherence times of divacancy spins in silicon carbide with a magnetic field orientation. Both the ODMR contrast and coherence time decrease with the magnetic field angle.

Optically addressable spin defects in silicon carbide (SiC) have emerged as attractable platforms for various quantum technologies. However, the low photon count rate significantly limits their applications. We strongly enhanced the brightness by 7 times and spin-control strength by 14 times of single divacancy defects in 4H-SiC membranes using surface plasmon generated by gold film coplanar waveguides. The mechanism of the plasmonic-enhanced effect is further studied by tuning the distance between single defects and the surface of the gold film. A three-energy-level model is used to determine the corresponding transition rates consistent with the enhanced brightness of single defects. Lifetime measurements also verified the coupling between defects and surface plasmons. Our scheme is low-cost, without complicated microfabrication and delicate structures, which is applicable for other spin defects in different materials. This work would promote developing spin defect-based quantum applications in mature SiC materials.

Spin defects in silicon carbide appear to be a promising tool for various quantum technologies, especially for quantum sensing. However, this technique has been used only at ambient pressure until now. Here, by combining this technique with diamond anvil cell, we systematically study the optical and spin properties of divacancy defects created at the surface of SiC at pressures up to 40 GPa. The zero-field-splitting of the divacancy spins increases linearly with pressure with a slope of 25.1 MHz/GPa, which is almost two-times larger than that of nitrogen-vacancy centers in diamond. The corresponding pressure sensing sensitivity is about 0.28 MPa/Hz

Precise generation of spin defects in solid-state systems is essential for nanostructure fluorescence enhancement. We investigated a method for creating single silicon vacancy defect arrays in silicon carbide using a helium-ion microscope. Maskless and targeted generation can be realized by precisely controlling the focused He+ ion beam with an implantation uncertainty of 60 nm. The generated silicon vacancies were identified by measuring the optically detected magnetic resonance spectrum and room temperature photoluminescence spectrum. We systematically studied the effects of the implantation ion dose on the generated silicon vacancies. After optimization, a conversion yield of ~ 6.95 % and a generation rate for a single silicon vacancy of ~ 35 % were realized. This work paves the way for the integration and engineering of color centers to photonic structures and the application of quantum sensing based on spin defects in silicon carbide.

Pressure is a significant parameter to investigate the properties of matter. The phenomenon of pressure-induced magnetic phase transition has attracted great interest due to its ability to detect superconducting behaviour at high pressures in diamond anvil cell. However, detection of the local sample magnetic properties is a great challenge due to the small sample chamber volume. Recently, in situ pressure-induced phase transition has been detected using optically detected magnetic resonance (ODMR) method of the nitrogen vacancies (NV) centers in diamond. However, the NV centers with four orientation axes and temperature-dependent zero-field-splitting present some difficulty to interpret the observed ODMR spectra. Here, we investigate and characterize the optical and spin properties of the implanted silicon vacancy defects in 4H-SiC, which is single-axis and temperature-independent zero-field-splitting. Using this technique, we observe the magnetic phase transition of a magnetic Nd2Fe14B sample at about 7 GPa. Finally, the critical temperature-pressure phase diagram of the superconductor YBa2Cu3O6.66 is mapped and refined. These experiments pave the way for the silicon vacancy-based quantum sensor being used in situ magnetic detection at high pressures.