Search

Your search keyword '"Wu, Xiao-Shan"' showing total 110 results
Start Over Author "Wu, Xiao-Shan"
110 results on '"Wu, Xiao-Shan"'

13. Acid‐sensing ion channel 1a mediates acid‐induced pyroptosis through calpain‐2/calcineurin pathway in rat articular chondrocytes

Author

Zu, Sheng‐Qin, primary, Feng, Yu‐Bin, additional, Zhu, Chuan‐Jun, additional, Wu, Xiao‐Shan, additional, Zhou, Ren‐Peng, additional, Li, Ge, additional, Dai, Bei‐Bei, additional, Wang, Zhi‐Sen, additional, Xie, Ya‐Ya, additional, Li, Yue, additional, Ge, Jin‐Fang, additional, and Chen, Fei‐Hu, additional

Published
2020
Full Text
View/download PDF

14. Corrigendum to “Interleukin-1β and tumor necrosis factor-α augment acidosis-induced rat articular chondrocyte apoptosis via nuclear factor-kappaB-dependent upregulation of ASIC1a channel” [Biochimica et Biophysica Acta 1864/1 (2018) 162–177]

Author

Zhou, Ren-Peng, primary, Dai, Bei-Bei, additional, Xie, Ya-Ya, additional, Wu, Xiao-Shan, additional, Wang, Zhi-Sen, additional, Li, Yue, additional, Wang, Zhi-Qiang, additional, Zu, Sheng-Qin, additional, Ge, Jin-Fang, additional, and Chen, Fei-Hu, additional

Published
2019
Full Text
View/download PDF

21. Preparation and Effect of Porous Silicon on The Surface of Silicon Solar Cells

Author

张凤鸣 Zhang Feng-ming, 林敏 Lin Min, and 吴小山 Wu Xiao-shan

Subjects
Radiation, Materials science, Silicon, business.industry, Nanocrystalline silicon, chemistry.chemical_element, Quantum dot solar cell, Condensed Matter Physics, Porous silicon, Polymer solar cell, Electronic, Optical and Magnetic Materials, Monocrystalline silicon, chemistry, Optoelectronics, business
Published
2013

47. MICROSTRUCTURES OF Zn,Ni,Mg DOPED La1.85Sr0.15CuO4 IN HIGH DOPING LEVEL

Author

Wang Feng-Zhong, Wu Xiao-Shan, and Jiang Shusheng

Subjects
Phase transition, Materials science, Rietveld refinement, Doping, Analytical chemistry, General Physics and Astronomy, Mineralogy, Condensed Matter::Materials Science, Tetragonal crystal system, Lattice constant, Impurity, Condensed Matter::Superconductivity, Condensed Matter::Strongly Correlated Electrons, Cuprate, Orthorhombic crystal system
Abstract

We successfully synthesized La 1.85 Sr 0.15 Cu 1- x M x O y ( M =Zn,Ni,Mg) with y ≤0\^30 ceramic cuprates. X\|ray diffraction studies show that there is no impurity phase in all Zn,Ni,Mg\|doped LSCO. Rietveld refinement technique is used to obtain the lattice constant,atomic position coordinates and reflection profile parameters for all samples. There is a tetragonal\|to\|orthorhombic phase transition in the range of 0.10 y 0.20 for Zn\|doped samples. No phase ransition occurs in Ni and Mg\|doped LSCO in the whole doping range in the accuracy of our experiments. There is a jump in lattice parameter c for Zn and Mg\|doped LSCO in the same doping range from y =0\^10 to y =0\^20, the relative change of atomic coordination of z for La(Sr) in La\|site and O in O(2) site also has a jump in Zn or Mg\|doped samples in the same doping range. The former may be due to the occurrence of T\|O Phase transition, and the latter may be due to the relative movement of atoms in the unit cell. This may indicate that there may exist a phase transition or large lattice microstrain. The fitted atomic parameters for Ni\|doped samples vary monotonically. In the assumption of Cauchy relation between machine broadening and physical broadening, the physical broadening of each reflection for each sample is obtained. In this way, we calculated the average microstrains for Zn, Ni and Mg\|doped samples. The variation of δ has a jump in Zn or Mg\|doped samples while δ vary monotonically in Ni\|doped samples.The jump may be related to the relative movements of each atom in the unit cell. This result is consistent with those obtained from the change of lattice parameters. The large changes of lattice parameters, relative atomic positions and microstrains may be related to the suppression of T c of the samples in superconducting state.

Published
2000

48. Study on Ni80Fe20/Al2O3/Co Magnetic Tunnel Junctions

Author

Long Jian-Guo, Chen Jing, Du Jun, Zhang Wei, Lu Mu, Wu Xiao-Shan, Pan Ming-Hu, Zhai Hong-Ru, and Hu An

Subjects
Materials science, Condensed matter physics, Magnetoresistance, Field (physics), General Physics and Astronomy, Plasma, Ohm, Layer (electronics), Quantum tunnelling, Magnetic field, Voltage
Abstract

With plasma oxidization to create an insulating layer of Al2O3, we have repeatedly fabricated some Ni80Fe20/Al2O3/Co magnetic tunnel junctions (MTJ), which show obvious tunneling magnetoresistance (TMR) effect. The insulating layer is well formed by the oxidization procedure, which is verified by optical spectra and other measurement results. At room temperature, the maximum TMR ratio reaches 6.0%. The switch field can be less than 800A/m and the relative step width is about 2400A/m. The junction resistance Rj changes from hundreds of ohms to hundreds of kilohms and TMR ratio decreases monotonously with the increase of applied junction voltage bias (under zero magnetic field).

Published
1999

Catalog

Books, media, physical & digital resources
See catalog results