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For gallium nitride (GaN) based triangular current mode (TCM) applications, the dead-time has a significant effect on the switching loss. However, previous GaN high electron mobility transistor (HEMT) models focus on the turn-on/off process without fully considering the effect of the dead-time. Hence, this article analyzes the switching transients under the superfluous and insufficient dead-time and evaluates the dead-time loss with an improved GaN HEMT model. The proposed model improves an existing GaN HEMT model by adding the voltage rising/falling time of the gate driver, the dynamic threshold voltage of Schottky-type GaN HEMTs, and an equivalent gate-drain capacitance obtained from the datasheet. Verified by a GaN-based double-pulse test, the proposed model can more accurately calculate the gate-source voltage and the self-commutated reverse conduction voltage. Verified by a GaN-based TCM Buck converter, the proposed model can predict the dead-time loss well and has higher simulation accuracy for the turn-on process induced by the inappropriate dead-time. [ABSTRACT FROM AUTHOR]

Data centers require high efficiency and high power-density dc–dc converter with wide input range and galvanic isolation. To overcome the drawbacks of traditional single-stage LLC and two-stage solutions, a novel partial power regulation topology with wide input range is proposed in this article. The proposed topology delivers the load power through a three-ports LLC-based dc transformer regulated DCX (DCX). A pulsewidth modulation (PWM) converter is cascaded with one of the input ports of the DCX and then in series with the other input port to regulate the output voltage. Since a single transformer and a partial power PWM converter are employed, high power density can be achieved. Furthermore, only a portion of the load power is transferred by the PWM converter, the efficiency sacrifice is reduced. By introducing an appropriate negative current, the zero voltage switching of the PWM is also achieved. Furthermore, when the input voltage approaches the lower or the upper limit, the switching frequency of the PWM regulator can be ultralow. As a result, switching losses and core losses are further reduced. Finally, a prototype with 190—475 V input and 12 V/500 W output is demonstrated, which achieves a peak efficiency of up to 97.2% and a power density of 153 W/in3. [ABSTRACT FROM AUTHOR]

Integrated buck-boost-LLC (IBBL) dcconverter is a good solution for high efficiency and high power density applications. However, the bridge leg integration causes asymmetrical zero-voltage-switching process and asymmetrical secondary current. The method of high quality factor or symmetric phase shift modulation proposed in the existing research can improve the asymmetrical current issue under heavy load, but is ineffective for light load conditions. This article proposes a novel Interleaved IBBL converter to improve the asymmetry issue for whole load range. Interleaving makes the secondary current be symmetric naturally. In addition, a comprehensive optimal design method for phase-shift angle and choke inductor is proposed to minimize the total power loss of all primary elements. A 600 W/1 MHz prototype verifies that the proposed IIBBL converter achieves symmetric secondary current in whole load range, and it achieves 95.7% efficiency and 180 W/in3 under the proposed comprehensive optimal design method. [ABSTRACT FROM AUTHOR]