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5. Indium phosphide on silicon heteroepitaxy: Lattice deformation and strain relaxation.

6. Characteristics of Ga0.51In0.49P/GaAs heterostructures grown on Si substrates by organometallic epitaxy.

7. Material properties of InP-on-Si grown by low-pressure organometallic vapor-phase epitaxy.

9. Growth and Characterization of p-InGaN/I-InGaN/n-GaN Double Heterojunction Solar Cells on Pattern Sapphire Substrates

10. Heteroepitaxial growth of InP on GaAs by low-pressure metalorganic chemical vapor deposition.

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