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9 results on '"X-rays Spectroscopy"'

1. High Sensitivity Pauli Exclusion Principle Tests by the VIP Experiment: Status and Perspectives.

Author

PISCICCHIA, K., BARTALUCCI, S., BERTOLUCCI, S., BAZZI, M., BORGHI, G., BRAGADIREANU, M., CAPOCCIA, C., CARGNELLI, M., CLOZZA, A., DEL GRANDE, R., DE PAOLIS, L., FIORINI, C., GUARALDO, C., ILIESCU, M., LAUBENSTEINI, M., MARTON, J., MILIUCCI, M., MILOTTI, E., NAPOLITANO, F., and PORCELLI, A.

Subjects
*GOVERNMENT laboratories, *ELECTRONS, *X-ray spectroscopy, *ATOMIC number
Abstract

The VIP Collaboration is performing high sensitivity tests of the Pauli exclusion principle for electrons in the extremely-low cosmic background environment of the Gran Sasso underground National Laboratory of INFN. In its open-systems configuration, the experiment checks the continuously renewed symmetry state of the conductive target, constantly supplied with electrons through a direct current. Consequently, VIP is operating the sole experiment challenging the spin-statistics connection in compliance with the Messiah-Greenberg superselection rule. The strongest bounds set by the VIP-2 experiment on the Pauli exclusion principle violation probability, by exploiting a copper target, will be reviewed. The future VIP-3 experiment will be presented, the aim of which is to map the Pauli exclusion principle violation probability as a function of the atomic number of the target under test. [ABSTRACT FROM AUTHOR]

Published
2022
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2. Structural and Electrical Characterization of Sputter-Deposited Gd0.1Ce0.9O2−δ Thin Buffer Layers at the Y-Stabilized Zirconia Electrolyte Interface for IT-Solid Oxide Cells

Author

Nunzia Coppola, Pierpaolo Polverino, Giovanni Carapella, Chiara Sacco, Alice Galdi, Alberto Ubaldini, Vincenzo Vaiano, Dario Montinaro, Luigi Maritato, and Cesare Pianese

Subjects
Solid Oxide Cells, Gadolinium Doped Ceria, RF magnetron Sputtering, Electrochemical Impedance Spectroscopy, X-rays Spectroscopy, Physical Vapour Deposition, Chemical technology, TP1-1185, Chemistry, QD1-999
Abstract

The use of a doped Ceria buffer layer and Physical Vapour Deposition (PVD) techniques for Solid Oxide Fuel Cells (SOFC) fabrication can limit the former, the formation of electrical insulating lanthanum, and strontium zirconates at the cathode/electrolyte interface, whereas the latter allows a better control of the materials interfaces. These effects allow for operation at intermediate temperature ranges. In this work, we study the structural and electrical properties of Gadolinium Doped Ceria (GDC) barrier layer deposited via the room temperature RF Sputtering technique on anode supported electrolytes and then annealed at high temperature. The crystal structure and the surface morphology of the GDC barrier layers have been analyzed and optimized varying the temperature ramp of the post-growth annealing procedure. The electrical behavior of the obtained samples has been investigated by Electrochemical Impedance Spectroscopy and compared to that of standard SOFC with screen-printed GDC barrier layers, the former showing a maximum high frequency and low frequency resistances reduction of about 50% and 46%, respectively, with respect to the latter at an operating temperature of 650 °C. The results clearly show an important improvement of SOFC performances when using sputter deposited GDC layers, linking the electrical properties to the structural and stoichiometric ones.

Published
2018
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3. XAFS-DET: A new high throughout X-ray spectroscopy detector system developed for synchrotron applications.

Author

Orsini, F., Aplin, S., Balerna, A., Bell, P., Casas, J., Cascella, M., Chatterji, S., Cohen, C., Dennis, G., Fajardo, P., Graafsma, H., Hirsemann, H., Iguaz, F.J., Klementiev, K., Kołodziej, T., Manzanillas, L., Martin, T., Menk, R., Porro, M., and Quispe, M.

Subjects
*X-ray spectroscopy, *GERMANIUM detectors, *DETECTORS, *SYNCHROTRON radiation, *SILICON detectors, *SYNCHROTRONS
Abstract

The high brilliance and coherent beams resulting from recent upgraded synchrotron radiation facilities open the way for a large range of experiments, where detectors play a key role in the techniques and methods developed to fully exploit the upgraded synchrotron. For instance, one of the major limitations of XAFS experiment is the performance of the detectors. In order to be able to measure more challenging samples and to cope with the very high photon flux of the current and future (diffraction limited) sources, technological developments of detectors are necessary. In this framework, the germanium detector developed in the European project LEAPS-INNOV aims at improving several technological aspects. This type of detector represents a very important class of instruments for X-ray spectroscopy due to the fact that they enable to detect efficiently photons of considerable higher energy with respect to silicon detectors. The objective of this project consists in pushing the detector performance beyond the state-of-the-art. Preliminary layout and main choices for the design studies of this new detector are presented in this paper. [ABSTRACT FROM AUTHOR]

Published
2023
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4. Structural and Electrical Characterization of Sputter-Deposited Gd0.1Ce0.9O2−δ Thin Buffer Layers at the Y-Stabilized Zirconia Electrolyte Interface for IT-Solid Oxide Cells

Author

Luigi Maritato, Vincenzo Vaiano, Dario Montinaro, Pierpaolo Polverino, Giovanni Carapella, Cesare Pianese, Alberto Ubaldini, Chiara Sacco, Alice Galdi, and Nunzia Coppola

Subjects
X-rays Spectroscopy, Materials science, Annealing (metallurgy), Oxide, 02 engineering and technology, Electrolyte, 010402 general chemistry, lcsh:Chemical technology, 01 natural sciences, Catalysis, Barrier layer, Solid Oxide Cells, RF magnetron Sputtering, lcsh:Chemistry, chemistry.chemical_compound, Electrochemical Impedance Spectroscopy, Sputtering, lcsh:TP1-1185, Physical and Theoretical Chemistry, Gadolinium-doped ceria, Physical Vapour Deposition, Gadolinium Doped Ceria, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Dielectric spectroscopy, Anode, Electrochemical impedance spectroscopy, Gadolinium doped ceria, Physical vapour deposition, RF magnetron sputtering, Solid oxide cells, X-rays spectroscopy, chemistry, Chemical engineering, lcsh:QD1-999, 0210 nano-technology
Abstract

The use of a doped Ceria buffer layer and Physical Vapour Deposition (PVD) techniques for Solid Oxide Fuel Cells (SOFC) fabrication can limit the former, the formation of electrical insulating lanthanum, and strontium zirconates at the cathode/electrolyte interface, whereas the latter allows a better control of the materials interfaces. These effects allow for operation at intermediate temperature ranges. In this work, we study the structural and electrical properties of Gadolinium Doped Ceria (GDC) barrier layer deposited via the room temperature RF Sputtering technique on anode supported electrolytes and then annealed at high temperature. The crystal structure and the surface morphology of the GDC barrier layers have been analyzed and optimized varying the temperature ramp of the post-growth annealing procedure. The electrical behavior of the obtained samples has been investigated by Electrochemical Impedance Spectroscopy and compared to that of standard SOFC with screen-printed GDC barrier layers, the former showing a maximum high frequency and low frequency resistances reduction of about 50% and 46%, respectively, with respect to the latter at an operating temperature of 650 &deg, C. The results clearly show an important improvement of SOFC performances when using sputter deposited GDC layers, linking the electrical properties to the structural and stoichiometric ones.

Published
2018

5. Soft X-rays spectroscopy with a commercial CMOS image sensor at room temperature

Author

Darío Federico Balmaceda, Jose Lipovetzky, Martin Perez, Mariano Gómez Berisso, J.J. Blostein, Miguel Sofo Haro, and Fabricio Alcalde Bessia

Subjects
Materials science, FRONT-SIDE ILLUMINATED, Image processing, CMOS IMAGE SENSORS (CIS), purl.org/becyt/ford/2.2 [https], 01 natural sciences, 030218 nuclear medicine & medical imaging, 03 medical and health sciences, 0302 clinical medicine, Optics, CHARGE TRANSPORT, 0103 physical sciences, Image sensor, Spectroscopy, CMOS ACTIVE PIXEL SENSOR (APS), Radiation, 010308 nuclear & particles physics, business.industry, Neutron imaging, X-RAYS SPECTROSCOPY, SINGLE-PHOTON, Semiconductor, INCOMPLETE CHARGE COLLECTION (ICC), purl.org/becyt/ford/2 [https], CMOS, Monochromatic color, CHARGE COLLECTION EFFICIENCY (CCE), business, Energy (signal processing)
Abstract

Besides their application in point and shoot cameras, webcams, and cell phones, it has been shown that CMOS image sensors (CIS) can be used for dosimetry, X-ray and neutron imaging applications. In this work we will discuss the application of an ON Semiconductor MT9M001 CIS, in low energy X-ray spectroscopy. The device is a monochromatic front-side illuminated sensor, very popular in consumer electronics. In this work we introduce the configuration selected for the mentioned sensor, the image processing techniques and event selection criteria, implemented in order to measure the X-ray energy in the range from 1-10 keV. Several fluorescence lines of different samples have been resolved, and for first time the line resolution have been measured and analyzed. We achieved a FWHM of 232 eV at 6.4 keV, and we concluded that incomplete charge collection (ICC) of the charge produced by the X-ray contributes to the resolution, being this effect more important at higher X-ray energies. The results analyzed in this work indicate that the mentioned CIS are specially suitable for X-ray applications in which energy and spatial resolutions are simultaneously required. Fil: Sofo Haro, Miguel Francisco. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina Fil: Alcalde Bessia, Fabricio Pablo. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina Fil: Pérez, Martín. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina Fil: Blostein, Juan Jeronimo. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina Fil: Balmaceda, Darío Federico. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina Fil: Gomez Berisso, Mariano. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina Fil: Lipovetzky, José. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina

Published
2020

6. Soft X-rays spectroscopy with a commercial CMOS image sensor at room temperature.

Author

Haro, Miguel Sofo, Bessia, Fabricio Alcalde, Pérez, Martín, Blostein, Juan Jerónimo, Balmaceda, Darío Federico, Berisso, Mariano Gomez, and Lipovetzky, José

Subjects
*CMOS image sensors, *X-ray spectroscopy, *IMAGE sensors, *TEMPERATURE sensors, *SOFT X rays, *X-ray imaging, *IMAGE processing
Abstract

Besides their application in point and shoot cameras, webcams, and cell phones, it has been shown that CMOS image sensors (CIS) can be used for dosimetry, X-ray and neutron imaging applications. In this work we will discuss the application of an ON Semiconductor MT9M001 CIS, in low energy X-ray spectroscopy. The device is a monochromatic front-side illuminated sensor, very popular in consumer electronics. In this work we introduce the configuration selected for the mentioned sensor, the image processing techniques and event selection criteria, implemented in order to measure the X-ray energy in the range from 1 to 10 keV. Several fluorescence lines of different samples have been resolved, and for first time the line resolution have been measured and analyzed. We achieved a FWHM of 232 eV at 6.4 keV, and we concluded that incomplete charge collection (ICC) of the charge produced by the X-ray contributes to the resolution, being this effect more important at higher X-ray energies. The results analyzed in this work indicate that the mentioned CIS are specially suitable for X-ray applications in which energy and spatial resolutions are simultaneously required. [ABSTRACT FROM AUTHOR]

Published
2020
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7. Structural and Electrical Characterization of Sputter-Deposited Gd0.1Ce0.9O2−δ Thin Buffer Layers at the Y-Stabilized Zirconia Electrolyte Interface for IT-Solid Oxide Cells.

Author

Coppola, Nunzia, Polverino, Pierpaolo, Carapella, Giovanni, Sacco, Chiara, Galdi, Alice, Ubaldini, Alberto, Vaiano, Vincenzo, Montinaro, Dario, Maritato, Luigi, and Pianese, Cesare

Subjects
*GADOLINIUM, *CERIUM oxides, *SOLID oxide fuel cells
Abstract

The use of a doped Ceria buffer layer and Physical Vapour Deposition (PVD) techniques for Solid Oxide Fuel Cells (SOFC) fabrication can limit the former, the formation of electrical insulating lanthanum, and strontium zirconates at the cathode/electrolyte interface, whereas the latter allows a better control of the materials interfaces. These effects allow for operation at intermediate temperature ranges. In this work, we study the structural and electrical properties of Gadolinium Doped Ceria (GDC) barrier layer deposited via the room temperature RF Sputtering technique on anode supported electrolytes and then annealed at high temperature. The crystal structure and the surface morphology of the GDC barrier layers have been analyzed and optimized varying the temperature ramp of the post-growth annealing procedure. The electrical behavior of the obtained samples has been investigated by Electrochemical Impedance Spectroscopy and compared to that of standard SOFC with screen-printed GDC barrier layers, the former showing a maximum high frequency and low frequency resistances reduction of about 50% and 46%, respectively, with respect to the latter at an operating temperature of 650 °C. The results clearly show an important improvement of SOFC performances when using sputter deposited GDC layers, linking the electrical properties to the structural and stoichiometric ones. [ABSTRACT FROM AUTHOR]

Published
2018
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9. Functional materials design. Characterization of hierarchical structures of pure and lanthanides doped ZnO

Author

Otal, Eugenio Hernán and Walsöe de Reca, Noemí Elizabeth

Subjects
SOFT-CHEMISTRY METHODS, HIERARCHICAL STRUCTURES, DIFRACCION DE RAYOS X, X-RAYS SPECTROSCOPY, COLLOIDAL CRYSTALS, ESTRUCTURAS JERÁRQUICAS, HR-TEM, PROPIEDADES TERMOELECTRICAS, NANOCCRYSTALLINE ZNO, ESPECTROSCOPIA DE RAYOS X, CRISTALES COLOIDALES, ZNO NANOCRISTALINO, SEM, TEM, X-RAYS DIFFRACTION, THERMOELECTRIC PROPERTIES, METODOS DE QUIMICA SUAVE, MICROSCOPÍA ELECTRONICA
Abstract

En este trabajo de tesis doctoral se estudian muestras nanocristalinas de ZnO puras y dopadas con lantánidos trivalentes (Erbio, Yterbio, Neodimio) de interés para el desarrollo de dispositivos termoeléctronicos. Inicialmente, se presenta un estudio de dos rutas de síntesis mediante dos métodos de química suave: hidrólisis forzada y precipitación. Estas dos rutas presentan diferencias en los tiempos de formación de aglomerados, en la estructura de éstos y la cantidad de dopate incorporado permitiendo obtener polvos nanocristalinos aglomerados, partículas coloidales esféricas nanoestructuradas, cristales coloidales con estructura jerárquica a varios niveles y películas nanoestructurados. Las muestras obtenidas fueron caracterizadas por análisis elemental, cuantificación de dopantes, área específica, espectroscopía infrarroja (FTIR) y UV-visible, microscopia electrónica de barrido (SEM) y transmisión (TEM), microscopia óptica, difracción de rayos X (DRX), espectroscopía de absorción de rayos X (XAS), medidas de transporte eléctrico y térmico y coeficiente Seebeck. Los resultados obtenidos por estas técnicas permitieron postular mecanismos para explicar la formación de los coloides nanoestructurados y la incorporación de dopantes en la estructura cristalina de ZnO. Por otra parte, se encontró que las muestras de ZnO con incorporación de Yb presentan una gran potencialidad para su utilización endispositivos termoeléctricos. Nanocrystalline specimen of pure and lanthanides (Er, Yb and Nd)-doped ZnO are studied in the research work of this doctoral thesis. At first, a study of two synthesis routes is presented using two soft chemistry methods: forced hydrolysis an precipitation. Both routes exhibit differences in the formation time of clusters, in their structure and dopant concentrations, enabling to get agglomerared nanocrystalline powders, nanostructured spherical colloidal particles and colloidal crystals with hierarchical structure ar several levels and nanoestructured films. Specimen were characterized by elemental chemical analysis, quantitative dopants analysis, specific area, infrared and UV-visible spectroscopies. Scanning Electron Microscopy (SEM). Transmission Electron Microscopy (TEM), High Resolution TEM, optical microscopy, X-rays diffraction (XRD), X-rays Absorption Sprectroscopy (XAS), measurements of electrical and thermal transport and Seebeck coefficients. The got results by these techniques, enabled to propose mechanisms to explain the formation of nanostructured colloids and the dopants inclusion in the ZnO structure. Otherwise, it was found that Yb-doped ZnO specimen exibited a considerable potentiality to be used in themoelectric devices. Fil: Otal, Eugenio Hernán. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina.

Published
2009

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