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Herein, via first‐principle calculations and theoretical analysis, a new Dirac semimetal carbon system called C32, which is composed of pentagonal, hexagonal, heptagonal, and octagonal carbon rings is systematically investigated. The stability of C32 is verified by calculating the phonon dispersion, elastic constants, etc., and an appropriate pathway for experimental synthesis is proposed. Besides, it is discovered that the system holds the quadruple rotation and inversion symmetry, resulting in the emergence of eight twisted Dirac cones (D1 and D2) with a highly anisotropic Fermi velocity from 3.83 × 105 to 8.96 × 105 m s−1 along different k directions. To substantiate the semimetallic nature of C32, its nontrivial topological properties are confirmed through the presence of topologically protected edge states, and the nonzero ℤ2 topological invariant. More importantly, by introducing biaxial strain, it is uncovered that Dirac cones can gradually evolve into a nodal line, and the perfect nodal line can be obtained when the biaxial strain is 13.3%. Furthermore, by constructing the tight‐binding model, the appearance of the Dirac cone is perfectly repeated and its evolution into the nodal line under biaxial strain is explained. [ABSTRACT FROM AUTHOR]

Spin current generation from charge current in nonmagnetic materials promises an energy-efficient scheme for manipulating magnetization in spintronic devices. In some asymmetric two-dimensional (2D) materials, the Rashba and valley effects coexist owing to strong spin–orbit coupling (SOC), which induces the spin Hall effect due to spin-momentum locking of both effects. Herein, we propose a new Janus structure MoSiAs2Se with both valley physics and the Rashba effect and reveal an effective way to modulate the properties of this structure. The results demonstrated that applying an external electric field is an effective means to modulating the electronic properties of MoSiAs2Se, leading to both type I–II phase transitions and semiconductor–metal phase transitions. Furthermore, the coexistence of the Rashba and valley effects in monolayer MoSiAs2Se contributes to the spin Hall effect (SHE). The magnitude and direction of spin Hall conductivity can also be manipulated with an out-of-plane electric field. Our results enrich the physics and materials of the Rashba and valley systems, opening new opportunities for the applications of 2D Janus materials in spintronic devices. [ABSTRACT FROM AUTHOR]

Spin current generation from charge current in nonmagnetic materials promises an energy-efficient scheme for manipulating magnetization in spintronic devices. In some asymmetric two-dimensional (2D) materials, the Rashba and valley effects coexist owing to strong spin-orbit coupling (SOC), which induces the spin Hall effect due to spin-momentum locking of both effects. Herein, we propose a new Janus structure MoSiAs 2 Se with both valley physics and the Rashba effect and reveal an effective way to modulate the properties of this structure. The results demonstrated that applying an external electric field is an effective means to modulating the electronic properties of MoSiAs 2 Se, leading to both type I-II phase transitions and semiconductor-metal phase transitions. Furthermore, the coexistence of the Rashba and valley effects in monolayer MoSiAs 2 Se contributes to the spin Hall effect (SHE). The magnitude and direction of spin Hall conductivity can also be manipulated with an out-of-plane electric field. Our results enrich the physics and materials of the Rashba and valley systems, opening new opportunities for the applications of 2D Janus materials in spintronic devices.