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Rituximab is a patient-paid effective monoclonal-antibody drug for non-Hodgkin lymphoma (NHL). Little is known in China, a country with unequal distribution of wealth and medical insurance systems, about the impact of socioeconomic status (SES) on selecting rituximab therapy in NHL patients. A total of 328 NHL inpatients in 2 public hospitals in Hangzhou were recruited and divided into 2 equal groups: with rituximab therapy and with no rituximab therapy group. Selection and frequency of rituximab therapy increased with duration of education and in urban citizens ( P < .01). Officers and businessmen were more likely to use rituximab therapy compared with farmers ( P < .01). Patients covered by Urban Employee Basic Medical Insurance were more likely to select rituximab therapy than those insured with Urban-Rural Residents Basic Medical Insurance ( P < .01). There was an inequality in provision of rituximab therapy among Chinese NHL patients, and this was associated with differences in SES status. Effective measures are suggested to ameliorate the inequality issue.

Soil erosion process, which is affected by both natural and artificial factors,is extremely complicated. This article selects SPOT5 remote sensing image, rainfall, DEM and soil data and other related material in the three gorges reservoir area in 1992 and the 2002, extracts soil erosion every environment factor information by using 3S technology, and makes stastical analyzation of the soil erosion of three gorges reservoir area, namely environmental topography, climate, soil, vegetation and land use; by combining the changing trend of the various factors with soil erosion intensity change in the three gorges reservoir area, obtains the correlation between various environmental factors and soil erosion in the three gorges reservoir area,and puts forward soil erosion control strategy in the three gorges reservoir area in the light of current condition of soil erosion, thus providing aided decision-making and support.for management department.

Lamellar eutectic solidification is very important in the development of new materials in which the periodic multiphase structures each may have a remarkable or enhanced functionality. The morphological instability during solidification may lead to various eutectic microstructures and greatly affect the physical and mechanical properties of final solidification products. In this paper, the morphological stability of lamellar eutectic growth with the anisotropic surface tension is studied by using the matched asymptotic expansion method and multiple variable expansion method. We assume that the process of solidification is viewed as a two-dimensional problem, The anisotropic surface tension is a four-fold symmetry function. The solute diffusion in the solid phase is negligible, and there is no convection in the system. On the basis of the basic state solution for the lamellar eutectic in directional solidification, the asymptotic solution for the perturbed interface shape of lamellar eutectic growth under the anisotropic surface tension is obtained in the case where the Peclet number is small, and then the quantization conditions of interfacial morphology for lamellar eutectic crystal is obtained. A dispersion relation between the wave number and the perturbation amplification rate, and the stability criterion of lamellar eutectic growth under the anisotropic surface tension are also obtained. The result shows that the anisotropic surface tension has a significant effect on lamellar eutectic growth in directional solidification. It shows that comparing the directional solidification system of isotropic surface tension, the interface morphological stability of anisotropic surface tension also involves two types of global instability mechanisms: the exchange of stability induced by the non-oscillatory, unstable modes and the global wave instability caused by four types of oscillatory unstable modes, namely antisymmetric antisymmetric (AA)-, symmetric antisymmetric (SA)-, antisymmetric symmetric (AS)-, and symmetric symmetric (SS)- modes. The linear stability analysis reveals that the stability of lamellar eutectic growth depends on stability critical number *. When *, the eutectic growth system is unstable; When q *, the eutectic growth system is stable. The anisotropic surface tension, by reducing the corresponding stability critical number *, stabilizes both the exchange of stability mechanism and the global instability mechanism for the AA-, SA- and SS-modes. It implies that the anisotropic surface tension parameter tends to reduce the stability zone. However, by increasing the corresponding stability critical number *, the anisotropic surface tension destabilizes the global instability mechanism for the AS-mode. It implies that the anisotropic surface tension parameter tends to increase the stability zone for AS-mode.

Defect-free zeolite NaA membranes were coated onto the surface of spherical Pt/Al2O3 particles using a two-step hydrothermal method. The structure and morphology of the synthesized composite catalysts were characterized using XRD and SEM techniques, respectively. The results indicated a layer of compact and uniform NaA molecular sieve membrane with a thickness of about 20 m was coated on the spherical Pt/Al2O3 particles after the two-step hydrothermal synthesis. The prepared NaA membrane coated catalysts were used in the oxidation of a mixture of CO and C2H4 to study the reactant selectivity over the coated zeolite NaA membranes. Under the optimized conditions, the oxidation selectivity for CO over C2H4 on the composite catalyst was as high as 96%. The feasible application of this composite membrane coated catalyst to the selective removal of CO in the presence of C2H4 was anticipated.

We report a systematical study on the molecular beam epitaxy growth and optical property of (GaAs1-xSbx/In-y Ga1-yAs)/GaAs bilayer quantum well (BQW) structures. It is shown that the growth temperature of the wells and the sequence of layer growth have significant influence on the interface quality and the subsequent photoluminescence (PL) spectra. Under optimized growth conditions, three high-quality (GaAsSb0.29/In0.4GaAs)/GaAs BQWs are successfully fabricated and a room temperature PL at 1314 nm is observed. The transition mechanism in the BQW is also discussed by photoluminescence and photoreflectance measurements. The results confirm experimentally a type-II band alignment of the interface between the GaAsSb and InGaAs layers.