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In this work, a series of red emitting Lu3Te2Li3O12: Eu3+ phosphors were synthesized for the first time by high temperature solid state reaction. The structure was characterized by X-ray diffraction. The excitation spectra, emission spectra and CIE chromaticity coordinate were studied. The phosphors show strong red emission at 611 nm due to the 5D0-7F2 transition of Eu3+ ions. The optimal doping concentration of Eu3+ in LTL host is x = 0.5 due to the concentration quenching mechanism of dipole-dipole interaction. The CIE chromaticity coordinates of the LTL: 0.5Eu3++ phosphor is (0.644,0.355), and the purity of the color is up to 93.61%. The phosphor can be considered as a potential red-emitting candidate for near UV WLEDs.

Chemical composition analysis, chromatography and spectroscopy are dominate quality evaluation methods for agarwood, which are cumbersome and time-consuming. To facilitate its quality evaluation, a global-to-local optimization method is proposed to automatically inspect the appearance of the burned agarwood stick. First, a dissimilarity coefficient is defined by the attributes of the connected domains to coarsely localize the carbon line region. Then, the threshold for the coarsely localized carbon line region is adaptively determined based on grayscale characteristics of image patches partitioned from the coarsely localized carbon line region. Next, the threshold is used to extract the contour of the carbon line region and to establish the fine localization model for locally and precisely localizing the carbon line region. Finally, an ash shrinkage compensation coefficient is defined to calculate the ash shrinkage rate (ASR). The ASR combined with carbon line height is utilized to characterize the appearance of burned agarwood. Experimental results indicate that the proposed inspection method can well detect the carbon line regions and ashes of burned agarwood sticks, with a mean ASR error of 0.74%, which is superior to some existing inspection methods. [ABSTRACT FROM AUTHOR]

As the core carrier of information storage, a semiconductor memory device is a basic product with a large volume that is widespread in the integrated circuit industry. With the rapid development of semiconductor manufacturing processes and materials, the internal structure of memory has gradually shifted from a 2D planar packaging structure to a 3D packaging structure to meet industry demands for high-frequency, high-speed, and large-capacity devices with low power consumption. However, advanced 3D packaging technology can pose some reliability risks, making devices prone to failure, especially when used in harsh environmental conditions, including temperature changes, high temperature and humidity levels, and mechanical stress. In this paper, the authors introduce the typical structure characteristics of 3D packaged memory; analyze the reasons for device failure caused by stress; summarize current research methods that utilize temperature, mechanical and hygrothermal theories, and failure models; and present future challenges and directions regarding the reliability research of 3D packaged memory. [ABSTRACT FROM AUTHOR]