Search

The present study aimed to investigate whether overexpression of integrin-linked kinase (ILK) affects drug resistance to temozolomide (TMZ) in glioma cells. To do this, a plasmid containing the ILK gene was transfected into the SHG‑44 human glioma cell line, and cells were subsequently cultured in the absence or presence of TMZ. The expression levels of ILK, multidrug resistance‑associated protein (MRP) and multi‑drug resistance protein (MDR) were assessed in these cells. Cell growth and apoptosis were measured by MTT and Hoechst staining, and flow cytometry, respectively. In addition, the expression levels of B‑cell lymphoma 2 (Bcl‑2) and Bcl‑2‑associated x protein (Bax), and caspase‑3 activity, were evaluated. The ILK‑overexpressing SHG‑44 cell was successfully constructed, and demonstrated increased expression levels of ILK, MDR and MRP compared with untransfected cells. Cell growth in the ILK+TMZ group was significantly greater, and the percentage of apoptotic cells in the ILK+TMZ group was significantly reduced, compared with the p enhanced green fluorescent protein (EGFP)‑C1+ TMZ empty vector control group. Expression levels of the anti‑apoptotic protein Bcl‑2 were significantly increased and those of the pro‑apoptotic protein Bax were significantly decreased (P

Mn3+ ions doped in YAG:Ce phosphors as a co-activator and host lattice element by co-precipitation method, which have enlarged the emission spectral of pure YAG:Ce phosphor in the emission spectral, caused by 5T2-5E and 5T2-1T2 transition. Respectively, the manganese co-doped yttrium aluminum garnet doped cerium blended with YAG:Ce phosphor would show an improved white light emission.

In this paper, a chopper-stabilized high-pass Delta-Sigma Modulator (DSM) is reported with experimental results. A new circuit technique to suppress the residual offset caused by the chopper switch charge injection is proposed. Enabled by an amplifier sharing architecture, the technique diverts the error charge generated by the critical chopper to the second stage of the modulator such that the resulted error becomes first-order high-pass shaped. Fabricated in a [email protected] CMOS technology, the 2nd-order DSM realizes 82dB dynamic range over a 1kHz bandwidth while consuming [email protected] from a 1.8V supply. The offset is [email protected] and the flicker noise is invisible in the measured output spectrum down to 4Hz. The core area of the chip is 0.16mm^2.