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Abstract: We report measurements on single electron memory devices where the memory island, a floating gate, is charged through aluminum oxide tunnel barriers, fabricated through plasma oxidation of aluminum and atomic layer deposition (ALD) of aluminum oxide. These devices are characterized at 300mK and show a definite threshold for tunneling through the oxide barriers indicating a potential for nonvolatile memory. [Copyright &y& Elsevier]

The challenge underlying superconducting quantum computing is to remove materials bottleneck for highly coherent quantum devices. The nonuniformity and complex structural components in the underlying quantum circuits often lead to local electric field concentration, charge scattering, dissipation and ultimately decoherence. Here we visualize interface dipole heterogeneous distribution of individual Al/AlOx/Al junctions employed in transmon qubits by broadband terahertz scanning near-field microscopy that enables the non-destructive and contactless identification of defective boundaries in nano-junctions at an extremely precise nanoscale level. Our THz nano-imaging tool reveals an asymmetry across the junction in electromagnetic wave-junction coupling response that manifests as hot (high intensity) vs cold (low intensity) spots in the spatial electrical field structures and correlates with defected boundaries from the multi-angle deposition processes in Josephson junction fabrication inside qubit devices. The demonstrated local electromagnetic scattering method offers high sensitivity, allowing for reliable device defect detection in the pursuit of improved quantum circuit fabrication for ultimately optimizing coherence times. To enhance the development of superior quantum circuits, the ability to detect defects accurately is crucial. The authors use broadband terahertz scanning near-field optical microscopy that enables the non-destructive and contactless identification of defective boundaries in nano-junctions employed in transmon qubits at an extremely precise nanoscale level. [ABSTRACT FROM AUTHOR]

InAs quantum dots (QDs) were grown on patterned Si substrates with a thin GaAs buffer using SiO2 as a mask by molecular beam epitaxy. GaAs was firstly selectively grown on the exposed Si surface with feature size around 250 nm. The InAs QDs were selectively grown on top of the GaAs. Low temperature photoluminescence (PL) measurements show strong optical activity in the wavelength range from 900 to 1050 nm. The temperature dependent measurement of the PL response indicates that, for temperatures over 110 K, the carrier escape from quantum dots leads to quenching of the signal. The PL results demonstrate that using nanostructures, it is possible to integrate high quality direct gap III-V materials on Si with high optical activity, leading to potentially new optoelectronic applications on Si and other convenient substrates which are lattice mismatched to InAs and other III-V materials. [ABSTRACT FROM AUTHOR]

[Display omitted] • All Nb films deposited on Si exhibit columnar growth with strong [1 1 0] textures. • The amorphous surface NbO x layer is dominated by Nb 2 O 5 with suboxide(s) • The amorphous NbO x decomposed into nanocrystalline FCC Nb in the amorphous NbO matrix. • The observed larger lattice parameter of FCC Nb is due to O at its interstitial sites. • The original metal-oxide interface remains almost unchanged after the heat treatment. Niobium is commonly used for superconducting quantum systems as readout resonators, capacitors, and interconnects. Structural defects at the Nb/Si and air/Nb interface may be a major source of two-level systems (TLS), which are detrimental to the device's coherence time. Thus, identifying and understanding the microscopic origin of possible TLS in Nb-based devices and their relationship to processing is key to superconducting qubit performance improvement. This work studied the structure and thermal stability of surface oxide on physical vapor deposited Nb films on Si wafers, using aberration-corrected (scanning) transmission electron microscopy and spectroscopy. All Nb films exhibit columnar growth with strong [1 1 0] textures. After in-situ heating of the heterostructure at 360 °C inside the microscope, the initial amorphous niobium surface oxides decompose into face-centered cubic Nb nanograins in the amorphous Nb-O matrix, which may reduce microwave dissipation. Despite changes in the microstructure and chemistry of the niobium oxide surface layer due to heat treatment, the interface between the Nb and the surface oxide layer remains almost unchanged. Our comprehensive study of the Nb surface oxide decomposition mechanism may guide future superconducting qubit device optimization through interfacial scattering center and TLS minimization. [ABSTRACT FROM AUTHOR]