738 results on '"Yakushev, M."'
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2. Temperature Dependence of Optical Reflection Spectra of Cuinse2 Single Crystals with the Chalcopyrite Structure
3. Photomodulation Optical Spectroscopy of CdHgTe Graded Band Gap Heterostructures
4. Photoluminescence of Arsenic Doped Epitaxial Films of Cd0.3Hg0.7Te
5. Temperature Dependence of the Spectra of Optical Constants of CdTe in the Region of the Absorption Edge
6. Photoluminescence of Hg0.3Cd0.7Te and Hg0.7Cd0.3Te Epitaxial Films
7. In situ Ellipsometric Control of Growth Processes of ZnTe and CdTe Buffer Layers in Technology of Molecular Beam Epitaxy of Mercury Cadmium Telluride
8. Investigation of Characteristics of MIS Structures Based on MBE n-HgCdTe NBνN Barrier Structures by Admittance Spectroscopy
9. Erratum to: Photoluminescence of Arsenic Doped Epitaxial Films of Cd0.3Hg0.7Te
10. II-VI Semiconductor-Based Unipolar Barrier Structures for Infrared Photodetector Arrays
11. Experimental Study of NBνN Barrier Structures Based on MBE n-HgCdTe for MWIR and LWIR Photodetectors
12. Wet Chemical Methods of HgCdTe Surface Treatment
13. Diffusion Limitation of Dark Current in the nBn Structures Based on the MBE HgCdTe
14. Nano-scale structural studies of defects in arsenic-implanted n and p-type HgCdTe films
15. Admittance of barrier nanostructures based on MBE HgCdTe
16. Ellipsometric In Situ Methods of Temperature Control in the Technology of Growing MBE MCT Layers
17. Dark Currents of Unipolar Barrier Structures Based on Mercury Cadmium Telluride for Long-Wave IR Detectors
18. Admittance of MIS Structures Based on nBn Systems of Epitaxial HgCdTe for Detection in the 3–5 μm Spectral Range
19. An Experimental Study of the Dynamic Resistance in Surface Leakage Limited nBn Structures Based on HgCdTe Grown by Molecular Beam Epitaxy
20. Strong interband Faraday rotation in 3D topological insulator Bi2Se3
21. Accumulation of Arsenic Implantation-Induced Donor Defects in Hg0.7Cd0.3Te Heteroepitaxial Structures
22. Influence of As+ Ion Implantation on Properties of MBE HgCdTe Near-Surface Layer Characterized by Metal–Insulator–Semiconductor Techniques
23. Effect of 4-MeV Electron Irradiation on Radiative Recombination of Cu(In,Ga)(S,Se)2 Thin Films in Solar Cells.
24. Temperature Dependence of Optical Reflection Spectra of Cuinse2 Single Crystals with the Chalcopyrite Structure.
25. Structural Characteristics and Photoluminescence of Thin Films of Cu(In1–xgax)(Syse1–y)2 Solid Solutions
26. The Effect of As+ Ion Implantation and Annealing on the Electrical Properties of Near-Surface Layers in Graded-Gap n-Hg0.78Cd0.22Te Films
27. Radiative Recombination at Ion-Induced Defects in Cu(In,Ga)Se2 Alloy Thin Films
28. Investigation of the Temperature Dependence of the Spectra of Optical Constants of Hg1 – xCdхTe Films Grown Using Molecular Beam Epitaxy
29. Rural area infrastructure as a factor in the development of organic farming
30. Optical and Structural Properties of HgCdTe Solid Solutions with a High CdTe Content
31. Parametric Model of the Optical Constant Spectra of Hg1 – xCdxTe and Determination of the Compound Composition
32. Nano-size defect layers in arsenic-implanted and annealed HgCdTe epitaxial films studied with transmission electron microscopy
33. Impedance of MIS Devices Based on nBn Structures from Mercury Cadmium Telluride
34. Spontaneous and Stimulated Emission in Thin Films of Cu(In1 –xGax)(SySe1 –y)2 Solid Solutions in the Сomposition of Solar Cells
35. Molecular Beam Epitaxy of CdHgTe: Current State and Horizons
36. The Effect of the Growth Temperature on the Passivating Properties of the Al2O3 Films Formed by Atomic Layer Deposition on the CdHgTe Surface
37. TEM studies of structural defects in HgTe/HgCdTe quantum wells
38. Optical Studies of Molecular-Beam Epitaxy-Grown Hg1−xCdxTe with x = 0.7–0.8
39. Admittance of Barrier Structures Based on Mercury Cadmium Telluride
40. Localization and Nature of Radiation Donor Defects in the Arsenic Implanted Cdhgte Films Grown by MBE
41. Investigation of the Effect of Thermal Annealing on the Electrical Properties of the Near-Surface Layer of MBE n-HgCdTe Using MIS Techniques
42. HgCdTe-Based 640 × 512 Matrix Midwave Infrared Photodetector
43. Possibilities of Characterizing the Crystal Parameters of CdxHg1 – xTe Structures on GaAs Substrates by the Method of Generation of the Probe-Radiation Second Harmonic in Reflection Geometry
44. Investigation of the Differential Resistance of MIS Structures Based on n-Hg0.78Cd0.22Te with Near-Surface Graded-Gap Layers
45. Photoluminescence of Arsenic Doped Epitaxial Films of Cd0.3Hg0.7Te.
46. Express Characterization of Crystalline Perfection of CdxHg1−xTe Structures by Reflection Second Harmonic Generation of Probing Radiation
47. A Megapixel Matrix Photodetector of the Middle Infrared Range
48. Photodetectors with 384 × 288 Matrix Elements for the Infrared Range of 8–10 Microns
49. An Optical Study of Disordering in Cadmium Mercury Telluride Solid Solutions
50. Excitons in PL Spectra of Cu(In,Ga)Se2 Single Crystals
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